FR2675306B1 - Structure de cathode froide a film mince et dispositif utilisant cette cathode. - Google Patents
Structure de cathode froide a film mince et dispositif utilisant cette cathode.Info
- Publication number
- FR2675306B1 FR2675306B1 FR9114186A FR9114186A FR2675306B1 FR 2675306 B1 FR2675306 B1 FR 2675306B1 FR 9114186 A FR9114186 A FR 9114186A FR 9114186 A FR9114186 A FR 9114186A FR 2675306 B1 FR2675306 B1 FR 2675306B1
- Authority
- FR
- France
- Prior art keywords
- thin film
- same
- cold cathode
- cathode structure
- film cold
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000010409 thin film Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/312—Cold cathodes, e.g. field-emissive cathode having an electric field perpendicular to the surface, e.g. tunnel-effect cathodes of metal-insulator-metal [MIM] type
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Cold Cathode And The Manufacture (AREA)
- Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7780791A JP3126158B2 (ja) | 1991-04-10 | 1991-04-10 | 薄膜冷陰極 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2675306A1 FR2675306A1 (fr) | 1992-10-16 |
FR2675306B1 true FR2675306B1 (fr) | 2000-12-15 |
Family
ID=13644292
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR9114186A Expired - Fee Related FR2675306B1 (fr) | 1991-04-10 | 1991-11-18 | Structure de cathode froide a film mince et dispositif utilisant cette cathode. |
Country Status (3)
Country | Link |
---|---|
US (1) | US5280221A (fr) |
JP (1) | JP3126158B2 (fr) |
FR (1) | FR2675306B1 (fr) |
Families Citing this family (42)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06160850A (ja) * | 1992-11-26 | 1994-06-07 | Sharp Corp | 液晶表示装置 |
US5647998A (en) * | 1995-06-13 | 1997-07-15 | Advanced Vision Technologies, Inc. | Fabrication process for laminar composite lateral field-emission cathode |
US5703380A (en) * | 1995-06-13 | 1997-12-30 | Advanced Vision Technologies Inc. | Laminar composite lateral field-emission cathode |
JPH0990882A (ja) * | 1995-09-20 | 1997-04-04 | Komatsu Ltd | 発光表示素子 |
US5831384A (en) * | 1995-10-30 | 1998-11-03 | Advanced Vision Technologies, Inc. | Dual carrier display device |
AU7480796A (en) * | 1995-10-30 | 1997-05-22 | Advanced Vision Technologies, Inc. | Dual carrier display device and fabrication process |
JP3585677B2 (ja) * | 1996-11-28 | 2004-11-04 | 杉原 慎一 | 絶縁体内電子放出電極 |
JP2950274B2 (ja) * | 1997-01-28 | 1999-09-20 | 日本電気株式会社 | 電界放出型冷陰極素子の駆動方法及び電界放出型冷陰極電子銃 |
JPH1167065A (ja) * | 1997-08-08 | 1999-03-09 | Pioneer Electron Corp | 電子放出素子及びこれを用いた表示装置 |
HUP0103631A3 (en) | 1998-06-11 | 2004-07-28 | Kolarik Vladimir | Planar electron emitter (pee) |
JP2001028258A (ja) * | 1999-05-12 | 2001-01-30 | Nippon Sheet Glass Co Ltd | 平面蛍光ランプ |
US6936972B2 (en) | 2000-12-22 | 2005-08-30 | Ngk Insulators, Ltd. | Electron-emitting element and field emission display using the same |
JP3699451B2 (ja) * | 2000-12-22 | 2005-09-28 | 日本碍子株式会社 | 電子放出素子及びそれを用いたフィールドエミッションディスプレイ |
WO2003073458A1 (fr) | 2002-02-26 | 2003-09-04 | Ngk Insulators, Ltd. | Dispositif d'emission d'electrons, procede d'activation d'un dispositif d'emission d'electrons, afficheur et procede d'activation d'un afficheur |
US6897620B1 (en) | 2002-06-24 | 2005-05-24 | Ngk Insulators, Ltd. | Electron emitter, drive circuit of electron emitter and method of driving electron emitter |
JP3822551B2 (ja) * | 2002-09-30 | 2006-09-20 | 日本碍子株式会社 | 発光素子及びそれを具えるフィールドエミッションディスプレイ |
US7067970B2 (en) | 2002-09-30 | 2006-06-27 | Ngk Insulators, Ltd. | Light emitting device |
JP2004146364A (ja) * | 2002-09-30 | 2004-05-20 | Ngk Insulators Ltd | 発光素子及びそれを具えるフィールドエミッションディスプレイ |
JP2004172087A (ja) * | 2002-11-05 | 2004-06-17 | Ngk Insulators Ltd | ディスプレイ |
JP3829128B2 (ja) * | 2002-11-29 | 2006-10-04 | 日本碍子株式会社 | 電子放出素子 |
US7129642B2 (en) | 2002-11-29 | 2006-10-31 | Ngk Insulators, Ltd. | Electron emitting method of electron emitter |
US7187114B2 (en) | 2002-11-29 | 2007-03-06 | Ngk Insulators, Ltd. | Electron emitter comprising emitter section made of dielectric material |
US6975074B2 (en) | 2002-11-29 | 2005-12-13 | Ngk Insulators, Ltd. | Electron emitter comprising emitter section made of dielectric material |
JP3839792B2 (ja) * | 2002-11-29 | 2006-11-01 | 日本碍子株式会社 | 電子放出素子の電子放出方法 |
JP3869819B2 (ja) * | 2002-11-29 | 2007-01-17 | 日本碍子株式会社 | 電子放出素子 |
JP2004228065A (ja) | 2002-11-29 | 2004-08-12 | Ngk Insulators Ltd | 電子パルス放出装置 |
JP3867065B2 (ja) * | 2002-11-29 | 2007-01-10 | 日本碍子株式会社 | 電子放出素子及び発光素子 |
US7379037B2 (en) | 2003-03-26 | 2008-05-27 | Ngk Insulators, Ltd. | Display apparatus, method of driving display apparatus, electron emitter, method of driving electron emitter, apparatus for driving electron emitter, electron emission apparatus, and method of driving electron emission apparatus |
US7176609B2 (en) | 2003-10-03 | 2007-02-13 | Ngk Insulators, Ltd. | High emission low voltage electron emitter |
US20040189548A1 (en) * | 2003-03-26 | 2004-09-30 | Ngk Insulators, Ltd. | Circuit element, signal processing circuit, control device, display device, method of driving display device, method of driving circuit element, and method of driving control device |
US6891176B2 (en) * | 2003-06-20 | 2005-05-10 | Nanion Aps | Planar electron emitter with extended lifetime and system using same |
US7474060B2 (en) | 2003-08-22 | 2009-01-06 | Ngk Insulators, Ltd. | Light source |
JP2005070349A (ja) * | 2003-08-22 | 2005-03-17 | Ngk Insulators Ltd | ディスプレイ及びその駆動方法 |
US7336026B2 (en) | 2003-10-03 | 2008-02-26 | Ngk Insulators, Ltd. | High efficiency dielectric electron emitter |
US20050073234A1 (en) * | 2003-10-03 | 2005-04-07 | Ngk Insulators, Ltd. | Electron emitter |
JP2005116232A (ja) | 2003-10-03 | 2005-04-28 | Ngk Insulators Ltd | 電子放出素子及びその製造方法 |
JP2005183361A (ja) * | 2003-10-03 | 2005-07-07 | Ngk Insulators Ltd | 電子放出素子、電子放出装置、ディスプレイ及び光源 |
US20050116603A1 (en) * | 2003-10-03 | 2005-06-02 | Ngk Insulators, Ltd. | Electron emitter |
US7719201B2 (en) | 2003-10-03 | 2010-05-18 | Ngk Insulators, Ltd. | Microdevice, microdevice array, amplifying circuit, memory device, analog switch, and current control unit |
US7528539B2 (en) * | 2004-06-08 | 2009-05-05 | Ngk Insulators, Ltd. | Electron emitter and method of fabricating electron emitter |
JP4749065B2 (ja) * | 2004-08-25 | 2011-08-17 | 日本碍子株式会社 | 電子放出素子 |
EA025124B1 (ru) | 2010-01-08 | 2016-11-30 | Трай Альфа Энерджи, Инк. | Преобразование высокоэнергетичных фотонов в электричество |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3445281A (en) * | 1964-06-22 | 1969-05-20 | Little Inc A | Thin-film cold cathode |
US3334248A (en) * | 1965-02-02 | 1967-08-01 | Texas Instruments Inc | Space charge barrier hot electron cathode |
US3735186A (en) * | 1971-03-10 | 1973-05-22 | Philips Corp | Field emission cathode |
NL8600675A (nl) * | 1986-03-17 | 1987-10-16 | Philips Nv | Halfgeleiderinrichting voor het opwekken van een elektronenstroom. |
US5066883A (en) * | 1987-07-15 | 1991-11-19 | Canon Kabushiki Kaisha | Electron-emitting device with electron-emitting region insulated from electrodes |
FR2634060B1 (fr) * | 1988-07-05 | 1996-02-09 | Thomson Csf | Structure de source d'electrons et application aux tubes d'emission d'ondes electromagnetiques |
JP3044382B2 (ja) * | 1989-03-30 | 2000-05-22 | キヤノン株式会社 | 電子源及びそれを用いた画像表示装置 |
-
1991
- 1991-04-10 JP JP7780791A patent/JP3126158B2/ja not_active Expired - Fee Related
- 1991-11-18 FR FR9114186A patent/FR2675306B1/fr not_active Expired - Fee Related
- 1991-11-20 US US07/795,125 patent/US5280221A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH04312738A (ja) | 1992-11-04 |
FR2675306A1 (fr) | 1992-10-16 |
US5280221A (en) | 1994-01-18 |
JP3126158B2 (ja) | 2001-01-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ER | Errata listed in the french official journal (bopi) |
Free format text: 42/92 |
|
ST | Notification of lapse |