FR2540523B1 - Procede et dispositif de preparation de monocristaux a partir de la phase gazeuse - Google Patents

Procede et dispositif de preparation de monocristaux a partir de la phase gazeuse

Info

Publication number
FR2540523B1
FR2540523B1 FR848401457A FR8401457A FR2540523B1 FR 2540523 B1 FR2540523 B1 FR 2540523B1 FR 848401457 A FR848401457 A FR 848401457A FR 8401457 A FR8401457 A FR 8401457A FR 2540523 B1 FR2540523 B1 FR 2540523B1
Authority
FR
France
Prior art keywords
gaseous phase
single crystals
preparing single
preparing
crystals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR848401457A
Other languages
English (en)
Other versions
FR2540523A1 (fr
Inventor
Klaus Fischer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Forschungszentrum Juelich GmbH
Original Assignee
Kernforschungsanlage Juelich GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kernforschungsanlage Juelich GmbH filed Critical Kernforschungsanlage Juelich GmbH
Publication of FR2540523A1 publication Critical patent/FR2540523A1/fr
Application granted granted Critical
Publication of FR2540523B1 publication Critical patent/FR2540523B1/fr
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
FR848401457A 1983-02-07 1984-01-31 Procede et dispositif de preparation de monocristaux a partir de la phase gazeuse Expired FR2540523B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE3304060A DE3304060C2 (de) 1983-02-07 1983-02-07 Verfahren und Vorrichtung zur Herstellung von Einkristallen aus der Gasphase

Publications (2)

Publication Number Publication Date
FR2540523A1 FR2540523A1 (fr) 1984-08-10
FR2540523B1 true FR2540523B1 (fr) 1989-05-19

Family

ID=6190184

Family Applications (1)

Application Number Title Priority Date Filing Date
FR848401457A Expired FR2540523B1 (fr) 1983-02-07 1984-01-31 Procede et dispositif de preparation de monocristaux a partir de la phase gazeuse

Country Status (3)

Country Link
US (1) US4695347A (fr)
DE (1) DE3304060C2 (fr)
FR (1) FR2540523B1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4869776A (en) * 1986-07-29 1989-09-26 Sharp Kabushiki Kaisha Method for the growth of a compound semiconductor crystal
RU2046162C1 (ru) * 1992-12-01 1995-10-20 Научно-производственное предприятие "Принсипиа-Оптикс" Способ выращивания монокристаллов из паровой фазы и устройство для его осуществления
WO1998000587A1 (fr) * 1996-07-02 1998-01-08 Jury Viktorovich Klevkov Procede de production de composes cristallins d'une grande purete et dispositif de mise en oeuvre de ce procede

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB943857A (en) * 1961-05-16 1963-12-11 Ass Elect Ind Improvements relating to methods of growing crystals
DE1255635B (de) * 1962-06-14 1967-12-07 Siemens Ag Verfahren zum Herstellen kristalliner, insbesondere einkristalliner Schichten aus halbleitenden Stoffen
US3502516A (en) * 1964-11-06 1970-03-24 Siemens Ag Method for producing pure semiconductor material for electronic purposes
CA1060762A (fr) * 1975-07-01 1979-08-21 Wayne F. Schnepple Methode et appareillage pour la culture de cristaux de hg12
US4332833A (en) * 1980-02-29 1982-06-01 Bell Telephone Laboratories, Incorporated Method for optical monitoring in materials fabrication
US4434025A (en) * 1981-06-04 1984-02-28 Robillard Jean J Controlling crystallinity and thickness of monocrystalline layer by use of an elliptically polarized beam of light
NL8200769A (nl) * 1982-02-25 1982-07-01 John Purnell Glass Werkwijze en inrichting voor het maken van vezels.
US4439267A (en) * 1982-09-29 1984-03-27 The United States Of America As Represented By The Secretary Of The Army Vapor-phase method for growing mercury cadmium telluride

Also Published As

Publication number Publication date
US4695347A (en) 1987-09-22
DE3304060C2 (de) 1986-03-20
FR2540523A1 (fr) 1984-08-10
DE3304060A1 (de) 1984-08-09

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Legal Events

Date Code Title Description
ST Notification of lapse