FR2683395A1 - Dispositif d'amende de tension sur une piece conductrice. - Google Patents
Dispositif d'amende de tension sur une piece conductrice. Download PDFInfo
- Publication number
- FR2683395A1 FR2683395A1 FR9113686A FR9113686A FR2683395A1 FR 2683395 A1 FR2683395 A1 FR 2683395A1 FR 9113686 A FR9113686 A FR 9113686A FR 9113686 A FR9113686 A FR 9113686A FR 2683395 A1 FR2683395 A1 FR 2683395A1
- Authority
- FR
- France
- Prior art keywords
- conductive
- base
- rod
- connector according
- connector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R13/00—Details of coupling devices of the kinds covered by groups H01R12/70 or H01R24/00 - H01R33/00
- H01R13/02—Contact members
- H01R13/22—Contacts for co-operating by abutting
- H01R13/24—Contacts for co-operating by abutting resilient; resiliently-mounted
- H01R13/2407—Contacts for co-operating by abutting resilient; resiliently-mounted characterized by the resilient means
- H01R13/2421—Contacts for co-operating by abutting resilient; resiliently-mounted characterized by the resilient means using coil springs
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32577—Electrical connecting means
-
- H10P72/72—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/2007—Holding mechanisms
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Multi-Conductor Connections (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR9113686A FR2683395A1 (fr) | 1991-11-06 | 1991-11-06 | Dispositif d'amende de tension sur une piece conductrice. |
| EP92402982A EP0545748B1 (fr) | 1991-11-06 | 1992-11-04 | Dispositif d'amenée de tension sur un porte-substrat |
| DE69217187T DE69217187T2 (de) | 1991-11-06 | 1992-11-04 | Anordnung zur Zuführung einer Spannung auf einen Substrathalter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR9113686A FR2683395A1 (fr) | 1991-11-06 | 1991-11-06 | Dispositif d'amende de tension sur une piece conductrice. |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2683395A1 true FR2683395A1 (fr) | 1993-05-07 |
| FR2683395B1 FR2683395B1 (enExample) | 1995-04-28 |
Family
ID=9418669
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR9113686A Granted FR2683395A1 (fr) | 1991-11-06 | 1991-11-06 | Dispositif d'amende de tension sur une piece conductrice. |
Country Status (3)
| Country | Link |
|---|---|
| EP (1) | EP0545748B1 (enExample) |
| DE (1) | DE69217187T2 (enExample) |
| FR (1) | FR2683395A1 (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0701319A1 (fr) | 1994-09-06 | 1996-03-13 | Commissariat A L'energie Atomique | Porte-substrat électrostatique |
| WO2000030149A1 (en) * | 1998-11-16 | 2000-05-25 | Applied Materials, Inc. | Apparatus for providing rf return current path control in a semiconductor wafer processing system |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11651986B2 (en) * | 2021-01-27 | 2023-05-16 | Applied Materials, Inc. | System for isolating electrodes at cryogenic temperatures |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3012491A1 (de) * | 1980-03-31 | 1981-10-08 | Feinmetall Gmbh, 7033 Herrenberg | Kontaktbaustein |
| EP0121936A2 (en) * | 1983-04-12 | 1984-10-17 | Fuji Photo Film Co., Ltd. | Connection terminal assembly employable for ionic activity detector |
| EP0256541A2 (de) * | 1986-08-19 | 1988-02-24 | Feinmetall Gesellschaft mit beschrÀ¤nkter Haftung | Kontaktiervorrichtung |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4777908A (en) * | 1986-11-26 | 1988-10-18 | Optical Coating Laboratory, Inc. | System and method for vacuum deposition of thin films |
-
1991
- 1991-11-06 FR FR9113686A patent/FR2683395A1/fr active Granted
-
1992
- 1992-11-04 EP EP92402982A patent/EP0545748B1/fr not_active Expired - Lifetime
- 1992-11-04 DE DE69217187T patent/DE69217187T2/de not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3012491A1 (de) * | 1980-03-31 | 1981-10-08 | Feinmetall Gmbh, 7033 Herrenberg | Kontaktbaustein |
| EP0121936A2 (en) * | 1983-04-12 | 1984-10-17 | Fuji Photo Film Co., Ltd. | Connection terminal assembly employable for ionic activity detector |
| EP0256541A2 (de) * | 1986-08-19 | 1988-02-24 | Feinmetall Gesellschaft mit beschrÀ¤nkter Haftung | Kontaktiervorrichtung |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0701319A1 (fr) | 1994-09-06 | 1996-03-13 | Commissariat A L'energie Atomique | Porte-substrat électrostatique |
| WO2000030149A1 (en) * | 1998-11-16 | 2000-05-25 | Applied Materials, Inc. | Apparatus for providing rf return current path control in a semiconductor wafer processing system |
| US6221221B1 (en) | 1998-11-16 | 2001-04-24 | Applied Materials, Inc. | Apparatus for providing RF return current path control in a semiconductor wafer processing system |
Also Published As
| Publication number | Publication date |
|---|---|
| DE69217187T2 (de) | 1997-07-17 |
| DE69217187D1 (de) | 1997-03-13 |
| EP0545748A1 (fr) | 1993-06-09 |
| FR2683395B1 (enExample) | 1995-04-28 |
| EP0545748B1 (fr) | 1997-01-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |