FR2673767B1 - Dispositif photodetecteur comportant une electrode transparente de faible resistance electrique. - Google Patents
Dispositif photodetecteur comportant une electrode transparente de faible resistance electrique.Info
- Publication number
- FR2673767B1 FR2673767B1 FR9102733A FR9102733A FR2673767B1 FR 2673767 B1 FR2673767 B1 FR 2673767B1 FR 9102733 A FR9102733 A FR 9102733A FR 9102733 A FR9102733 A FR 9102733A FR 2673767 B1 FR2673767 B1 FR 2673767B1
- Authority
- FR
- France
- Prior art keywords
- transparent electrode
- electric resistance
- low electric
- photodetector device
- photodetector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03044—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds comprising a nitride compounds, e.g. GaN
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Light Receiving Elements (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9102733A FR2673767B1 (fr) | 1991-03-07 | 1991-03-07 | Dispositif photodetecteur comportant une electrode transparente de faible resistance electrique. |
JP92506908A JPH05506546A (ja) | 1991-03-07 | 1992-03-05 | 低い電気抵抗の透明電極を有する光検出装置 |
PCT/FR1992/000204 WO1992016022A1 (fr) | 1991-03-07 | 1992-03-05 | Dispositif photodetecteur comportant une electrode transparente de faible resistance electrique |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9102733A FR2673767B1 (fr) | 1991-03-07 | 1991-03-07 | Dispositif photodetecteur comportant une electrode transparente de faible resistance electrique. |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2673767A1 FR2673767A1 (fr) | 1992-09-11 |
FR2673767B1 true FR2673767B1 (fr) | 1993-07-09 |
Family
ID=9410448
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR9102733A Expired - Fee Related FR2673767B1 (fr) | 1991-03-07 | 1991-03-07 | Dispositif photodetecteur comportant une electrode transparente de faible resistance electrique. |
Country Status (3)
Country | Link |
---|---|
JP (1) | JPH05506546A (fr) |
FR (1) | FR2673767B1 (fr) |
WO (1) | WO1992016022A1 (fr) |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57106086A (en) * | 1980-12-23 | 1982-07-01 | Tdk Corp | Solar cell and manufacture thereof |
JPS6488432A (en) * | 1987-09-29 | 1989-04-03 | Seiko Epson Corp | Transparent electrode substrate with superconducting thin film |
JPH01109695A (ja) * | 1987-10-21 | 1989-04-26 | Matsushita Electric Ind Co Ltd | 自己発光型表示装置 |
JPH01137595A (ja) * | 1987-11-24 | 1989-05-30 | Matsushita Electric Ind Co Ltd | Elディスプレイ装置 |
FR2626569A1 (fr) * | 1988-01-29 | 1989-08-04 | Centre Nat Rech Scient | Nouveau materiau composite, comportant une phase de type perovskite et une phase nitrure, procede de fabrication et ensembles electriques en contenant |
JPH01239886A (ja) * | 1988-03-20 | 1989-09-25 | Fujitsu Ltd | 超電導受光素子 |
-
1991
- 1991-03-07 FR FR9102733A patent/FR2673767B1/fr not_active Expired - Fee Related
-
1992
- 1992-03-05 WO PCT/FR1992/000204 patent/WO1992016022A1/fr unknown
- 1992-03-05 JP JP92506908A patent/JPH05506546A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
FR2673767A1 (fr) | 1992-09-11 |
JPH05506546A (ja) | 1993-09-22 |
WO1992016022A1 (fr) | 1992-09-17 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |