FR2694859B1 - Imageur à infrarouge. - Google Patents

Imageur à infrarouge.

Info

Publication number
FR2694859B1
FR2694859B1 FR9303687A FR9303687A FR2694859B1 FR 2694859 B1 FR2694859 B1 FR 2694859B1 FR 9303687 A FR9303687 A FR 9303687A FR 9303687 A FR9303687 A FR 9303687A FR 2694859 B1 FR2694859 B1 FR 2694859B1
Authority
FR
France
Prior art keywords
infrared imager
imager
infrared
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9303687A
Other languages
English (en)
Other versions
FR2694859A1 (fr
Inventor
Go Sakaino
Yasuaki Yoshida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of FR2694859A1 publication Critical patent/FR2694859A1/fr
Application granted granted Critical
Publication of FR2694859B1 publication Critical patent/FR2694859B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14649—Infrared imagers
    • H01L27/1465—Infrared imagers of the hybrid type
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N3/00—Scanning details of television systems; Combination thereof with generation of supply voltages
    • H04N3/10—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical
    • H04N3/14—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices
    • H04N3/15—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices for picture signal generation
    • H04N3/1575—Picture signal readout register, e.g. shift registers, interline shift registers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
FR9303687A 1992-08-11 1993-03-30 Imageur à infrarouge. Expired - Fee Related FR2694859B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4236555A JPH0661465A (ja) 1992-08-11 1992-08-11 赤外線撮像素子

Publications (2)

Publication Number Publication Date
FR2694859A1 FR2694859A1 (fr) 1994-02-18
FR2694859B1 true FR2694859B1 (fr) 1995-01-06

Family

ID=17002387

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9303687A Expired - Fee Related FR2694859B1 (fr) 1992-08-11 1993-03-30 Imageur à infrarouge.

Country Status (4)

Country Link
US (1) US5304803A (fr)
JP (1) JPH0661465A (fr)
FR (1) FR2694859B1 (fr)
GB (1) GB2270228B (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6034883A (en) * 1998-01-29 2000-03-07 Tinney; Charles E. Solid state director for beams
WO2005096385A1 (fr) * 2004-03-31 2005-10-13 Shimadzu Corporation Élément de formation d’images et dispositif pour élément de formation d’images qui l’utilise
US7551059B2 (en) * 2005-01-06 2009-06-23 Goodrich Corporation Hybrid infrared detector array and CMOS readout integrated circuit with improved dynamic range
US7786440B2 (en) * 2007-09-13 2010-08-31 Honeywell International Inc. Nanowire multispectral imaging array
JP5568880B2 (ja) 2008-04-03 2014-08-13 ソニー株式会社 固体撮像装置、固体撮像装置の駆動方法および電子機器
WO2009133967A2 (fr) 2008-05-02 2009-11-05 Canon Kabushiki Kaisha Appareil d'imagerie à semi-conducteurs
US20100148221A1 (en) * 2008-11-13 2010-06-17 Zena Technologies, Inc. Vertical photogate (vpg) pixel structure with nanowires
US10163948B2 (en) * 2015-07-23 2018-12-25 Semiconductor Energy Laboratory Co., Ltd. Imaging device and electronic device
US9843754B1 (en) * 2016-06-14 2017-12-12 Omnivision Technologies, Inc. Global shutter pixel with hybrid transfer storage gate-storage diode storage node

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1457253A (en) * 1972-12-01 1976-12-01 Mullard Ltd Semiconductor charge transfer devices
FR2326761A1 (fr) * 1975-09-30 1977-04-29 Siemens Ag Memoire d'informations pour la memorisation d'informations sous forme de porteurs de charge electriques et procede pour sa mise en oeuvre
JPS54130852A (en) * 1978-03-31 1979-10-11 Fujitsu Ltd Charge coupled operation device
DE2939490A1 (de) * 1979-09-28 1981-04-16 Siemens AG, 1000 Berlin und 8000 München Monolithisch integrierter zweidimensionaler bildsensor mit einer differenzbildenden stufe
JPS57141960A (en) * 1981-02-26 1982-09-02 Fujitsu Ltd Charge transfer device
US4507684A (en) * 1983-03-07 1985-03-26 Rca Corporation Reducing grain in multi-phase-clocked CCD imagers
FR2558670B1 (fr) * 1984-01-20 1986-11-21 Thomson Csf Perfectionnement aux dispositifs photosensibles a l'etat solide
JPS60183881A (ja) * 1984-03-01 1985-09-19 Mitsubishi Electric Corp 固体撮像素子
US4658277A (en) * 1984-05-17 1987-04-14 Texas Instruments Incorporated Two level charge imaging matrix design with stepped insulator
FR2564674B1 (fr) * 1984-05-18 1986-09-19 Thomson Csf Barrette multilineaire a transfert de charge et procede d'analyse
JPS6242453A (ja) * 1985-08-19 1987-02-24 Fujitsu Ltd 電荷結合装置
JPS6350058A (ja) * 1986-08-19 1988-03-02 Mitsubishi Electric Corp 半導体撮像装置
JP2573582B2 (ja) * 1986-09-05 1997-01-22 日本電気株式会社 固体撮像子の製造方法
NL8700372A (nl) * 1987-02-16 1988-09-16 Optische Ind De Oude Delft Nv Beeldopneeminrichting.
JPS6471770A (en) * 1987-09-14 1989-03-16 Canon Kk Image display unit
JPH02198282A (ja) * 1989-01-26 1990-08-06 Mitsubishi Electric Corp 赤外線撮像素子およびその電荷注入方法

Also Published As

Publication number Publication date
GB2270228B (en) 1996-03-27
GB9305480D0 (en) 1993-05-05
FR2694859A1 (fr) 1994-02-18
US5304803A (en) 1994-04-19
GB2270228A (en) 1994-03-02
JPH0661465A (ja) 1994-03-04

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Legal Events

Date Code Title Description
ST Notification of lapse