FR2573249B1 - Procede pour la preparation d'elements semi-conducteurs a couches minces, et en particulier de cellules solaires - Google Patents

Procede pour la preparation d'elements semi-conducteurs a couches minces, et en particulier de cellules solaires

Info

Publication number
FR2573249B1
FR2573249B1 FR858516518A FR8516518A FR2573249B1 FR 2573249 B1 FR2573249 B1 FR 2573249B1 FR 858516518 A FR858516518 A FR 858516518A FR 8516518 A FR8516518 A FR 8516518A FR 2573249 B1 FR2573249 B1 FR 2573249B1
Authority
FR
France
Prior art keywords
preparation
solar cells
thin films
semiconductor elements
particular solar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR858516518A
Other languages
English (en)
French (fr)
Other versions
FR2573249A1 (fr
Inventor
Gerhard Winterling
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Airbus Defence and Space GmbH
Original Assignee
Messerschmitt Bolkow Blohm AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Messerschmitt Bolkow Blohm AG filed Critical Messerschmitt Bolkow Blohm AG
Publication of FR2573249A1 publication Critical patent/FR2573249A1/fr
Application granted granted Critical
Publication of FR2573249B1 publication Critical patent/FR2573249B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • H10P14/24—
    • H10P14/2905—
    • H10P14/2923—
    • H10P14/3208—
    • H10P14/3411—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
FR858516518A 1984-11-09 1985-11-07 Procede pour la preparation d'elements semi-conducteurs a couches minces, et en particulier de cellules solaires Expired - Lifetime FR2573249B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19843441044 DE3441044A1 (de) 1984-11-09 1984-11-09 Verfahren zur herstellung von duennschicht-halbleiterelementen, insbesondere solarzellen

Publications (2)

Publication Number Publication Date
FR2573249A1 FR2573249A1 (fr) 1986-05-16
FR2573249B1 true FR2573249B1 (fr) 1991-11-08

Family

ID=6249942

Family Applications (1)

Application Number Title Priority Date Filing Date
FR858516518A Expired - Lifetime FR2573249B1 (fr) 1984-11-09 1985-11-07 Procede pour la preparation d'elements semi-conducteurs a couches minces, et en particulier de cellules solaires

Country Status (2)

Country Link
DE (1) DE3441044A1 (enExample)
FR (1) FR2573249B1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4799968A (en) * 1986-09-26 1989-01-24 Sanyo Electric Co., Ltd. Photovoltaic device
US5155051A (en) * 1990-06-22 1992-10-13 Sanyo Electric Co., Ltd. Method of manufacturing photovoltaic device
EP1197997A4 (en) * 2000-03-23 2003-05-21 Matsushita Electric Industrial Co Ltd METHOD FOR PRODUCING A SEMICONDUCTOR CRYSTAL
DE102004061360A1 (de) * 2004-12-21 2006-07-13 Forschungszentrum Jülich GmbH Verfahren zur Herstellung einer Dünnschichtsolarzelle mit mikrokristallinem Silizium sowie Schichtfolge
CN100334744C (zh) * 2005-04-21 2007-08-29 中电电气（南京）光伏有限公司 一种硅太阳电池的结构与制作方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ES8402462A1 (es) * 1981-03-11 1984-02-01 Chronar Corp Procedimiento para la fabricacion de semiconductores amorfos
US4459163A (en) * 1981-03-11 1984-07-10 Chronar Corporation Amorphous semiconductor method

Also Published As

Publication number Publication date
DE3441044A1 (de) 1986-05-22
DE3441044C2 (enExample) 1991-04-25
FR2573249A1 (fr) 1986-05-16

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Legal Events

Date Code Title Description
TP Transmission of property
ST Notification of lapse