FR2669477A1 - Circuit de commande de commutation basse frequence de transistors a effet de champ et de transistors bipolaires a grille isolee. - Google Patents

Circuit de commande de commutation basse frequence de transistors a effet de champ et de transistors bipolaires a grille isolee. Download PDF

Info

Publication number
FR2669477A1
FR2669477A1 FR9014323A FR9014323A FR2669477A1 FR 2669477 A1 FR2669477 A1 FR 2669477A1 FR 9014323 A FR9014323 A FR 9014323A FR 9014323 A FR9014323 A FR 9014323A FR 2669477 A1 FR2669477 A1 FR 2669477A1
Authority
FR
France
Prior art keywords
transistor
pulse
diode
gate
positive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR9014323A
Other languages
English (en)
French (fr)
Other versions
FR2669477B1 (en:Method
Inventor
Laeuffer Jacques
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric CGR SA
Original Assignee
General Electric CGR SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric CGR SA filed Critical General Electric CGR SA
Priority to FR9014323A priority Critical patent/FR2669477A1/fr
Priority to EP19910402982 priority patent/EP0486359B1/fr
Priority to DE1991629179 priority patent/DE69129179T2/de
Publication of FR2669477A1 publication Critical patent/FR2669477A1/fr
Application granted granted Critical
Publication of FR2669477B1 publication Critical patent/FR2669477B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/689—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit
    • H03K17/691—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit using transformer coupling

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • X-Ray Techniques (AREA)
  • Electronic Switches (AREA)
FR9014323A 1990-11-16 1990-11-16 Circuit de commande de commutation basse frequence de transistors a effet de champ et de transistors bipolaires a grille isolee. Granted FR2669477A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR9014323A FR2669477A1 (fr) 1990-11-16 1990-11-16 Circuit de commande de commutation basse frequence de transistors a effet de champ et de transistors bipolaires a grille isolee.
EP19910402982 EP0486359B1 (fr) 1990-11-16 1991-11-07 Circuit de commande de commutation basse fréquence de transistors à effet de champ et de transistors bipolaires à grille isolée
DE1991629179 DE69129179T2 (de) 1990-11-16 1991-11-07 NF-Schaltsteuerschaltung für Feldeffekttransistoren und Bipolartransistoren mit isoliertem Gate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9014323A FR2669477A1 (fr) 1990-11-16 1990-11-16 Circuit de commande de commutation basse frequence de transistors a effet de champ et de transistors bipolaires a grille isolee.

Publications (2)

Publication Number Publication Date
FR2669477A1 true FR2669477A1 (fr) 1992-05-22
FR2669477B1 FR2669477B1 (en:Method) 1997-03-07

Family

ID=9402300

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9014323A Granted FR2669477A1 (fr) 1990-11-16 1990-11-16 Circuit de commande de commutation basse frequence de transistors a effet de champ et de transistors bipolaires a grille isolee.

Country Status (3)

Country Link
EP (1) EP0486359B1 (en:Method)
DE (1) DE69129179T2 (en:Method)
FR (1) FR2669477A1 (en:Method)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2684500B1 (fr) * 1991-12-02 1994-06-10 Rahban Thierry Generateur bipolaire a isolation galvanique de polarite commutable.
FR2693604B1 (fr) * 1992-07-10 1994-10-07 Sgs Thomson Microelectronics Convertisseur commandé par impulsions et commande électrique de moteur.
FI97176C (fi) * 1994-09-27 1996-10-25 Abb Industry Oy Puolijohdekytkimen ohjauspiiri
EP0757512B1 (en) * 1995-07-31 2001-11-14 STMicroelectronics S.r.l. Driving circuit, MOS transistor using the same and corresponding applications
JP4317825B2 (ja) 2005-02-25 2009-08-19 三菱重工業株式会社 インバータ装置
DE102010028817A1 (de) * 2010-05-10 2011-11-10 Semikron Elektronik Gmbh & Co. Kg Verfahren zur Übertragung eines binären Signals über eine Übertragerstrecke

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH635828A5 (de) * 1978-08-30 1983-04-29 Ciba Geigy Ag N-substituierte imide und bisimide.
GB2109184A (en) * 1981-10-22 1983-05-25 Ferranti Ltd Controlling conduction of semiconductor device
JPH01114115A (ja) * 1987-10-27 1989-05-02 Yaskawa Electric Mfg Co Ltd 電圧駆動形パワー素子のドライブ回路

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH653828A5 (en) * 1983-09-30 1986-01-15 Bbc Brown Boveri & Cie Pulse transmission circuit for transmission of electrical pulses with potential separation

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH635828A5 (de) * 1978-08-30 1983-04-29 Ciba Geigy Ag N-substituierte imide und bisimide.
GB2109184A (en) * 1981-10-22 1983-05-25 Ferranti Ltd Controlling conduction of semiconductor device
JPH01114115A (ja) * 1987-10-27 1989-05-02 Yaskawa Electric Mfg Co Ltd 電圧駆動形パワー素子のドライブ回路

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN, vol. 13, no. 354 (E-802)[3702], 8 août 1989; & JP-A-1 114 115 (YASKAWA ELECTRIC MFG CO., LTD) 02-05-1989 *
TECHNISCHE RUNDSCHAU, vol. 80, no. 34, août 1988, pages 66-70, Bern, CH; J. PALAND et al.: "Neue abschaltbare Leistungshalbleiter" *

Also Published As

Publication number Publication date
EP0486359A1 (fr) 1992-05-20
FR2669477B1 (en:Method) 1997-03-07
DE69129179D1 (de) 1998-05-07
EP0486359B1 (fr) 1998-04-01
DE69129179T2 (de) 1998-07-30

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Effective date: 20090731