FR2651375B1 - - Google Patents
Info
- Publication number
- FR2651375B1 FR2651375B1 FR9010898A FR9010898A FR2651375B1 FR 2651375 B1 FR2651375 B1 FR 2651375B1 FR 9010898 A FR9010898 A FR 9010898A FR 9010898 A FR9010898 A FR 9010898A FR 2651375 B1 FR2651375 B1 FR 2651375B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/01—Manufacture or treatment
- H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
- H10D64/311—Gate electrodes for field-effect devices
- H10D64/411—Gate electrodes for field-effect devices for FETs
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22642089 | 1989-08-31 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2651375A1 FR2651375A1 (fr) | 1991-03-01 |
| FR2651375B1 true FR2651375B1 (https=) | 1997-03-07 |
Family
ID=16844844
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR9010898A Granted FR2651375A1 (fr) | 1989-08-31 | 1990-08-31 | Structure de grille de commande pour un dispositif semiconducteur a transistor a effet de champ. |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US5019877A (https=) |
| FR (1) | FR2651375A1 (https=) |
| GB (1) | GB2236617B (https=) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5220194A (en) * | 1989-11-27 | 1993-06-15 | Motorola, Inc. | Tunable capacitor with RF-DC isolation |
| JPH0575139A (ja) * | 1991-09-12 | 1993-03-26 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
| JPH05275463A (ja) * | 1992-03-30 | 1993-10-22 | Matsushita Electric Ind Co Ltd | 半導体装置 |
| US6084277A (en) * | 1999-02-18 | 2000-07-04 | Power Integrations, Inc. | Lateral power MOSFET with improved gate design |
| JP2001015526A (ja) * | 1999-06-28 | 2001-01-19 | Nec Kansai Ltd | 電界効果トランジスタ |
| US6201283B1 (en) | 1999-09-08 | 2001-03-13 | Trw Inc. | Field effect transistor with double sided airbridge |
| JP4216189B2 (ja) * | 2001-09-04 | 2009-01-28 | エヌエックスピー ビー ヴィ | エッジ構造を備えた半導体装置の製造方法 |
| JP2004031439A (ja) * | 2002-06-21 | 2004-01-29 | Renesas Technology Corp | 半導体集積回路装置およびその製造方法 |
| CN102013437B (zh) * | 2009-09-07 | 2014-11-05 | 苏州捷芯威半导体有限公司 | 半导体器件及其制造方法 |
| CN112825333B (zh) * | 2019-11-21 | 2024-04-05 | 南通尚阳通集成电路有限公司 | 功率器件 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2937485A1 (de) * | 1979-09-17 | 1981-06-19 | Siemens AG, 1000 Berlin und 8000 München | Optische vorrichtung zum messen geringer druckdifferenzen mittels lichtintensitaetsaenderung |
| FR2526584A1 (fr) * | 1982-05-04 | 1983-11-10 | Thomson Csf | Procede de realisation d'une structure metallique de forme complexe pour semi-conducteurs et circuits integres |
| DE3578533D1 (de) * | 1984-04-28 | 1990-08-09 | Sony Corp | Halbleiterbauelement mit von source- und/oder drain-gebieten umgebenen anschlussflaechen. |
| IT1184723B (it) * | 1985-01-28 | 1987-10-28 | Telettra Lab Telefon | Transistore mesfet con strato d'aria tra le connessioni dell'elettrodo di gate al supporto e relativo procedimento difabbricazione |
| JPS61234566A (ja) * | 1985-04-11 | 1986-10-18 | Fujitsu Ltd | 電界効果トランジスタ |
| EP0225566A3 (en) * | 1985-12-03 | 1989-07-26 | Itt Industries, Inc. | Permeable gate transistor |
| US4794093A (en) * | 1987-05-01 | 1988-12-27 | Raytheon Company | Selective backside plating of gaas monolithic microwave integrated circuits |
| JPH0783053B2 (ja) * | 1987-06-19 | 1995-09-06 | 三菱電機株式会社 | 半導体装置 |
-
1990
- 1990-03-15 US US07/493,725 patent/US5019877A/en not_active Expired - Lifetime
- 1990-03-16 GB GB9006049A patent/GB2236617B/en not_active Expired - Fee Related
- 1990-08-31 FR FR9010898A patent/FR2651375A1/fr active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| GB2236617B (en) | 1993-04-28 |
| US5019877A (en) | 1991-05-28 |
| GB9006049D0 (en) | 1990-05-09 |
| GB2236617A (en) | 1991-04-10 |
| FR2651375A1 (fr) | 1991-03-01 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |
Effective date: 20070430 |