FR2648956A1 - Procede de fabrication de l'oxyde de champ d'un circuit integre sur du silicium - Google Patents

Procede de fabrication de l'oxyde de champ d'un circuit integre sur du silicium Download PDF

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Publication number
FR2648956A1
FR2648956A1 FR8908399A FR8908399A FR2648956A1 FR 2648956 A1 FR2648956 A1 FR 2648956A1 FR 8908399 A FR8908399 A FR 8908399A FR 8908399 A FR8908399 A FR 8908399A FR 2648956 A1 FR2648956 A1 FR 2648956A1
Authority
FR
France
Prior art keywords
layer
oxide
nitride
silicon
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR8908399A
Other languages
English (en)
French (fr)
Other versions
FR2648956B1 (cg-RX-API-DMAC10.html
Inventor
Simon Deleonibus
Francois Martin
Pascale Molle
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR8908399A priority Critical patent/FR2648956A1/fr
Priority to PCT/FR1990/000454 priority patent/WO1991000615A1/fr
Priority to IT67458A priority patent/IT1240955B/it
Publication of FR2648956A1 publication Critical patent/FR2648956A1/fr
Application granted granted Critical
Publication of FR2648956B1 publication Critical patent/FR2648956B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H10P14/6334—
    • H10P14/61—
    • H10P14/6316—
    • H10P14/6322—
    • H10P14/6519—
    • H10P14/662—
    • H10P14/69215—
    • H10P14/69433—
    • H10P50/283—
    • H10W10/012—
    • H10W10/13—

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Formation Of Insulating Films (AREA)
FR8908399A 1989-06-23 1989-06-23 Procede de fabrication de l'oxyde de champ d'un circuit integre sur du silicium Granted FR2648956A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR8908399A FR2648956A1 (fr) 1989-06-23 1989-06-23 Procede de fabrication de l'oxyde de champ d'un circuit integre sur du silicium
PCT/FR1990/000454 WO1991000615A1 (fr) 1989-06-23 1990-06-21 Procede de fabrication de l'oxyde de champ d'un circuit integre sur du silicium
IT67458A IT1240955B (it) 1989-06-23 1990-06-22 Procedimento per la fabbricazione dell'ossido di campo di un circuito integrato su silicio

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8908399A FR2648956A1 (fr) 1989-06-23 1989-06-23 Procede de fabrication de l'oxyde de champ d'un circuit integre sur du silicium

Publications (2)

Publication Number Publication Date
FR2648956A1 true FR2648956A1 (fr) 1990-12-28
FR2648956B1 FR2648956B1 (cg-RX-API-DMAC10.html) 1994-07-13

Family

ID=9383066

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8908399A Granted FR2648956A1 (fr) 1989-06-23 1989-06-23 Procede de fabrication de l'oxyde de champ d'un circuit integre sur du silicium

Country Status (3)

Country Link
FR (1) FR2648956A1 (cg-RX-API-DMAC10.html)
IT (1) IT1240955B (cg-RX-API-DMAC10.html)
WO (1) WO1991000615A1 (cg-RX-API-DMAC10.html)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2672731A1 (fr) * 1991-02-07 1992-08-14 France Telecom Procede d'oxydation localisee enterree d'un substrat de silicium et circuit integre correspondant.
KR100381961B1 (ko) 1999-04-26 2003-04-26 삼성전자주식회사 반도체 기판 상에 질화된 계면을 형성하는 방법

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4522681A (en) * 1984-04-23 1985-06-11 General Electric Company Method for tapered dry etching
US4764248A (en) * 1987-04-13 1988-08-16 Cypress Semiconductor Corporation Rapid thermal nitridized oxide locos process
DE3832450A1 (de) * 1987-10-19 1989-04-27 Ncr Co Verfahren zum bilden von feldoxidbereichen in einem siliziumsubstrat

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4522681A (en) * 1984-04-23 1985-06-11 General Electric Company Method for tapered dry etching
US4764248A (en) * 1987-04-13 1988-08-16 Cypress Semiconductor Corporation Rapid thermal nitridized oxide locos process
DE3832450A1 (de) * 1987-10-19 1989-04-27 Ncr Co Verfahren zum bilden von feldoxidbereichen in einem siliziumsubstrat

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. ED-30, no. 11, novembre 1983, pages 1506-1511; K.Y. CHIU et al.: "The sloped-wall SWAMI - A defect-free zero bird's-beak local oxidation process for scaled VLSI technology" *

Also Published As

Publication number Publication date
IT9067458A0 (it) 1990-06-22
IT9067458A1 (it) 1991-12-22
IT1240955B (it) 1993-12-27
FR2648956B1 (cg-RX-API-DMAC10.html) 1994-07-13
WO1991000615A1 (fr) 1991-01-10

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