FR2629274B1 - Detecteur de rayonnement infrarouge, et camera a infrarouges comportant ce detecteur - Google Patents

Detecteur de rayonnement infrarouge, et camera a infrarouges comportant ce detecteur

Info

Publication number
FR2629274B1
FR2629274B1 FR898903782A FR8903782A FR2629274B1 FR 2629274 B1 FR2629274 B1 FR 2629274B1 FR 898903782 A FR898903782 A FR 898903782A FR 8903782 A FR8903782 A FR 8903782A FR 2629274 B1 FR2629274 B1 FR 2629274B1
Authority
FR
France
Prior art keywords
infrared
same
radiation detector
camera
infrared radiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR898903782A
Other languages
English (en)
Other versions
FR2629274A1 (fr
Inventor
Eiso Yamaka
Fumio Hasegawa
Takashi Moriyama
Tamisuke Koizumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Foundation for Advancement of International Science
National Space Development Agency of Japan
Original Assignee
Foundation for Advancement of International Science
National Space Development Agency of Japan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Foundation for Advancement of International Science, National Space Development Agency of Japan filed Critical Foundation for Advancement of International Science
Publication of FR2629274A1 publication Critical patent/FR2629274A1/fr
Application granted granted Critical
Publication of FR2629274B1 publication Critical patent/FR2629274B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0312—Inorganic materials including, apart from doping materials or other impurities, only AIVBIV compounds, e.g. SiC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H01L31/1812—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table including only AIVBIV alloys, e.g. SiGe
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Light Receiving Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
FR898903782A 1988-03-24 1989-03-22 Detecteur de rayonnement infrarouge, et camera a infrarouges comportant ce detecteur Expired - Fee Related FR2629274B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63070808A JPH0712089B2 (ja) 1988-03-24 1988-03-24 赤外線センサ及び同赤外線センサを含む赤外線カメラ

Publications (2)

Publication Number Publication Date
FR2629274A1 FR2629274A1 (fr) 1989-09-29
FR2629274B1 true FR2629274B1 (fr) 1994-02-25

Family

ID=13442236

Family Applications (1)

Application Number Title Priority Date Filing Date
FR898903782A Expired - Fee Related FR2629274B1 (fr) 1988-03-24 1989-03-22 Detecteur de rayonnement infrarouge, et camera a infrarouges comportant ce detecteur

Country Status (4)

Country Link
US (1) US4939561A (fr)
JP (1) JPH0712089B2 (fr)
FR (1) FR2629274B1 (fr)
GB (1) GB2216716B (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4990988A (en) * 1989-06-09 1991-02-05 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Laterally stacked Schottky diodes for infrared sensor applications
JPH0429372A (ja) * 1990-05-24 1992-01-31 Mitsubishi Electric Corp 半導体光検出装置
US5525828A (en) * 1991-10-31 1996-06-11 International Business Machines Corporation High speed silicon-based lateral junction photodetectors having recessed electrodes and thick oxide to reduce fringing fields
US5285098A (en) * 1992-04-30 1994-02-08 Texas Instruments Incorporated Structure and method internal photoemission detection
JP3219996B2 (ja) * 1995-03-27 2001-10-15 株式会社東芝 半導体装置及びその製造方法
US6211560B1 (en) * 1995-06-16 2001-04-03 The United States Of America As Represented By The Secretary Of The Air Force Voltage tunable schottky diode photoemissive infrared detector
FR2758657B1 (fr) * 1997-01-17 1999-04-09 France Telecom Photodetecteur metal-semiconducteur-metal
US7737394B2 (en) * 2006-08-31 2010-06-15 Micron Technology, Inc. Ambient infrared detection in solid state sensors

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2927126A1 (de) * 1979-07-05 1981-01-08 Standard Elektrik Lorenz Ag Photodiode
US4533933A (en) * 1982-12-07 1985-08-06 The United States Of America As Represented By The Secretary Of The Air Force Schottky barrier infrared detector and process
JPS61224353A (ja) * 1985-03-28 1986-10-06 Sumitomo Electric Ind Ltd イメ−ジセンサ−
JPS61241985A (ja) * 1985-04-19 1986-10-28 Eizo Yamaga 赤外線検知装置
US4661829A (en) * 1985-06-05 1987-04-28 American Telephone And Telegraph Company, At&T Bell Laboratories Device using ordered semiconductor alloy
US4725870A (en) * 1985-11-18 1988-02-16 American Telephone And Telegraph Company, At&T Bell Laboratories Silicon germanium photodetector

Also Published As

Publication number Publication date
GB2216716B (en) 1992-07-15
JPH01243480A (ja) 1989-09-28
GB2216716A (en) 1989-10-11
FR2629274A1 (fr) 1989-09-29
GB8905844D0 (en) 1989-04-26
JPH0712089B2 (ja) 1995-02-08
US4939561A (en) 1990-07-03

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Legal Events

Date Code Title Description
CA Change of address
ST Notification of lapse

Effective date: 20081125