FR2579911B1 - - Google Patents

Info

Publication number
FR2579911B1
FR2579911B1 FR8604894A FR8604894A FR2579911B1 FR 2579911 B1 FR2579911 B1 FR 2579911B1 FR 8604894 A FR8604894 A FR 8604894A FR 8604894 A FR8604894 A FR 8604894A FR 2579911 B1 FR2579911 B1 FR 2579911B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8604894A
Other languages
French (fr)
Other versions
FR2579911A1 (zh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP7320085A external-priority patent/JPS61230317A/ja
Priority claimed from JP29496285A external-priority patent/JPS62149115A/ja
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of FR2579911A1 publication Critical patent/FR2579911A1/fr
Application granted granted Critical
Publication of FR2579911B1 publication Critical patent/FR2579911B1/fr
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
FR8604894A 1985-04-04 1986-04-04 Expired FR2579911B1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP7320085A JPS61230317A (ja) 1985-04-04 1985-04-04 多結晶質薄膜の形成方法
JP29496285A JPS62149115A (ja) 1985-12-23 1985-12-23 多結晶シリコン薄膜の形成方法

Publications (2)

Publication Number Publication Date
FR2579911A1 FR2579911A1 (zh) 1986-10-10
FR2579911B1 true FR2579911B1 (zh) 1991-03-29

Family

ID=26414350

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8604894A Expired FR2579911B1 (zh) 1985-04-04 1986-04-04

Country Status (2)

Country Link
FR (1) FR2579911B1 (zh)
GB (1) GB2174108B (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19955287A1 (de) * 1999-11-17 2001-08-02 Bosch Gmbh Robert Verfahren zum Herstellen von dotiertem polykristallinem Silicium für piezoresistive Anordnungen

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB992677A (en) * 1961-11-06 1965-05-19 Berghaus Elektrophysik Anst Method of increasing the efficiency of nuclear reactors
BE717304A (zh) * 1968-06-28 1968-12-30
CH264574A4 (de) * 1973-03-05 1977-04-29 Suwa Seikosha Kk Verfahren zum Plattieren von Uhrenteilen in einem Vakuumbehälter
US4091138A (en) * 1975-02-12 1978-05-23 Sumitomo Bakelite Company Limited Insulating film, sheet, or plate material with metallic coating and method for manufacturing same
US4066527A (en) * 1975-07-18 1978-01-03 Futaba Denshi Kogyo K. K. Method of producing semiconductor device
DE2644208C3 (de) * 1976-09-30 1981-04-30 Siemens AG, 1000 Berlin und 8000 München Verfahren zur Herstellung einer einkristallinen Schicht auf einer Unterlage
GB1598814A (en) * 1978-05-15 1981-09-23 Atomic Energy Authority Uk Cemented carbide cutting tools
JPS5617083A (en) * 1979-07-20 1981-02-18 Hitachi Ltd Semiconductor device and its manufacture
EP0029747A1 (en) * 1979-11-27 1981-06-03 Konica Corporation An apparatus for vacuum deposition and a method for forming a thin film by the use thereof
GB2090291B (en) * 1980-12-22 1985-05-15 Secr Defence Sputter ion plating of refractory metal/metal compounds
FR2513439B1 (fr) * 1981-09-18 1985-09-13 Labo Electronique Physique Procede de traitement de substrat de gaas, par implantation ionique, et substrats ainsi obtenus
US4615766A (en) * 1985-02-27 1986-10-07 International Business Machines Corporation Silicon cap for annealing gallium arsenide
JP2597976B2 (ja) * 1985-03-27 1997-04-09 株式会社東芝 半導体装置及びその製造方法
US4740481A (en) * 1986-01-21 1988-04-26 Motorola Inc. Method of preventing hillock formation in polysilicon layer by oxygen implanation

Also Published As

Publication number Publication date
GB2174108A (en) 1986-10-29
GB2174108B (en) 1989-07-19
GB8608218D0 (en) 1986-05-08
FR2579911A1 (zh) 1986-10-10

Similar Documents

Publication Publication Date Title
FR2579961B1 (zh)
DE3521138C2 (zh)
FR2587564B1 (zh)
DE8510490U1 (de) Bowdenzug mit Dichtung
DE3502406C2 (zh)
FR2579911B1 (zh)
AU549439B2 (zh)
IN161599B (zh)
BA96126A (zh)
AU3954685A (zh)
AU4708385A (zh)
GR850229B (zh)
AU4121285A (zh)
IN160367B (zh)
GR850467B (zh)
GR853156B (zh)
GR852416B (zh)
GR852198B (zh)
GR851366B (zh)
GR850564B (zh)
GR851171B (zh)
GR850827B (zh)
BE901679A (zh)
BG44657A1 (zh)
BG44643A1 (zh)

Legal Events

Date Code Title Description
ST Notification of lapse