FR2656104B1 - Circuit de detection de seuil de tension d'alimentation vcc a faible dependance de la temperature et des variations des parametres technologiques. - Google Patents

Circuit de detection de seuil de tension d'alimentation vcc a faible dependance de la temperature et des variations des parametres technologiques.

Info

Publication number
FR2656104B1
FR2656104B1 FR8916650A FR8916650A FR2656104B1 FR 2656104 B1 FR2656104 B1 FR 2656104B1 FR 8916650 A FR8916650 A FR 8916650A FR 8916650 A FR8916650 A FR 8916650A FR 2656104 B1 FR2656104 B1 FR 2656104B1
Authority
FR
France
Prior art keywords
variation
power supply
supply voltage
low temperature
voltage threshold
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR8916650A
Other languages
English (en)
Other versions
FR2656104A1 (fr
Inventor
Wuidart Sylvie
Lisart Mathieu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
SGS Thomson Microelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGS Thomson Microelectronics SA filed Critical SGS Thomson Microelectronics SA
Priority to FR8916650A priority Critical patent/FR2656104B1/fr
Publication of FR2656104A1 publication Critical patent/FR2656104A1/fr
Application granted granted Critical
Publication of FR2656104B1 publication Critical patent/FR2656104B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/165—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values
    • G01R19/16504—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values characterised by the components employed
    • G01R19/16519—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values characterised by the components employed using FET's
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/245—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the temperature

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Measurement Of Current Or Voltage (AREA)
  • Electronic Switches (AREA)
FR8916650A 1989-12-15 1989-12-15 Circuit de detection de seuil de tension d'alimentation vcc a faible dependance de la temperature et des variations des parametres technologiques. Expired - Lifetime FR2656104B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR8916650A FR2656104B1 (fr) 1989-12-15 1989-12-15 Circuit de detection de seuil de tension d'alimentation vcc a faible dependance de la temperature et des variations des parametres technologiques.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8916650A FR2656104B1 (fr) 1989-12-15 1989-12-15 Circuit de detection de seuil de tension d'alimentation vcc a faible dependance de la temperature et des variations des parametres technologiques.

Publications (2)

Publication Number Publication Date
FR2656104A1 FR2656104A1 (fr) 1991-06-21
FR2656104B1 true FR2656104B1 (fr) 1992-09-11

Family

ID=9388580

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8916650A Expired - Lifetime FR2656104B1 (fr) 1989-12-15 1989-12-15 Circuit de detection de seuil de tension d'alimentation vcc a faible dependance de la temperature et des variations des parametres technologiques.

Country Status (1)

Country Link
FR (1) FR2656104B1 (fr)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6085622A (ja) * 1983-10-17 1985-05-15 Hitachi Ltd Ｍｏｓ集積回路装置
FR2613491B1 (fr) * 1987-04-03 1989-07-21 Thomson Csf Dispositif de detection du niveau haut d'une tension en technologie mos
JPS6422107A (en) * 1987-07-17 1989-01-25 Oki Electric Ind Co Ltd Voltage level detecting circuit
FR2625633B1 (fr) * 1987-12-30 1990-05-04 Sgs Thomson Microelectronics Circuit de remise sous tension pour circuit integre en technologie mos

Also Published As

Publication number Publication date
FR2656104A1 (fr) 1991-06-21

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Legal Events

Date Code Title Description
D6 Patent endorsed licences of rights
ST Notification of lapse