DE3465831D1 - Polysilicon fets - Google Patents

Polysilicon fets

Info

Publication number
DE3465831D1
DE3465831D1 DE8484105160T DE3465831T DE3465831D1 DE 3465831 D1 DE3465831 D1 DE 3465831D1 DE 8484105160 T DE8484105160 T DE 8484105160T DE 3465831 T DE3465831 T DE 3465831T DE 3465831 D1 DE3465831 D1 DE 3465831D1
Authority
DE
Germany
Prior art keywords
fets
polysilicon
polysilicon fets
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8484105160T
Other languages
English (en)
Inventor
Satwinder Malhi
Rajiv Shah
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Application granted granted Critical
Publication of DE3465831D1 publication Critical patent/DE3465831D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78672—Polycrystalline or microcrystalline silicon transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thin Film Transistor (AREA)
DE8484105160T 1983-06-17 1984-05-08 Polysilicon fets Expired DE3465831D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US50515683A 1983-06-17 1983-06-17

Publications (1)

Publication Number Publication Date
DE3465831D1 true DE3465831D1 (de) 1987-10-08

Family

ID=24009248

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8484105160T Expired DE3465831D1 (de) 1983-06-17 1984-05-08 Polysilicon fets

Country Status (3)

Country Link
EP (1) EP0129037B1 (de)
JP (1) JPS6074479A (de)
DE (1) DE3465831D1 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8715959D0 (en) * 1987-07-07 1987-08-12 British Petroleum Co Plc Field effect transistors
DE68916401T2 (de) * 1988-10-03 1994-11-17 Toshiba Kawasaki Kk Feldeffekttransistor auf einem Isolator und Verfahren zu seiner Herstellung.
US5112764A (en) * 1990-09-04 1992-05-12 North American Philips Corporation Method for the fabrication of low leakage polysilicon thin film transistors
EP0650190B1 (de) * 1993-10-26 2000-10-04 International Business Machines Corporation Abhärtung gegen die Auslösung von Einzelereignissen für die VLSI-Technologie ohne die Schaltungen neu zu gestalten
WO2011101463A1 (en) * 2010-02-19 2011-08-25 University College Cork - National University Of Ireland, Cork A transistor device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4977582A (de) * 1972-11-27 1974-07-26
JPS5116884A (ja) * 1974-08-01 1976-02-10 Suwa Seikosha Kk Handotaisochi
JPS57160123A (en) * 1981-03-30 1982-10-02 Hitachi Ltd Semiconductor device
EP0073603B1 (de) * 1981-08-19 1987-08-26 Hitachi, Ltd. Polykristalliner Dünnfilmtransistor und integrierte Schaltung mit solchen Transistoren und eine Anzeigevorrichtung die eine solche Schaltung enthält

Also Published As

Publication number Publication date
EP0129037A1 (de) 1984-12-27
EP0129037B1 (de) 1987-09-02
JPS6074479A (ja) 1985-04-26

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee