FR2648956B1 - - Google Patents
Info
- Publication number
- FR2648956B1 FR2648956B1 FR8908399A FR8908399A FR2648956B1 FR 2648956 B1 FR2648956 B1 FR 2648956B1 FR 8908399 A FR8908399 A FR 8908399A FR 8908399 A FR8908399 A FR 8908399A FR 2648956 B1 FR2648956 B1 FR 2648956B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
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- H10P14/6334—
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- H10P14/61—
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- H10P14/6316—
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- H10P14/6322—
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- H10P14/6519—
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- H10P14/662—
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- H10P14/69215—
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- H10P14/69433—
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- H10P50/283—
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- H10W10/012—
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- H10W10/13—
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8908399A FR2648956A1 (fr) | 1989-06-23 | 1989-06-23 | Procede de fabrication de l'oxyde de champ d'un circuit integre sur du silicium |
| PCT/FR1990/000454 WO1991000615A1 (fr) | 1989-06-23 | 1990-06-21 | Procede de fabrication de l'oxyde de champ d'un circuit integre sur du silicium |
| IT67458A IT1240955B (it) | 1989-06-23 | 1990-06-22 | Procedimento per la fabbricazione dell'ossido di campo di un circuito integrato su silicio |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8908399A FR2648956A1 (fr) | 1989-06-23 | 1989-06-23 | Procede de fabrication de l'oxyde de champ d'un circuit integre sur du silicium |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2648956A1 FR2648956A1 (fr) | 1990-12-28 |
| FR2648956B1 true FR2648956B1 (cg-RX-API-DMAC10.html) | 1994-07-13 |
Family
ID=9383066
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR8908399A Granted FR2648956A1 (fr) | 1989-06-23 | 1989-06-23 | Procede de fabrication de l'oxyde de champ d'un circuit integre sur du silicium |
Country Status (3)
| Country | Link |
|---|---|
| FR (1) | FR2648956A1 (cg-RX-API-DMAC10.html) |
| IT (1) | IT1240955B (cg-RX-API-DMAC10.html) |
| WO (1) | WO1991000615A1 (cg-RX-API-DMAC10.html) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2672731A1 (fr) * | 1991-02-07 | 1992-08-14 | France Telecom | Procede d'oxydation localisee enterree d'un substrat de silicium et circuit integre correspondant. |
| KR100381961B1 (ko) | 1999-04-26 | 2003-04-26 | 삼성전자주식회사 | 반도체 기판 상에 질화된 계면을 형성하는 방법 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4522681A (en) * | 1984-04-23 | 1985-06-11 | General Electric Company | Method for tapered dry etching |
| US4764248A (en) * | 1987-04-13 | 1988-08-16 | Cypress Semiconductor Corporation | Rapid thermal nitridized oxide locos process |
| DE3832450A1 (de) * | 1987-10-19 | 1989-04-27 | Ncr Co | Verfahren zum bilden von feldoxidbereichen in einem siliziumsubstrat |
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1989
- 1989-06-23 FR FR8908399A patent/FR2648956A1/fr active Granted
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1990
- 1990-06-21 WO PCT/FR1990/000454 patent/WO1991000615A1/fr not_active Ceased
- 1990-06-22 IT IT67458A patent/IT1240955B/it active IP Right Grant
Also Published As
| Publication number | Publication date |
|---|---|
| IT9067458A0 (it) | 1990-06-22 |
| FR2648956A1 (fr) | 1990-12-28 |
| IT9067458A1 (it) | 1991-12-22 |
| IT1240955B (it) | 1993-12-27 |
| WO1991000615A1 (fr) | 1991-01-10 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |