FR2550008B1 - Procede de croissance epitaxiale a selectivite spatiale utilisant des faisceaux ioniques - Google Patents

Procede de croissance epitaxiale a selectivite spatiale utilisant des faisceaux ioniques

Info

Publication number
FR2550008B1
FR2550008B1 FR8411533A FR8411533A FR2550008B1 FR 2550008 B1 FR2550008 B1 FR 2550008B1 FR 8411533 A FR8411533 A FR 8411533A FR 8411533 A FR8411533 A FR 8411533A FR 2550008 B1 FR2550008 B1 FR 2550008B1
Authority
FR
France
Prior art keywords
epitaxial growth
growth method
ion beams
spatial selectivity
selectivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8411533A
Other languages
English (en)
Other versions
FR2550008A1 (fr
Inventor
Won-Tien Tsang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
American Telephone and Telegraph Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Telephone and Telegraph Co Inc filed Critical American Telephone and Telegraph Co Inc
Publication of FR2550008A1 publication Critical patent/FR2550008A1/fr
Application granted granted Critical
Publication of FR2550008B1 publication Critical patent/FR2550008B1/fr
Expired legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/04—Pattern deposit, e.g. by using masks
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/08—Epitaxial-layer growth by condensing ionised vapours
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/122—Single quantum well structures
    • H01L29/125—Quantum wire structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/775—Field effect transistors with one dimensional charge carrier gas channel, e.g. quantum wire FET
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12166—Manufacturing methods
    • G02B2006/12178—Epitaxial growth
FR8411533A 1983-07-27 1984-07-20 Procede de croissance epitaxiale a selectivite spatiale utilisant des faisceaux ioniques Expired FR2550008B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US51775583A 1983-07-27 1983-07-27

Publications (2)

Publication Number Publication Date
FR2550008A1 FR2550008A1 (fr) 1985-02-01
FR2550008B1 true FR2550008B1 (fr) 1987-04-24

Family

ID=24061098

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8411533A Expired FR2550008B1 (fr) 1983-07-27 1984-07-20 Procede de croissance epitaxiale a selectivite spatiale utilisant des faisceaux ioniques

Country Status (3)

Country Link
JP (1) JPS6053012A (fr)
FR (1) FR2550008B1 (fr)
GB (1) GB2144151B (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2155042B (en) * 1984-02-21 1987-12-31 Hughes Technology Pty Ltd Laser induced ion beam generator
GB8719794D0 (en) * 1987-08-21 1987-09-30 Scient Coatings Uk Ltd Depositing surface layers on substrates
JPH0717477B2 (ja) * 1989-03-15 1995-03-01 シャープ株式会社 化合物半導体のエピタキシャル成長方法
JPH0633231B2 (ja) * 1990-01-12 1994-05-02 松下電器産業株式会社 分子線エピタキシャル成長方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3865625A (en) * 1972-10-13 1975-02-11 Bell Telephone Labor Inc Molecular beam epitaxy shadowing technique for fabricating dielectric optical waveguides
US3915765A (en) * 1973-06-25 1975-10-28 Bell Telephone Labor Inc MBE technique for fabricating semiconductor devices having low series resistance
JPS5372A (en) * 1976-06-24 1978-01-05 Agency Of Ind Science & Technol Selective doping crystal growing method
US4385946A (en) * 1981-06-19 1983-05-31 Bell Telephone Laboratories, Incorporated Rapid alteration of ion implant dopant species to create regions of opposite conductivity

Also Published As

Publication number Publication date
JPS6053012A (ja) 1985-03-26
GB2144151B (en) 1986-09-17
GB2144151A (en) 1985-02-27
FR2550008A1 (fr) 1985-02-01
GB8418799D0 (en) 1984-08-30

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Legal Events

Date Code Title Description
ST Notification of lapse