FR2531819A1 - Embase pour laser a semi-conducteur et son procede de fabrication - Google Patents

Embase pour laser a semi-conducteur et son procede de fabrication Download PDF

Info

Publication number
FR2531819A1
FR2531819A1 FR8214042A FR8214042A FR2531819A1 FR 2531819 A1 FR2531819 A1 FR 2531819A1 FR 8214042 A FR8214042 A FR 8214042A FR 8214042 A FR8214042 A FR 8214042A FR 2531819 A1 FR2531819 A1 FR 2531819A1
Authority
FR
France
Prior art keywords
base
slot
lamella
support
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR8214042A
Other languages
English (en)
French (fr)
Other versions
FR2531819B1 (Direct
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to FR8214042A priority Critical patent/FR2531819A1/fr
Priority to EP83401626A priority patent/EP0101374B1/fr
Priority to DE8383401626T priority patent/DE3369033D1/de
Priority to CA000434081A priority patent/CA1209235A/en
Priority to US06/521,106 priority patent/US4584688A/en
Priority to JP58145782A priority patent/JPS5948978A/ja
Publication of FR2531819A1 publication Critical patent/FR2531819A1/fr
Application granted granted Critical
Publication of FR2531819B1 publication Critical patent/FR2531819B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02315—Support members, e.g. bases or carriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Semiconductor Lasers (AREA)
  • Ceramic Products (AREA)
  • Die Bonding (AREA)
FR8214042A 1982-08-12 1982-08-12 Embase pour laser a semi-conducteur et son procede de fabrication Granted FR2531819A1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR8214042A FR2531819A1 (fr) 1982-08-12 1982-08-12 Embase pour laser a semi-conducteur et son procede de fabrication
EP83401626A EP0101374B1 (fr) 1982-08-12 1983-08-08 Embase pour laser à semi-conducteur et son procédé de fabrication
DE8383401626T DE3369033D1 (en) 1982-08-12 1983-08-08 Semiconductor laser substrate and process for its production
CA000434081A CA1209235A (en) 1982-08-12 1983-08-08 Base for a semiconductor laser and its production process
US06/521,106 US4584688A (en) 1982-08-12 1983-08-08 Base for a semiconductor laser
JP58145782A JPS5948978A (ja) 1982-08-12 1983-08-11 半導体レ−ザ用ベ−スおよびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8214042A FR2531819A1 (fr) 1982-08-12 1982-08-12 Embase pour laser a semi-conducteur et son procede de fabrication

Publications (2)

Publication Number Publication Date
FR2531819A1 true FR2531819A1 (fr) 1984-02-17
FR2531819B1 FR2531819B1 (Direct) 1985-03-08

Family

ID=9276828

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8214042A Granted FR2531819A1 (fr) 1982-08-12 1982-08-12 Embase pour laser a semi-conducteur et son procede de fabrication

Country Status (6)

Country Link
US (1) US4584688A (Direct)
EP (1) EP0101374B1 (Direct)
JP (1) JPS5948978A (Direct)
CA (1) CA1209235A (Direct)
DE (1) DE3369033D1 (Direct)
FR (1) FR2531819A1 (Direct)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4688076A (en) * 1983-04-22 1987-08-18 The Charles Stark Draper Laboratory, Inc. Noise reducing heat sink for semiconductor laser diodes
FR2550023B1 (fr) * 1983-07-25 1987-03-27 Auffret Rene Source lumineuse infrarouge comprenant un laser a semiconducteur associe a des moyens de selection de mode et d'asservissement en puissance
US4820659A (en) * 1986-07-16 1989-04-11 General Electric Company Method of making a semiconductor device assembly
US4797728A (en) * 1986-07-16 1989-01-10 General Electric Company Semiconductor device assembly and method of making same
JPH0750813B2 (ja) * 1988-05-23 1995-05-31 三菱電機株式会社 半導体レーザ素子用サブマウント
US6869231B2 (en) * 2002-05-01 2005-03-22 Jds Uniphase Corporation Transmitters, receivers, and transceivers including an optical bench
US7061949B1 (en) * 2002-08-16 2006-06-13 Jds Uniphase Corporation Methods, apparatus, and systems with semiconductor laser packaging for high modulation bandwidth
US20060038302A1 (en) * 2004-08-19 2006-02-23 Kejun Zeng Thermal fatigue resistant tin-lead-silver solder

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2050896A (en) * 1979-06-11 1981-01-14 Philips Nv Cooling blocks for semiconductor lasers

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5314588A (en) * 1976-07-26 1978-02-09 Mitsubishi Electric Corp Optical device
JPS55148483A (en) * 1979-05-08 1980-11-19 Canon Inc Semiconductor laser device
JPS56104485A (en) * 1980-01-23 1981-08-20 Canon Inc Semiconductor laser device
NL181963C (nl) * 1979-06-26 1987-12-01 Philips Nv Halfgeleiderlaserinrichting.

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2050896A (en) * 1979-06-11 1981-01-14 Philips Nv Cooling blocks for semiconductor lasers

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JOURNAL OF APPLIED PHYSICS, vol. 46, no. 2, février 1975, pages 855-862, New York, US *

Also Published As

Publication number Publication date
US4584688A (en) 1986-04-22
EP0101374B1 (fr) 1987-01-07
CA1209235A (en) 1986-08-05
FR2531819B1 (Direct) 1985-03-08
DE3369033D1 (en) 1987-02-12
EP0101374A3 (en) 1984-04-11
JPS5948978A (ja) 1984-03-21
EP0101374A2 (fr) 1984-02-22

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Legal Events

Date Code Title Description
TP Transmission of property
TP Transmission of property
ST Notification of lapse