FR2582023B1 - Procede de developpement d'un film d'un monocristal gaas sous la forme d'une seule couche moleculaire - Google Patents

Procede de developpement d'un film d'un monocristal gaas sous la forme d'une seule couche moleculaire

Info

Publication number
FR2582023B1
FR2582023B1 FR8606988A FR8606988A FR2582023B1 FR 2582023 B1 FR2582023 B1 FR 2582023B1 FR 8606988 A FR8606988 A FR 8606988A FR 8606988 A FR8606988 A FR 8606988A FR 2582023 B1 FR2582023 B1 FR 2582023B1
Authority
FR
France
Prior art keywords
developing
film
molecular layer
single crystal
gaas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR8606988A
Other languages
English (en)
French (fr)
Other versions
FR2582023A1 (fr
Inventor
Nishizawa Et Hitoshi Abe Junichi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Science and Technology Agency
Original Assignee
Research Development Corp of Japan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Research Development Corp of Japan filed Critical Research Development Corp of Japan
Publication of FR2582023A1 publication Critical patent/FR2582023A1/fr
Application granted granted Critical
Publication of FR2582023B1 publication Critical patent/FR2582023B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/42—Gallium arsenide
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/68—Crystals with laminate structure, e.g. "superlattices"

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
FR8606988A 1985-05-15 1986-05-15 Procede de developpement d'un film d'un monocristal gaas sous la forme d'une seule couche moleculaire Expired - Fee Related FR2582023B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60101379A JPS61260622A (ja) 1985-05-15 1985-05-15 ＧａＡｓ単結晶薄膜の成長法

Publications (2)

Publication Number Publication Date
FR2582023A1 FR2582023A1 (fr) 1986-11-21
FR2582023B1 true FR2582023B1 (fr) 1994-04-15

Family

ID=14299154

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8606988A Expired - Fee Related FR2582023B1 (fr) 1985-05-15 1986-05-15 Procede de developpement d'un film d'un monocristal gaas sous la forme d'une seule couche moleculaire

Country Status (4)

Country Link
JP (1) JPS61260622A (enrdf_load_stackoverflow)
DE (1) DE3616358C2 (enrdf_load_stackoverflow)
FR (1) FR2582023B1 (enrdf_load_stackoverflow)
GB (1) GB2190400B (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2162207B (en) * 1984-07-26 1989-05-10 Japan Res Dev Corp Semiconductor crystal growth apparatus
JPH0657636B2 (ja) * 1985-05-29 1994-08-03 日本電信電話株式会社 化合物半導体薄膜形成法
EP0297867B1 (en) * 1987-07-01 1993-10-06 Nec Corporation A process for the growth of iii-v group compound semiconductor crystal on a si substrate
EP2862199A4 (en) * 2012-06-18 2016-02-24 Government Of The U S A As Represented By The Secretary Of The Navy PLASMA-SUPPORTED ATOMIC LAYER EPITAXIS OF CUBIC AND HEXAGONAL INN FILMS AND ALLOYS THEREOF WITH AIN AT LOW TEMPERATURES

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1900116C3 (de) * 1969-01-02 1978-10-19 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen hxxochreiner, aus Silicium bestehender einkristalliner Schichten
US3666553A (en) * 1970-05-08 1972-05-30 Bell Telephone Labor Inc Method of growing compound semiconductor films on an amorphous substrate
JPS5129880B2 (enrdf_load_stackoverflow) * 1973-03-15 1976-08-27
EP0106537B1 (en) * 1982-10-19 1989-01-25 The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and Organometallic chemical vapour deposition of films
GB2162862B (en) * 1984-07-26 1988-10-19 Japan Res Dev Corp A method of growing a thin film single crystalline semiconductor
GB2162207B (en) * 1984-07-26 1989-05-10 Japan Res Dev Corp Semiconductor crystal growth apparatus
JPH0766906B2 (ja) * 1984-07-26 1995-07-19 新技術事業団 ＧａＡｓエピタキシャル成長方法
JPH0766910B2 (ja) * 1984-07-26 1995-07-19 新技術事業団 半導体単結晶成長装置

Also Published As

Publication number Publication date
GB8612024D0 (en) 1986-06-25
DE3616358C2 (de) 1996-02-15
JPH0556650B2 (enrdf_load_stackoverflow) 1993-08-20
GB2190400A (en) 1987-11-18
FR2582023A1 (fr) 1986-11-21
DE3616358A1 (de) 1986-11-20
GB2190400B (en) 1990-10-17
JPS61260622A (ja) 1986-11-18

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Legal Events

Date Code Title Description
TP Transmission of property
ST Notification of lapse