FR2615327A1 - Dispositif photovoltaique - Google Patents

Dispositif photovoltaique Download PDF

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Publication number
FR2615327A1
FR2615327A1 FR888806361A FR8806361A FR2615327A1 FR 2615327 A1 FR2615327 A1 FR 2615327A1 FR 888806361 A FR888806361 A FR 888806361A FR 8806361 A FR8806361 A FR 8806361A FR 2615327 A1 FR2615327 A1 FR 2615327A1
Authority
FR
France
Prior art keywords
sep
photovoltaic device
generating element
energy
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR888806361A
Other languages
English (en)
French (fr)
Other versions
FR2615327B1 (enrdf_load_stackoverflow
Inventor
Masayuki Iwamoto
Kouji Minami
Kaneo Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP62073152A external-priority patent/JPS633872A/ja
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Publication of FR2615327A1 publication Critical patent/FR2615327A1/fr
Application granted granted Critical
Publication of FR2615327B1 publication Critical patent/FR2615327B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/19—Photovoltaic cells having multiple potential barriers of different types, e.g. tandem cells having both PN and PIN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
FR888806361A 1987-03-27 1988-05-11 Dispositif photovoltaique Granted FR2615327A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62073152A JPS633872A (ja) 1986-03-27 1987-03-27 磁気マツト

Publications (2)

Publication Number Publication Date
FR2615327A1 true FR2615327A1 (fr) 1988-11-18
FR2615327B1 FR2615327B1 (enrdf_load_stackoverflow) 1993-02-26

Family

ID=13509923

Family Applications (1)

Application Number Title Priority Date Filing Date
FR888806361A Granted FR2615327A1 (fr) 1987-03-27 1988-05-11 Dispositif photovoltaique

Country Status (1)

Country Link
FR (1) FR2615327A1 (enrdf_load_stackoverflow)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2116364A (en) * 1982-03-03 1983-09-21 Energy Conversion Devices Inc Photovoltaic device having incident radiation directing means
JPS5954274A (ja) * 1982-09-22 1984-03-29 Sanyo Electric Co Ltd 光起電力装置
EP0113434A1 (en) * 1982-12-29 1984-07-18 Yoshihiro Hamakawa Photovoltaic device
JPS60147171A (ja) * 1984-01-12 1985-08-03 Hitachi Maxell Ltd 光起電力装置
FR2604561A1 (fr) * 1986-09-26 1988-04-01 Sanyo Electric Co Dispositif photovoltaique

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2116364A (en) * 1982-03-03 1983-09-21 Energy Conversion Devices Inc Photovoltaic device having incident radiation directing means
JPS5954274A (ja) * 1982-09-22 1984-03-29 Sanyo Electric Co Ltd 光起電力装置
EP0113434A1 (en) * 1982-12-29 1984-07-18 Yoshihiro Hamakawa Photovoltaic device
JPS60147171A (ja) * 1984-01-12 1985-08-03 Hitachi Maxell Ltd 光起電力装置
FR2604561A1 (fr) * 1986-09-26 1988-04-01 Sanyo Electric Co Dispositif photovoltaique

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
APPLIED PHYSICS LETTERS. vol. 49, no. 4, Juillet 1986, NEW YORK US pages 218 - 219; S.GUHA ET AL.: 'ENHANCEMENT OF OPEN CIRCUIT VOLTAGE IN HIGH EFFICIENCY AMORPHOUS SILICON ALLOY SOLAR CELLS' *
NACHRICHTEN TECHNIK ELEKTRONIK. vol. 36, no. 1, 1986, BERLIN DD pages 2 - 6; K.SCHADE ET AL.: 'AMORPHES SILIZIUM ANWENDUNGEN IN DER ELEKTRONIK' *
PATENT ABSTRACTS OF JAPAN vol. 8, no. 149 (E-255)(1586) 12 Juillet 1984 & JP-A-59 054 274 ( SANYO DENKI KK ) 29 Mars 1984 *
PATENT ABSTRACTS OF JAPAN vol. 9, no. 315 (E-365)(2038) 11 Décembre 1985 & JP-A-60 147 171 ( HITACHI MAXELL K.K. ) 3 Août 1985 *
PROCEEDINGS OF THE 13TH CONFERENCE ON SOLID STATE DEVICES-JAPANESE JOURNAL OF APPLIED PHYSICS-SUPPLEMENT 21-1 vol. 21, 1982, TOKYO pages 275 - 281; M.HIROSE: 'GROWTH AND CHARACTERIZATION OF AMORPHOUS HYDROGENATED SILICON' *

Also Published As

Publication number Publication date
FR2615327B1 (enrdf_load_stackoverflow) 1993-02-26

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