FR2547906A1 - Bande a surface amelioree d'ebullition germinee et dispositif de refroidissement de composants electroniques - Google Patents
Bande a surface amelioree d'ebullition germinee et dispositif de refroidissement de composants electroniques Download PDFInfo
- Publication number
- FR2547906A1 FR2547906A1 FR8404668A FR8404668A FR2547906A1 FR 2547906 A1 FR2547906 A1 FR 2547906A1 FR 8404668 A FR8404668 A FR 8404668A FR 8404668 A FR8404668 A FR 8404668A FR 2547906 A1 FR2547906 A1 FR 2547906A1
- Authority
- FR
- France
- Prior art keywords
- metal
- boiling
- germinated
- heat
- deposited
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000009835 boiling Methods 0.000 title claims abstract description 113
- 239000000463 material Substances 0.000 claims abstract description 33
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 20
- 238000001816 cooling Methods 0.000 claims abstract description 20
- 229910052802 copper Inorganic materials 0.000 claims abstract description 14
- 239000010949 copper Substances 0.000 claims abstract description 14
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 11
- 239000010439 graphite Substances 0.000 claims abstract description 11
- 229910052751 metal Inorganic materials 0.000 claims description 87
- 239000002184 metal Substances 0.000 claims description 87
- 239000007788 liquid Substances 0.000 claims description 29
- 239000002826 coolant Substances 0.000 claims description 22
- 238000007747 plating Methods 0.000 claims description 16
- 239000002245 particle Substances 0.000 claims description 11
- 238000009713 electroplating Methods 0.000 claims description 8
- 230000035784 germination Effects 0.000 claims description 7
- 239000011148 porous material Substances 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 239000007787 solid Substances 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 3
- 239000012808 vapor phase Substances 0.000 claims description 3
- 230000001464 adherent effect Effects 0.000 claims description 2
- 239000003795 chemical substances by application Substances 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims description 2
- 239000000843 powder Substances 0.000 claims description 2
- 239000006260 foam Substances 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 abstract description 5
- 239000011889 copper foil Substances 0.000 abstract description 5
- 239000012530 fluid Substances 0.000 abstract description 2
- 239000006261 foam material Substances 0.000 abstract 2
- 239000011521 glass Substances 0.000 abstract 1
- 125000006850 spacer group Chemical group 0.000 abstract 1
- 239000008188 pellet Substances 0.000 description 18
- 239000000758 substrate Substances 0.000 description 17
- 238000000034 method Methods 0.000 description 15
- 238000012546 transfer Methods 0.000 description 15
- 238000004519 manufacturing process Methods 0.000 description 11
- 239000012071 phase Substances 0.000 description 11
- 239000004020 conductor Substances 0.000 description 9
- 238000002474 experimental method Methods 0.000 description 7
- 239000000853 adhesive Substances 0.000 description 6
- 229920006332 epoxy adhesive Polymers 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000007654 immersion Methods 0.000 description 4
- 230000006872 improvement Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 208000001840 Dandruff Diseases 0.000 description 2
- 238000004378 air conditioning Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- MXCPYJZDGPQDRA-UHFFFAOYSA-N dialuminum;2-acetyloxybenzoic acid;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3].CC(=O)OC1=CC=CC=C1C(O)=O MXCPYJZDGPQDRA-UHFFFAOYSA-N 0.000 description 2
- 150000002118 epoxides Chemical class 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 239000003365 glass fiber Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000000197 pyrolysis Methods 0.000 description 2
- 238000005057 refrigeration Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005518 electrochemistry Effects 0.000 description 1
- 238000004100 electronic packaging Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 235000010603 pastilles Nutrition 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000002470 thermal conductor Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- CYRMSUTZVYGINF-UHFFFAOYSA-N trichlorofluoromethane Chemical compound FC(Cl)(Cl)Cl CYRMSUTZVYGINF-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/427—Cooling by change of state, e.g. use of heat pipes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
- F28F13/00—Arrangements for modifying heat-transfer, e.g. increasing, decreasing
- F28F13/18—Arrangements for modifying heat-transfer, e.g. increasing, decreasing by applying coatings, e.g. radiation-absorbing, radiation-reflecting; by surface treatment, e.g. polishing
- F28F13/185—Heat-exchange surfaces provided with microstructures or with porous coatings
- F28F13/187—Heat-exchange surfaces provided with microstructures or with porous coatings especially adapted for evaporator surfaces or condenser surfaces, e.g. with nucleation sites
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Thermal Sciences (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Electroplating Methods And Accessories (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US47819883A | 1983-03-24 | 1983-03-24 | |
| US47819783A | 1983-03-24 | 1983-03-24 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| FR2547906A1 true FR2547906A1 (fr) | 1984-12-28 |
Family
ID=27045817
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR8404668A Pending FR2547906A1 (fr) | 1983-03-24 | 1984-03-26 | Bande a surface amelioree d'ebullition germinee et dispositif de refroidissement de composants electroniques |
Country Status (5)
| Country | Link |
|---|---|
| KR (1) | KR840008212A (de) |
| AU (1) | AU2607384A (de) |
| DE (1) | DE3410767A1 (de) |
| ES (1) | ES8507731A1 (de) |
| FR (1) | FR2547906A1 (de) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3734327A1 (de) * | 1987-10-10 | 1989-04-27 | Hochtief Ag Hoch Tiefbauten | Durchschusssicheres plattenfoermiges bauteil |
| EP1081759A2 (de) * | 1999-09-03 | 2001-03-07 | Fujitsu Limited | Kühleinheit |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4995451A (en) * | 1989-12-29 | 1991-02-26 | Digital Equipment Corporation | Evaporator having etched fiber nucleation sites and method of fabricating same |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2288396A1 (fr) * | 1974-10-17 | 1976-05-14 | Gen Electric | Dispositif a semi-conducteur refroidi au moyen de tubes de refroidissement |
| DE2458789A1 (de) * | 1974-08-30 | 1976-06-16 | Licentia Gmbh | Halbleiteranordnung |
| US4106188A (en) * | 1976-04-19 | 1978-08-15 | Hughes Aircraft Company | Transistor cooling by heat pipes |
| EP0002996A1 (de) * | 1977-12-19 | 1979-07-11 | International Business Machines Corporation | Träge-unterlage für aktive Festkörper, deren Herstellung und deren Verwendung in einem Kühlsystem für solche Körper |
| FR2414181A1 (fr) * | 1978-01-09 | 1979-08-03 | Uop Inc | Tube pour echange thermique, a ailettes, a surface poreuse, et son procede de fabrication |
| GB2013243A (en) * | 1979-01-08 | 1979-08-08 | Uop Inc | Method for producing an improved heat transfer surface and an improved heat transfer member |
| FR2443515A1 (fr) * | 1978-12-06 | 1980-07-04 | Uop Inc | Surface de transmission de chaleur et son procede de fabrication |
-
1984
- 1984-03-23 ES ES530918A patent/ES8507731A1/es not_active Expired
- 1984-03-23 DE DE19843410767 patent/DE3410767A1/de not_active Withdrawn
- 1984-03-23 AU AU26073/84A patent/AU2607384A/en not_active Abandoned
- 1984-03-24 KR KR1019840001527A patent/KR840008212A/ko not_active Application Discontinuation
- 1984-03-26 FR FR8404668A patent/FR2547906A1/fr active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2458789A1 (de) * | 1974-08-30 | 1976-06-16 | Licentia Gmbh | Halbleiteranordnung |
| FR2288396A1 (fr) * | 1974-10-17 | 1976-05-14 | Gen Electric | Dispositif a semi-conducteur refroidi au moyen de tubes de refroidissement |
| US4106188A (en) * | 1976-04-19 | 1978-08-15 | Hughes Aircraft Company | Transistor cooling by heat pipes |
| EP0002996A1 (de) * | 1977-12-19 | 1979-07-11 | International Business Machines Corporation | Träge-unterlage für aktive Festkörper, deren Herstellung und deren Verwendung in einem Kühlsystem für solche Körper |
| FR2414181A1 (fr) * | 1978-01-09 | 1979-08-03 | Uop Inc | Tube pour echange thermique, a ailettes, a surface poreuse, et son procede de fabrication |
| FR2443515A1 (fr) * | 1978-12-06 | 1980-07-04 | Uop Inc | Surface de transmission de chaleur et son procede de fabrication |
| GB2013243A (en) * | 1979-01-08 | 1979-08-08 | Uop Inc | Method for producing an improved heat transfer surface and an improved heat transfer member |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3734327A1 (de) * | 1987-10-10 | 1989-04-27 | Hochtief Ag Hoch Tiefbauten | Durchschusssicheres plattenfoermiges bauteil |
| EP1081759A2 (de) * | 1999-09-03 | 2001-03-07 | Fujitsu Limited | Kühleinheit |
| EP1081759A3 (de) * | 1999-09-03 | 2003-08-27 | Fujitsu Limited | Kühleinheit |
| US7337829B2 (en) | 1999-09-03 | 2008-03-04 | Fujitsu Limited | Cooling unit |
| US7828047B2 (en) | 1999-09-03 | 2010-11-09 | Fujitsu Limited | Cooling unit |
Also Published As
| Publication number | Publication date |
|---|---|
| ES530918A0 (es) | 1985-09-01 |
| KR840008212A (ko) | 1984-12-13 |
| AU2607384A (en) | 1984-09-27 |
| DE3410767A1 (de) | 1984-10-04 |
| ES8507731A1 (es) | 1985-09-01 |
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