FR2531573B1 - Transistor integre contre les surtensions - Google Patents

Transistor integre contre les surtensions

Info

Publication number
FR2531573B1
FR2531573B1 FR8312860A FR8312860A FR2531573B1 FR 2531573 B1 FR2531573 B1 FR 2531573B1 FR 8312860 A FR8312860 A FR 8312860A FR 8312860 A FR8312860 A FR 8312860A FR 2531573 B1 FR2531573 B1 FR 2531573B1
Authority
FR
France
Prior art keywords
integrated overvoltage
transistor
overvoltage transistor
integrated
overvoltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8312860A
Other languages
English (en)
Other versions
FR2531573A1 (fr
Inventor
Felice Versiglia
Paolo Ferrali
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
ATES Componenti Elettronici SpA
SGS ATES Componenti Elettronici SpA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ATES Componenti Elettronici SpA, SGS ATES Componenti Elettronici SpA filed Critical ATES Componenti Elettronici SpA
Publication of FR2531573A1 publication Critical patent/FR2531573A1/fr
Application granted granted Critical
Publication of FR2531573B1 publication Critical patent/FR2531573B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
FR8312860A 1982-08-05 1983-08-04 Transistor integre contre les surtensions Expired FR2531573B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT8222745A IT1210916B (it) 1982-08-05 1982-08-05 Transistore integrato protetto contro le sovratensioni.

Publications (2)

Publication Number Publication Date
FR2531573A1 FR2531573A1 (fr) 1984-02-10
FR2531573B1 true FR2531573B1 (fr) 1986-11-28

Family

ID=11199946

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8312860A Expired FR2531573B1 (fr) 1982-08-05 1983-08-04 Transistor integre contre les surtensions

Country Status (5)

Country Link
JP (1) JPS5963761A (fr)
DE (1) DE3328246A1 (fr)
FR (1) FR2531573B1 (fr)
GB (1) GB2128022B (fr)
IT (1) IT1210916B (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1236797B (it) * 1989-11-17 1993-04-02 St Microelectronics Srl Dispositivo monolitico di potenza a semiconduttore di tipo verticale con una protezione contro le correnti parassite.
US5227657A (en) * 1991-12-20 1993-07-13 Intel Corporation Base-emitter reverse bias protection for bicmos ic
DE4207349A1 (de) * 1992-03-07 1993-09-09 Telefunken Microelectron Leistungs-spannungsbegrenzungsschaltung

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4291319A (en) * 1976-05-19 1981-09-22 National Semiconductor Corporation Open base bipolar transistor protective device
US4302792A (en) * 1980-06-26 1981-11-24 Rca Corporation Transistor protection circuit

Also Published As

Publication number Publication date
DE3328246A1 (de) 1984-02-09
GB8321237D0 (en) 1983-09-07
GB2128022B (en) 1986-03-12
IT8222745A0 (it) 1982-08-05
GB2128022A (en) 1984-04-18
FR2531573A1 (fr) 1984-02-10
IT1210916B (it) 1989-09-29
JPS5963761A (ja) 1984-04-11

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Legal Events

Date Code Title Description
CD Change of name or company name
D6 Patent endorsed licences of rights
ST Notification of lapse