FR2657196B1 - Monture intermediaire de dispositif laser a semi-conducteur. - Google Patents

Monture intermediaire de dispositif laser a semi-conducteur.

Info

Publication number
FR2657196B1
FR2657196B1 FR9008614A FR9008614A FR2657196B1 FR 2657196 B1 FR2657196 B1 FR 2657196B1 FR 9008614 A FR9008614 A FR 9008614A FR 9008614 A FR9008614 A FR 9008614A FR 2657196 B1 FR2657196 B1 FR 2657196B1
Authority
FR
France
Prior art keywords
semiconductor laser
laser device
intermediate mount
mount
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9008614A
Other languages
English (en)
Other versions
FR2657196A1 (fr
Inventor
Mitsuo Ishii
Hidenori Nishihra
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of FR2657196A1 publication Critical patent/FR2657196A1/fr
Application granted granted Critical
Publication of FR2657196B1 publication Critical patent/FR2657196B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3738—Semiconductor materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/492—Bases or plates or solder therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
    • H01L2224/83805—Soldering or alloying involving forming a eutectic alloy at the bonding interface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2924/01029—Copper [Cu]
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    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
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    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01049—Indium [In]
    • H—ELECTRICITY
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    • H01L2924/01—Chemical elements
    • H01L2924/0105—Tin [Sn]
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    • H01L2924/01051—Antimony [Sb]
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    • H01L2924/01058—Cerium [Ce]
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    • H01L2924/01074—Tungsten [W]
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    • H01L2924/01078—Platinum [Pt]
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01094—Plutonium [Pu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0133—Ternary Alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19043—Component type being a resistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Semiconductor Lasers (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
FR9008614A 1990-01-12 1990-07-06 Monture intermediaire de dispositif laser a semi-conducteur. Expired - Fee Related FR2657196B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005176A JPH03209896A (ja) 1990-01-12 1990-01-12 半導体レーザ素子用サブマウント

Publications (2)

Publication Number Publication Date
FR2657196A1 FR2657196A1 (fr) 1991-07-19
FR2657196B1 true FR2657196B1 (fr) 1994-03-25

Family

ID=11603928

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9008614A Expired - Fee Related FR2657196B1 (fr) 1990-01-12 1990-07-06 Monture intermediaire de dispositif laser a semi-conducteur.

Country Status (4)

Country Link
US (1) US5016083A (fr)
JP (1) JPH03209896A (fr)
DE (1) DE4025163C2 (fr)
FR (1) FR2657196B1 (fr)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9014491D0 (en) * 1990-06-29 1990-08-22 Digital Equipment Int Mounting silicon chips
JP2869279B2 (ja) * 1992-09-16 1999-03-10 三菱電機株式会社 半導体レーザダイオード及びその製造方法並びに半導体レーザダイオードアレイ
FR2736764B1 (fr) * 1995-07-13 1997-08-08 Thomson Csf Source laser a semiconducteurs
DE19536463C2 (de) * 1995-09-29 2002-02-07 Infineon Technologies Ag Verfahren zum Herstellen einer Mehrzahl von Laserdiodenbauelementen
DE19611046A1 (de) * 1996-03-20 1997-09-25 Siemens Ag Halbleitervorrichtung
US5637521A (en) * 1996-06-14 1997-06-10 The United States Of America As Represented By The Secretary Of The Army Method of fabricating an air-filled waveguide on a semiconductor body
US5812571A (en) * 1996-10-25 1998-09-22 W. L. Gore & Associates, Inc. High-power vertical cavity surface emitting laser cluster
JP3339369B2 (ja) * 1997-05-30 2002-10-28 株式会社デンソー レーザダイオード
DE10033502A1 (de) 2000-07-10 2002-01-31 Osram Opto Semiconductors Gmbh Optoelektronisches Modul, Verfahren zu dessen Herstellung und dessen Verwendung
GB0124220D0 (en) * 2001-10-09 2001-11-28 Denselight Semiconductors Pte Thermal circuit
DE102004015446B4 (de) * 2003-12-30 2010-08-05 Osram Opto Semiconductors Gmbh Wärmesenke für ein diskretes Halbleiterbauelement und Verfahren zu dessen Herstellung sowie elektronische Komponente
US20150168737A1 (en) * 2013-12-12 2015-06-18 Hisense Broadband Multimedia Technologies Co., Ltd. Laser Apparatus
JP6409690B2 (ja) * 2014-11-20 2018-10-24 株式会社デンソー 冷却モジュール
JP6652856B2 (ja) * 2016-02-25 2020-02-26 株式会社フジクラ 半導体レーザモジュール及びその製造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5432972A (en) * 1977-08-19 1979-03-10 Fujitsu Ltd Fusion-welding method for semiconductor chip
JPS5837713B2 (ja) * 1978-12-01 1983-08-18 富士通株式会社 半導体レ−ザ−装置の製造方法
JPS56110286A (en) * 1980-02-05 1981-09-01 Matsushita Electric Ind Co Ltd Semiconductor laser device
JPS5842285A (ja) * 1981-09-07 1983-03-11 Mitsubishi Electric Corp 半導体レ−ザ装置の製造方法
JPS5852892A (ja) * 1981-09-25 1983-03-29 Hitachi Ltd 化合物半導体素子の取付構造
JPS5858786A (ja) * 1981-10-05 1983-04-07 Hitachi Ltd 化合物半導体素子の取付構造
JPS5891692A (ja) * 1981-11-27 1983-05-31 Hitachi Ltd 半導体レ−ザ装置
GB2137131B (en) * 1983-03-15 1986-06-25 Standard Telephones Cables Ltd Bonding semiconductive bodies
JPS6052079A (ja) * 1983-09-01 1985-03-23 Matsushita Electric Ind Co Ltd 半導体レ−ザ装置
JPS60103860A (ja) * 1983-11-11 1985-06-08 Matsushita Electric Ind Co Ltd テレビ電話
JPS6210461A (ja) * 1985-07-08 1987-01-19 Toyota Motor Corp 内燃機関の空燃比制御装置
JPH0750813B2 (ja) * 1988-05-23 1995-05-31 三菱電機株式会社 半導体レーザ素子用サブマウント

Also Published As

Publication number Publication date
JPH03209896A (ja) 1991-09-12
FR2657196A1 (fr) 1991-07-19
DE4025163C2 (de) 1995-04-20
US5016083A (en) 1991-05-14
DE4025163A1 (de) 1991-07-18

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ST Notification of lapse

Effective date: 20060331