FR2656193A1 - Procede de montage d'un pave semi-conducteur sur un support de dissipation thermique et de connexion electrique. - Google Patents

Procede de montage d'un pave semi-conducteur sur un support de dissipation thermique et de connexion electrique. Download PDF

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Publication number
FR2656193A1
FR2656193A1 FR8617808A FR8617808A FR2656193A1 FR 2656193 A1 FR2656193 A1 FR 2656193A1 FR 8617808 A FR8617808 A FR 8617808A FR 8617808 A FR8617808 A FR 8617808A FR 2656193 A1 FR2656193 A1 FR 2656193A1
Authority
FR
France
Prior art keywords
block
assembly
support
metallized
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR8617808A
Other languages
English (en)
French (fr)
Other versions
FR2656193B1 (enExample
Inventor
Picault Robert
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Societe Anonyme de Telecommunications SAT
Original Assignee
Societe Anonyme de Telecommunications SAT
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Societe Anonyme de Telecommunications SAT filed Critical Societe Anonyme de Telecommunications SAT
Priority to FR8617808A priority Critical patent/FR2656193A1/fr
Publication of FR2656193A1 publication Critical patent/FR2656193A1/fr
Application granted granted Critical
Publication of FR2656193B1 publication Critical patent/FR2656193B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/60—Arrangements for cooling, heating, ventilating or compensating for temperature fluctuations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0365—Manufacture or treatment of packages of means for heat extraction or cooling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/0711—Apparatus therefor
    • H10W72/07141—Means for applying energy, e.g. ovens or lasers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07531—Techniques
    • H10W72/07532—Compression bonding, e.g. thermocompression bonding
    • H10W72/07533—Ultrasonic bonding, e.g. thermosonic bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5434—Dispositions of bond wires the connected ends being on auxiliary connecting means on bond pads, e.g. on other bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu

Landscapes

  • Semiconductor Lasers (AREA)
FR8617808A 1986-12-19 1986-12-19 Procede de montage d'un pave semi-conducteur sur un support de dissipation thermique et de connexion electrique. Granted FR2656193A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR8617808A FR2656193A1 (fr) 1986-12-19 1986-12-19 Procede de montage d'un pave semi-conducteur sur un support de dissipation thermique et de connexion electrique.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8617808A FR2656193A1 (fr) 1986-12-19 1986-12-19 Procede de montage d'un pave semi-conducteur sur un support de dissipation thermique et de connexion electrique.

Publications (2)

Publication Number Publication Date
FR2656193A1 true FR2656193A1 (fr) 1991-06-21
FR2656193B1 FR2656193B1 (enExample) 1995-05-24

Family

ID=9342089

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8617808A Granted FR2656193A1 (fr) 1986-12-19 1986-12-19 Procede de montage d'un pave semi-conducteur sur un support de dissipation thermique et de connexion electrique.

Country Status (1)

Country Link
FR (1) FR2656193A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999023697A1 (de) * 1997-10-30 1999-05-14 Daimlerchrysler Ag Bauelement und verfahren zum herstellen des bauelements

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3986251A (en) * 1974-10-03 1976-10-19 Motorola, Inc. Germanium doped light emitting diode bonding process
FR2379165A1 (fr) * 1977-01-28 1978-08-25 Motorola Inc Procede de fabrication de semi-conducteurs
DE2714483A1 (de) * 1975-09-15 1978-10-12 Siemens Ag Verfahren zur teilautomatisierten kontaktierung von halbleitersystemen
EP0007873A1 (fr) * 1978-07-25 1980-02-06 Thomson-Csf Système de soudure d'un composant semiconducteur émetteur de lumière sur un socle métallique
JPS58121633A (ja) * 1982-01-12 1983-07-20 Mitsubishi Electric Corp 半導体装置
DE3231732A1 (de) * 1982-08-26 1984-03-01 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Elektrischer kontakt
EP0106598A2 (en) * 1982-10-08 1984-04-25 Western Electric Company, Incorporated Fluxless bonding of microelectronic chips

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3986251A (en) * 1974-10-03 1976-10-19 Motorola, Inc. Germanium doped light emitting diode bonding process
DE2714483A1 (de) * 1975-09-15 1978-10-12 Siemens Ag Verfahren zur teilautomatisierten kontaktierung von halbleitersystemen
FR2379165A1 (fr) * 1977-01-28 1978-08-25 Motorola Inc Procede de fabrication de semi-conducteurs
EP0007873A1 (fr) * 1978-07-25 1980-02-06 Thomson-Csf Système de soudure d'un composant semiconducteur émetteur de lumière sur un socle métallique
JPS58121633A (ja) * 1982-01-12 1983-07-20 Mitsubishi Electric Corp 半導体装置
DE3231732A1 (de) * 1982-08-26 1984-03-01 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Elektrischer kontakt
EP0106598A2 (en) * 1982-10-08 1984-04-25 Western Electric Company, Incorporated Fluxless bonding of microelectronic chips

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN, vol. 7, no. 233 (E-204)[1378], 15 octobre 1983; & JP-A-58 121 633 (MITSUBISHI) 20-07-1983 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999023697A1 (de) * 1997-10-30 1999-05-14 Daimlerchrysler Ag Bauelement und verfahren zum herstellen des bauelements
US6334567B1 (en) 1997-10-30 2002-01-01 Daimlerchrysler Ag Component and method for production thereof

Also Published As

Publication number Publication date
FR2656193B1 (enExample) 1995-05-24

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