FR2517888B1 - Dispositif a semi-conducteur comportant une structure de grille associee a une jonction de faible profondeur - Google Patents

Dispositif a semi-conducteur comportant une structure de grille associee a une jonction de faible profondeur

Info

Publication number
FR2517888B1
FR2517888B1 FR8219965A FR8219965A FR2517888B1 FR 2517888 B1 FR2517888 B1 FR 2517888B1 FR 8219965 A FR8219965 A FR 8219965A FR 8219965 A FR8219965 A FR 8219965A FR 2517888 B1 FR2517888 B1 FR 2517888B1
Authority
FR
France
Prior art keywords
semiconductor device
grid structure
structure associated
shallow depth
shallow
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR8219965A
Other languages
English (en)
Other versions
FR2517888A1 (fr
Inventor
Chung Yih Chen
Alfred Yi Cho
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of FR2517888A1 publication Critical patent/FR2517888A1/fr
Application granted granted Critical
Publication of FR2517888B1 publication Critical patent/FR2517888B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/47—Schottky barrier electrodes
    • H01L29/475—Schottky barrier electrodes on AIII-BV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
FR8219965A 1981-12-04 1982-11-29 Dispositif a semi-conducteur comportant une structure de grille associee a une jonction de faible profondeur Expired - Fee Related FR2517888B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/327,551 US4471367A (en) 1981-12-04 1981-12-04 MESFET Using a shallow junction gate structure on GaInAs

Publications (2)

Publication Number Publication Date
FR2517888A1 FR2517888A1 (fr) 1983-06-10
FR2517888B1 true FR2517888B1 (fr) 1990-09-28

Family

ID=23277023

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8219965A Expired - Fee Related FR2517888B1 (fr) 1981-12-04 1982-11-29 Dispositif a semi-conducteur comportant une structure de grille associee a une jonction de faible profondeur

Country Status (3)

Country Link
US (1) US4471367A (fr)
JP (1) JPH0732167B2 (fr)
FR (1) FR2517888B1 (fr)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4590502A (en) * 1983-03-07 1986-05-20 University Of Illinois Camel gate field effect transistor device
EP0160377A1 (fr) * 1984-03-28 1985-11-06 International Standard Electric Corporation Phototransistor à effet de champ et méthode pour sa fabrication
EP0162942B1 (fr) * 1984-05-30 1989-03-01 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. Dispositif semi-conducteur pour détecter des rayonnements électromagnétiques ou des particules
US4791072A (en) * 1984-06-15 1988-12-13 American Telephone And Telegraph Company, At&T Bell Laboratories Method for making a complementary device containing MODFET
EP0200933B1 (fr) * 1985-04-05 1992-11-04 Nec Corporation Transistor à hétérojonction ayant des caractéristiques bipolaires
US4632713A (en) * 1985-07-31 1986-12-30 Texas Instruments Incorporated Process of making Schottky barrier devices formed by diffusion before contacting
US4960718A (en) * 1985-12-13 1990-10-02 Allied-Signal Inc. MESFET device having a semiconductor surface barrier layer
JP2557373B2 (ja) * 1986-04-05 1996-11-27 住友電気工業株式会社 化合物半導体装置
US4812886A (en) * 1987-02-09 1989-03-14 International Business Machines Corporation Multilayer contact apparatus and method
US4882608A (en) * 1987-02-09 1989-11-21 International Business Machines Corporation Multilayer semiconductor device having multiple paths of current flow
JPS63276267A (ja) * 1987-05-08 1988-11-14 Fujitsu Ltd 半導体装置の製造方法
US5225369A (en) * 1990-11-09 1993-07-06 Menlo Industries, Inc. Tunnel diode detector for microwave frequency applications
JP3127874B2 (ja) * 1998-02-12 2001-01-29 日本電気株式会社 電界効果トランジスタ及びその製造方法
US6380552B2 (en) 1999-05-28 2002-04-30 Hrl Laboratories, Llc Low turn-on voltage InP Schottky device and method
US8232561B2 (en) * 2006-06-29 2012-07-31 University Of Florida Research Foundation, Inc. Nanotube enabled, gate-voltage controlled light emitting diodes
US20090140301A1 (en) * 2007-11-29 2009-06-04 Hudait Mantu K Reducing contact resistance in p-type field effect transistors
EP2915161B1 (fr) 2012-11-05 2020-08-19 University of Florida Research Foundation, Inc. Compensation de luminosité dans un affichage
JP2020500424A (ja) * 2016-11-08 2020-01-09 マサチューセッツ インスティテュート オブ テクノロジー 層転写のための転位フィルタ処理のためのシステムおよび方法
DE102019003068A1 (de) 2019-04-30 2020-11-05 3-5 Power Electronics GmbH Stapelförmige hochsperrende lnGaAS-Halbleiterleistungsdiode

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1459231A (en) * 1973-06-26 1976-12-22 Mullard Ltd Semiconductor devices
US4075651A (en) * 1976-03-29 1978-02-21 Varian Associates, Inc. High speed fet employing ternary and quarternary iii-v active layers
DE3072175D1 (de) * 1979-12-28 1990-04-26 Fujitsu Ltd Halbleitervorrichtungen mit heterouebergang.
US4350993A (en) * 1980-06-16 1982-09-21 The United States Of America As Represented By The Secretary Of The Navy Heterojunction and Schottky barrier EBS targets

Also Published As

Publication number Publication date
JPH0732167B2 (ja) 1995-04-10
US4471367A (en) 1984-09-11
JPS58105578A (ja) 1983-06-23
FR2517888A1 (fr) 1983-06-10

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Legal Events

Date Code Title Description
ST Notification of lapse