DE3260089D1 - Elektronically controlled phase-shifting device using a field effect transistor with a long gate, and circuit using such a device - Google Patents
Elektronically controlled phase-shifting device using a field effect transistor with a long gate, and circuit using such a deviceInfo
- Publication number
- DE3260089D1 DE3260089D1 DE8282400733T DE3260089T DE3260089D1 DE 3260089 D1 DE3260089 D1 DE 3260089D1 DE 8282400733 T DE8282400733 T DE 8282400733T DE 3260089 T DE3260089 T DE 3260089T DE 3260089 D1 DE3260089 D1 DE 3260089D1
- Authority
- DE
- Germany
- Prior art keywords
- elektronically
- circuit
- field effect
- effect transistor
- controlled phase
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005669 field effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H11/00—Networks using active elements
- H03H11/02—Multiple-port networks
- H03H11/16—Networks for phase shifting
- H03H11/20—Two-port phase shifters providing an adjustable phase shift
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8108664A FR2505092A1 (fr) | 1981-04-30 | 1981-04-30 | Dispositif de dephasage variable, a commande electronique, comportant un transistor a effet de champ a grille longue et circuit d'utilisation d'un tel dispositif |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3260089D1 true DE3260089D1 (en) | 1984-05-10 |
Family
ID=9257959
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8282400733T Expired DE3260089D1 (en) | 1981-04-30 | 1982-04-23 | Elektronically controlled phase-shifting device using a field effect transistor with a long gate, and circuit using such a device |
Country Status (5)
Country | Link |
---|---|
US (1) | US4450372A (de) |
EP (1) | EP0064905B1 (de) |
JP (1) | JPS57185718A (de) |
DE (1) | DE3260089D1 (de) |
FR (1) | FR2505092A1 (de) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2550889B1 (fr) * | 1983-08-17 | 1985-10-11 | Thomson Csf | Dispositif amplificateur a effet de champ, fonctionnant dans les hyperfrequences, par transfert d'electrons |
US4647789A (en) * | 1984-09-14 | 1987-03-03 | Rca Corporation | Active element microwave phase shifter |
FR2575346B1 (fr) * | 1984-12-21 | 1987-01-16 | Thomson Csf | Dephaseur hyperfrequence a commande electronique |
US5093667A (en) * | 1989-10-16 | 1992-03-03 | Itt Corporation | T/R module with error correction |
US5039959A (en) * | 1990-09-20 | 1991-08-13 | Rockwell International Corporation | Phase switching circuit |
JP2003007976A (ja) * | 2001-06-25 | 2003-01-10 | Mitsubishi Electric Corp | 半導体装置及びモジュール装置 |
US10686487B2 (en) * | 2015-06-23 | 2020-06-16 | Eridan Communications, Inc. | Universal transmit/receive module for radar and communications |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3254231A (en) * | 1962-07-10 | 1966-05-31 | Philco Corp | Frequency changer employing a moving sonic-energy-reflecting boundary in a semiconductor medium |
US3313952A (en) * | 1963-10-25 | 1967-04-11 | Cons Electronics Ind | Phase sensitive switching element |
US3716730A (en) * | 1971-04-19 | 1973-02-13 | Motorola Inc | Intermodulation rejection capabilities of field-effect transistor radio frequency amplifiers and mixers |
US3727078A (en) * | 1972-03-30 | 1973-04-10 | Nat Semiconductor Corp | Integrated circuit balanced mixer apparatus |
-
1981
- 1981-04-30 FR FR8108664A patent/FR2505092A1/fr active Granted
-
1982
- 1982-04-23 EP EP82400733A patent/EP0064905B1/de not_active Expired
- 1982-04-23 DE DE8282400733T patent/DE3260089D1/de not_active Expired
- 1982-04-28 US US06/372,797 patent/US4450372A/en not_active Expired - Fee Related
- 1982-04-30 JP JP57071633A patent/JPS57185718A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
US4450372A (en) | 1984-05-22 |
FR2505092A1 (fr) | 1982-11-05 |
EP0064905A1 (de) | 1982-11-17 |
FR2505092B1 (de) | 1984-03-16 |
JPS57185718A (en) | 1982-11-16 |
EP0064905B1 (de) | 1984-04-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8339 | Ceased/non-payment of the annual fee |