FR2602094B1 - Dispositif semiconducteur du type transistor bipolaire a heterojonction - Google Patents

Dispositif semiconducteur du type transistor bipolaire a heterojonction

Info

Publication number
FR2602094B1
FR2602094B1 FR8610692A FR8610692A FR2602094B1 FR 2602094 B1 FR2602094 B1 FR 2602094B1 FR 8610692 A FR8610692 A FR 8610692A FR 8610692 A FR8610692 A FR 8610692A FR 2602094 B1 FR2602094 B1 FR 2602094B1
Authority
FR
France
Prior art keywords
heterojunction
semiconductor device
bipolar transistor
transistor type
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8610692A
Other languages
English (en)
Other versions
FR2602094A1 (fr
Inventor
Peter Frijlink
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Laboratoires dElectronique Philips SAS
Original Assignee
Laboratoires dElectronique et de Physique Appliquee
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Laboratoires dElectronique et de Physique Appliquee filed Critical Laboratoires dElectronique et de Physique Appliquee
Priority to FR8610692A priority Critical patent/FR2602094B1/fr
Publication of FR2602094A1 publication Critical patent/FR2602094A1/fr
Application granted granted Critical
Publication of FR2602094B1 publication Critical patent/FR2602094B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/452—Ohmic electrodes on AIII-BV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H01L29/7371—Vertical transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
FR8610692A 1986-07-23 1986-07-23 Dispositif semiconducteur du type transistor bipolaire a heterojonction Expired FR2602094B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR8610692A FR2602094B1 (fr) 1986-07-23 1986-07-23 Dispositif semiconducteur du type transistor bipolaire a heterojonction

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8610692A FR2602094B1 (fr) 1986-07-23 1986-07-23 Dispositif semiconducteur du type transistor bipolaire a heterojonction

Publications (2)

Publication Number Publication Date
FR2602094A1 FR2602094A1 (fr) 1988-01-29
FR2602094B1 true FR2602094B1 (fr) 1988-10-21

Family

ID=9337672

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8610692A Expired FR2602094B1 (fr) 1986-07-23 1986-07-23 Dispositif semiconducteur du type transistor bipolaire a heterojonction

Country Status (1)

Country Link
FR (1) FR2602094B1 (fr)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4398963A (en) * 1980-11-19 1983-08-16 The United States Of America As Represented By The Secretary Of The Navy Method for making non-alloyed heterojunction ohmic contacts
EP0105324A4 (fr) * 1982-04-12 1986-07-24 Motorola Inc CONTACT OHMIQUE POUR GaAs DE TYPE N.
US4593457A (en) * 1984-12-17 1986-06-10 Motorola, Inc. Method for making gallium arsenide NPN transistor with self-aligned base enhancement to emitter region and metal contact

Also Published As

Publication number Publication date
FR2602094A1 (fr) 1988-01-29

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Legal Events

Date Code Title Description
ST Notification of lapse