FR2505092A1 - Dispositif de dephasage variable, a commande electronique, comportant un transistor a effet de champ a grille longue et circuit d'utilisation d'un tel dispositif - Google Patents

Dispositif de dephasage variable, a commande electronique, comportant un transistor a effet de champ a grille longue et circuit d'utilisation d'un tel dispositif Download PDF

Info

Publication number
FR2505092A1
FR2505092A1 FR8108664A FR8108664A FR2505092A1 FR 2505092 A1 FR2505092 A1 FR 2505092A1 FR 8108664 A FR8108664 A FR 8108664A FR 8108664 A FR8108664 A FR 8108664A FR 2505092 A1 FR2505092 A1 FR 2505092A1
Authority
FR
France
Prior art keywords
gate
source
effect transistor
drain
phase shift
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR8108664A
Other languages
English (en)
French (fr)
Other versions
FR2505092B1 (cg-RX-API-DMAC7.html
Inventor
Felix Diamand
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR8108664A priority Critical patent/FR2505092A1/fr
Priority to EP82400733A priority patent/EP0064905B1/fr
Priority to DE8282400733T priority patent/DE3260089D1/de
Priority to US06/372,797 priority patent/US4450372A/en
Priority to JP57071633A priority patent/JPS57185718A/ja
Publication of FR2505092A1 publication Critical patent/FR2505092A1/fr
Application granted granted Critical
Publication of FR2505092B1 publication Critical patent/FR2505092B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H11/00—Networks using active elements
    • H03H11/02—Multiple-port networks
    • H03H11/16—Networks for phase shifting
    • H03H11/20—Two-port phase shifters providing an adjustable phase shift

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Variable-Direction Aerials And Aerial Arrays (AREA)
  • Networks Using Active Elements (AREA)
FR8108664A 1981-04-30 1981-04-30 Dispositif de dephasage variable, a commande electronique, comportant un transistor a effet de champ a grille longue et circuit d'utilisation d'un tel dispositif Granted FR2505092A1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR8108664A FR2505092A1 (fr) 1981-04-30 1981-04-30 Dispositif de dephasage variable, a commande electronique, comportant un transistor a effet de champ a grille longue et circuit d'utilisation d'un tel dispositif
EP82400733A EP0064905B1 (fr) 1981-04-30 1982-04-23 Dispositif de déphasage variable, à commande électronique, comportant un transistor à effet de champ à grille longue, et circuit d'utilisation d'un tel dispositif
DE8282400733T DE3260089D1 (en) 1981-04-30 1982-04-23 Elektronically controlled phase-shifting device using a field effect transistor with a long gate, and circuit using such a device
US06/372,797 US4450372A (en) 1981-04-30 1982-04-28 Electronic control variable phase shift device comprising a long gate field effect-transistor and a circuit using such a device
JP57071633A JPS57185718A (en) 1981-04-30 1982-04-30 Electronic controlled variable phase shift device with long gate field effect transistor and circuit using same device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8108664A FR2505092A1 (fr) 1981-04-30 1981-04-30 Dispositif de dephasage variable, a commande electronique, comportant un transistor a effet de champ a grille longue et circuit d'utilisation d'un tel dispositif

Publications (2)

Publication Number Publication Date
FR2505092A1 true FR2505092A1 (fr) 1982-11-05
FR2505092B1 FR2505092B1 (cg-RX-API-DMAC7.html) 1984-03-16

Family

ID=9257959

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8108664A Granted FR2505092A1 (fr) 1981-04-30 1981-04-30 Dispositif de dephasage variable, a commande electronique, comportant un transistor a effet de champ a grille longue et circuit d'utilisation d'un tel dispositif

Country Status (5)

Country Link
US (1) US4450372A (cg-RX-API-DMAC7.html)
EP (1) EP0064905B1 (cg-RX-API-DMAC7.html)
JP (1) JPS57185718A (cg-RX-API-DMAC7.html)
DE (1) DE3260089D1 (cg-RX-API-DMAC7.html)
FR (1) FR2505092A1 (cg-RX-API-DMAC7.html)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2550889B1 (fr) * 1983-08-17 1985-10-11 Thomson Csf Dispositif amplificateur a effet de champ, fonctionnant dans les hyperfrequences, par transfert d'electrons
US4647789A (en) * 1984-09-14 1987-03-03 Rca Corporation Active element microwave phase shifter
FR2575346B1 (fr) * 1984-12-21 1987-01-16 Thomson Csf Dephaseur hyperfrequence a commande electronique
US5093667A (en) * 1989-10-16 1992-03-03 Itt Corporation T/R module with error correction
US5039959A (en) * 1990-09-20 1991-08-13 Rockwell International Corporation Phase switching circuit
JP2003007976A (ja) * 2001-06-25 2003-01-10 Mitsubishi Electric Corp 半導体装置及びモジュール装置
US10686487B2 (en) * 2015-06-23 2020-06-16 Eridan Communications, Inc. Universal transmit/receive module for radar and communications

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3254231A (en) * 1962-07-10 1966-05-31 Philco Corp Frequency changer employing a moving sonic-energy-reflecting boundary in a semiconductor medium
US3313952A (en) * 1963-10-25 1967-04-11 Cons Electronics Ind Phase sensitive switching element
US3716730A (en) * 1971-04-19 1973-02-13 Motorola Inc Intermodulation rejection capabilities of field-effect transistor radio frequency amplifiers and mixers
US3727078A (en) * 1972-03-30 1973-04-10 Nat Semiconductor Corp Integrated circuit balanced mixer apparatus

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
EXBK/80 *

Also Published As

Publication number Publication date
JPS57185718A (en) 1982-11-16
FR2505092B1 (cg-RX-API-DMAC7.html) 1984-03-16
US4450372A (en) 1984-05-22
DE3260089D1 (en) 1984-05-10
EP0064905A1 (fr) 1982-11-17
EP0064905B1 (fr) 1984-04-04

Similar Documents

Publication Publication Date Title
EP0551038B1 (fr) Protection générale d'un circuit intégré contre les surcharges permanentes et décharges électrostatiques
FR2524714A1 (fr) Transistor a couche mince
FR2509931A1 (cg-RX-API-DMAC7.html)
FR2533369A1 (fr) Circuit de protection pour dispositifs a circuit integre et structure de semi-conducteur pour proteger un circuit integre
FR2600821A1 (fr) Dispositif semi-conducteur a heterojonction et double canal, son application a un transistor a effet de champ, et son application a un dispositif de transductance negative
EP3134972B1 (fr) Cellule de commutation de puissance a transistors a effet de champ de type normalement conducteur
EP0150140B1 (fr) Circuit de polarisation d'un transistor à effet de champ
FR2510781A1 (fr) Generateur de tension de reference
FR2517886A1 (fr) Circuit limitateur-transducteur de signaux en alternatif codes en forme binaire, servant d'etage d'entree d'un circuit integre igfet
FR2505092A1 (fr) Dispositif de dephasage variable, a commande electronique, comportant un transistor a effet de champ a grille longue et circuit d'utilisation d'un tel dispositif
EP3082072A1 (fr) Bloc récepteur d'une radio-étiquette
FR2640445A1 (fr) Circuit de commutation d'un element inductif pour circuit de dephasage
EP2962077A1 (fr) Dispositif de détection de rayonnement électromagnétique
EP0148706A2 (fr) Cellule à impédance contrôlable et circuit de contrôle de cette cellule
FR2668855A1 (fr) Dispositif a semiconducteurs comportant deux groupes de transistors elementaires disposes face a face.
FR2786962A1 (fr) Antenne active a reseau de dephasage
FR2515448A1 (fr) Dispositif hyperfrequence a large bande generateur des harmoniques d'ordre pair d'un signal incident et systeme comportant un tel dispositif
FR2697698A1 (fr) Dispositif semiconducteur comprenant un circuit amplificateur distribué monolithiquement intégré, à large bande et fort gain.
FR2476916A1 (fr) Dispositif de detection et de traitement de rayonnement electromagnetique
FR2494040A1 (fr) Dispositif a circuits integres a semiconducteurs proteges contre les surtensions accidentelles
EP0596562A1 (fr) Dispositif comprenant un circuit pour traiter un signal alternatif
EP0347985B1 (fr) Circuit actif hyperfréquences du type passe-tout
EP0420106B1 (fr) Atténuateur à transistor à effet de champ bigrille
EP0169594B1 (fr) Circuit de polarisation reglable et de liaison hyperfrequence
EP3590190B1 (fr) Cellule de commutation de puissance isolee

Legal Events

Date Code Title Description
ST Notification of lapse