FR2680799B1 - TARGET ELEMENT FOR CATHODE SPRAYING, PROCESS FOR PREPARING SAID ELEMENT, AND TARGETS, ESPECIALLY LARGE AREA, MADE FROM THIS ELEMENT. - Google Patents
TARGET ELEMENT FOR CATHODE SPRAYING, PROCESS FOR PREPARING SAID ELEMENT, AND TARGETS, ESPECIALLY LARGE AREA, MADE FROM THIS ELEMENT.Info
- Publication number
- FR2680799B1 FR2680799B1 FR9110860A FR9110860A FR2680799B1 FR 2680799 B1 FR2680799 B1 FR 2680799B1 FR 9110860 A FR9110860 A FR 9110860A FR 9110860 A FR9110860 A FR 9110860A FR 2680799 B1 FR2680799 B1 FR 2680799B1
- Authority
- FR
- France
- Prior art keywords
- pct
- layer
- assembly
- target
- inorganic compound
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/083—Oxides of refractory metals or yttrium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/4998—Combined manufacture including applying or shaping of fluent material
- Y10T29/49982—Coating
Abstract
PCT No. PCT/FR92/00835 Sec. 371 Date Jun. 14, 1994 Sec. 102(e) Date Jun. 14, 1994 PCT Filed Sep. 1, 1992 PCT Pub. No. WO93/05195 PCT Pub. Date Mar. 11, 1993.The target element (2) is formed from an inorganic compound layer (16) with a melting point above 300 DEG C. deposited on a foam or metallic felt support layer such that the layer of inorganic compound sinks to part of its depth into the support layer to define a composite layer (17). In order to form the target element, a precursor system of the inorganic compound is applied to the support layer, the assembly so formed is subjected to a pressure of between 0.1 MPa and 15 MPa, the resulting assembly is maintained at between 300 DEG C. and 1600 DEG C. and below the melting temperature of the support in order to obtain a sintered assembly. Said assembly is than cooled to an ambient temperature avoiding any sudden cooling. In order to produce the target, the element (2) is glued to a metallic substrate (4) using a conductive adhesive.
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9110860A FR2680799B1 (en) | 1991-09-03 | 1991-09-03 | TARGET ELEMENT FOR CATHODE SPRAYING, PROCESS FOR PREPARING SAID ELEMENT, AND TARGETS, ESPECIALLY LARGE AREA, MADE FROM THIS ELEMENT. |
CA002116776A CA2116776A1 (en) | 1991-09-03 | 1992-09-01 | Target element for cathodic sputtering |
JP5504998A JPH06510090A (en) | 1991-09-03 | 1992-09-01 | Target element for cathode sputtering |
US08/193,024 US5522976A (en) | 1991-09-03 | 1992-09-01 | Target component for cathode sputtering |
EP92919317A EP0602150B1 (en) | 1991-09-03 | 1992-09-01 | Target element for cathode sputtering, manufacturing process thereof, and target for cathode sputtering comprising this element |
DE69215686T DE69215686D1 (en) | 1991-09-03 | 1992-09-01 | Target element for cathode sputtering, process for its production and target for cathode sputtering, which has this element |
PCT/FR1992/000835 WO1993005195A1 (en) | 1991-09-03 | 1992-09-01 | Target element for cathode sputtering |
AT92919317T ATE145944T1 (en) | 1991-09-03 | 1992-09-01 | TARGET FOR CATHODE SPUTTING, METHOD FOR PRODUCING THEREOF, AND TARGET FOR CATHODE SPUTTING COMPRISING SUCH ELEMENT |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9110860A FR2680799B1 (en) | 1991-09-03 | 1991-09-03 | TARGET ELEMENT FOR CATHODE SPRAYING, PROCESS FOR PREPARING SAID ELEMENT, AND TARGETS, ESPECIALLY LARGE AREA, MADE FROM THIS ELEMENT. |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2680799A1 FR2680799A1 (en) | 1993-03-05 |
FR2680799B1 true FR2680799B1 (en) | 1993-10-29 |
Family
ID=9416567
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR9110860A Expired - Fee Related FR2680799B1 (en) | 1991-09-03 | 1991-09-03 | TARGET ELEMENT FOR CATHODE SPRAYING, PROCESS FOR PREPARING SAID ELEMENT, AND TARGETS, ESPECIALLY LARGE AREA, MADE FROM THIS ELEMENT. |
Country Status (8)
Country | Link |
---|---|
US (1) | US5522976A (en) |
EP (1) | EP0602150B1 (en) |
JP (1) | JPH06510090A (en) |
AT (1) | ATE145944T1 (en) |
CA (1) | CA2116776A1 (en) |
DE (1) | DE69215686D1 (en) |
FR (1) | FR2680799B1 (en) |
WO (1) | WO1993005195A1 (en) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AU707146B2 (en) * | 1995-08-31 | 1999-07-01 | Innovative Sputtering Technology | A process for manufacturing ITO alloy articles |
US5955140A (en) * | 1995-11-16 | 1999-09-21 | Texas Instruments Incorporated | Low volatility solvent-based method for forming thin film nanoporous aerogels on semiconductor substrates |
US6380105B1 (en) | 1996-11-14 | 2002-04-30 | Texas Instruments Incorporated | Low volatility solvent-based method for forming thin film nanoporous aerogels on semiconductor substrates |
US6130152A (en) | 1995-11-16 | 2000-10-10 | Texas Instruments Incorporated | Aerogel thin film formation from multi-solvent systems |
US5807607A (en) * | 1995-11-16 | 1998-09-15 | Texas Instruments Incorporated | Polyol-based method for forming thin film aerogels on semiconductor substrates |
US6319852B1 (en) | 1995-11-16 | 2001-11-20 | Texas Instruments Incorporated | Nanoporous dielectric thin film formation using a post-deposition catalyst |
WO1997031739A1 (en) * | 1996-03-03 | 1997-09-04 | Tosoh Smd, Inc. | Method for producing near net shape planar sputtering targets and an intermediate therefor |
US5963778A (en) * | 1997-02-13 | 1999-10-05 | Tosoh Smd, Inc. | Method for producing near net shape planar sputtering targets and an intermediate therefor |
DE19853943B4 (en) * | 1997-11-26 | 2006-04-20 | Vapor Technologies, Inc. (Delaware Corporation), Longmont | Cathode for sputtering or arc vapor deposition as well as apparatus for coating or ion implantation with such a cathode |
US6340415B1 (en) | 1998-01-05 | 2002-01-22 | Applied Materials, Inc. | Method and apparatus for enhancing a sputtering target's lifetime |
JP3735461B2 (en) * | 1998-03-27 | 2006-01-18 | 株式会社シンクロン | Compound metal compound thin film forming method and thin film forming apparatus therefor |
DE19920304A1 (en) * | 1999-05-03 | 2000-11-09 | Leybold Materials Gmbh | Target used for sputtering cathodes of vacuum deposition devices has protrusions extending into the target material |
WO2001062994A1 (en) * | 2000-02-22 | 2001-08-30 | Qinetiq Limited | Method of manufacture for ferro-titanium and other metal alloys electrolytic reduction |
US6706239B2 (en) | 2001-02-05 | 2004-03-16 | Porvair Plc | Method of co-forming metal foam articles and the articles formed by the method thereof |
US20020110700A1 (en) * | 2001-02-12 | 2002-08-15 | Hein Gerald F. | Process for forming decorative films and resulting products |
FR2835534B1 (en) * | 2002-02-06 | 2004-12-24 | Saint Gobain | NON STOECHIOMETRIC CERAMIC TARGET NiOx |
US20070158188A1 (en) * | 2004-06-15 | 2007-07-12 | Ivanov Eugene Y | Metal foam shield for sputter reactor |
US7328831B1 (en) | 2004-06-25 | 2008-02-12 | Porvair Plc | Method of making a brazed metal article and the article formed thereby |
US7372610B2 (en) | 2005-02-23 | 2008-05-13 | Sage Electrochromics, Inc. | Electrochromic devices and methods |
CA2651705C (en) * | 2006-05-18 | 2014-09-30 | Hydro-Quebec | Preparation process for ceramics, ceramics thus obtained and their use as a target for cathode sputtering |
DE102006026005A1 (en) * | 2006-06-01 | 2007-12-06 | W.C. Heraeus Gmbh | Cold pressed sputtering targets |
US8628645B2 (en) * | 2007-09-04 | 2014-01-14 | Front Edge Technology, Inc. | Manufacturing method for thin film battery |
JP5385883B2 (en) * | 2010-10-05 | 2014-01-08 | 株式会社神戸製鋼所 | Target assembly |
US8048707B1 (en) * | 2010-10-19 | 2011-11-01 | Miasole | Sulfur salt containing CIG targets, methods of making and methods of use thereof |
JP6051492B2 (en) | 2011-02-14 | 2016-12-27 | トーソー エスエムディー,インク. | Diffusion bonding sputtering target assembly manufacturing method |
US10043921B1 (en) | 2011-12-21 | 2018-08-07 | Beijing Apollo Ding Rong Solar Technology Co., Ltd. | Photovoltaic cell with high efficiency cigs absorber layer with low minority carrier lifetime and method of making thereof |
JP6376380B2 (en) * | 2014-07-18 | 2018-08-22 | 三菱マテリアル株式会社 | Method for producing lithium nickelate sputtering target |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3791955A (en) * | 1972-12-11 | 1974-02-12 | Gte Laboratories Inc | Preparation of chalcogenide glass sputtering targets |
JPS55165501A (en) * | 1979-06-12 | 1980-12-24 | Matsushita Electric Ind Co Ltd | Method of manufacturing gas diffusion electrode |
DE2933835A1 (en) * | 1979-08-21 | 1981-03-26 | Siemens AG, 1000 Berlin und 8000 München | METHOD FOR FASTENING TARGET MATERIALS PRESENT IN DISK OR PLATE SHAPE ON COOLING PLATE FOR DUST-UP SYSTEMS |
CH646459A5 (en) * | 1982-03-22 | 1984-11-30 | Balzers Hochvakuum | RECTANGULAR TARGET PLATE FOR CATHODE SPRAY PLANTS. |
JPS6078424A (en) * | 1983-10-05 | 1985-05-04 | Matsushita Electric Ind Co Ltd | Optically color developing element |
JPS60221569A (en) * | 1984-04-19 | 1985-11-06 | Koujiyundo Kagaku Kenkyusho:Kk | Target for electrical vapor deposition |
JPS61104073A (en) * | 1984-10-26 | 1986-05-22 | Matsushita Electric Ind Co Ltd | Sputtering gun of sputtering device |
JPS62243762A (en) * | 1986-04-16 | 1987-10-24 | Seiko Epson Corp | Backing plate for sputtering target |
KR900009071B1 (en) * | 1986-05-28 | 1990-12-20 | 가부시기가이샤 히다찌세이사구쇼 | Impregnated cathode |
JPS63195259A (en) * | 1987-02-06 | 1988-08-12 | Sumitomo Electric Ind Ltd | Production of molybdenum disulfide thin film |
JPS63247360A (en) * | 1987-03-31 | 1988-10-14 | Sumitomo Electric Ind Ltd | Sputtering target |
DE68924095T2 (en) * | 1988-05-16 | 1996-04-04 | Tosoh Corp | Method for producing a sputtering target for producing an electrically conductive, transparent layer. |
JPH0243356A (en) * | 1988-08-04 | 1990-02-13 | Tosoh Corp | Production of sputtering target for transparent conductive film |
US5190630A (en) * | 1989-03-01 | 1993-03-02 | Kabushiki Kaisha Toshiba | Sputtering target |
US5086351A (en) * | 1989-07-13 | 1992-02-04 | M&T Chemicals, Inc. | Electrochromic elements, materials for use in such element, processes for making such elements and such materials and use of such element in an electrochromic glass device |
JPH0774436B2 (en) * | 1990-09-20 | 1995-08-09 | 富士通株式会社 | Thin film formation method |
-
1991
- 1991-09-03 FR FR9110860A patent/FR2680799B1/en not_active Expired - Fee Related
-
1992
- 1992-09-01 DE DE69215686T patent/DE69215686D1/en not_active Expired - Lifetime
- 1992-09-01 WO PCT/FR1992/000835 patent/WO1993005195A1/en active IP Right Grant
- 1992-09-01 US US08/193,024 patent/US5522976A/en not_active Expired - Fee Related
- 1992-09-01 AT AT92919317T patent/ATE145944T1/en not_active IP Right Cessation
- 1992-09-01 JP JP5504998A patent/JPH06510090A/en active Pending
- 1992-09-01 CA CA002116776A patent/CA2116776A1/en not_active Abandoned
- 1992-09-01 EP EP92919317A patent/EP0602150B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
FR2680799A1 (en) | 1993-03-05 |
US5522976A (en) | 1996-06-04 |
JPH06510090A (en) | 1994-11-10 |
EP0602150A1 (en) | 1994-06-22 |
ATE145944T1 (en) | 1996-12-15 |
CA2116776A1 (en) | 1993-03-18 |
WO1993005195A1 (en) | 1993-03-18 |
EP0602150B1 (en) | 1996-12-04 |
DE69215686D1 (en) | 1997-01-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |