FR2499766A1 - NMOS integrated circuit capacitors using poly-silicon gates - uses auxiliary ion implant for capacitors and auto alignment diffusion for telephone analogue=to=digital converter - Google Patents
NMOS integrated circuit capacitors using poly-silicon gates - uses auxiliary ion implant for capacitors and auto alignment diffusion for telephone analogue=to=digital converter Download PDFInfo
- Publication number
- FR2499766A1 FR2499766A1 FR8102663A FR8102663A FR2499766A1 FR 2499766 A1 FR2499766 A1 FR 2499766A1 FR 8102663 A FR8102663 A FR 8102663A FR 8102663 A FR8102663 A FR 8102663A FR 2499766 A1 FR2499766 A1 FR 2499766A1
- Authority
- FR
- France
- Prior art keywords
- capacitors
- capacitor
- transistors
- voltage
- zones
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000003990 capacitor Substances 0.000 title claims abstract description 133
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 24
- 238000009792 diffusion process Methods 0.000 title description 3
- 239000007943 implant Substances 0.000 title 1
- 238000000034 method Methods 0.000 claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 238000002513 implantation Methods 0.000 claims abstract description 15
- 238000005468 ion implantation Methods 0.000 claims abstract description 15
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 5
- 239000010703 silicon Substances 0.000 claims abstract description 5
- 238000004519 manufacturing process Methods 0.000 claims description 18
- 238000006243 chemical reaction Methods 0.000 claims description 11
- 238000005070 sampling Methods 0.000 claims description 9
- 230000008569 process Effects 0.000 claims description 8
- -1 phosphorus ions Chemical class 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052785 arsenic Inorganic materials 0.000 claims description 3
- 238000011156 evaluation Methods 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- 230000003247 decreasing effect Effects 0.000 claims 1
- 229920005591 polysilicon Polymers 0.000 abstract description 14
- 238000010586 diagram Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 4
- 230000014509 gene expression Effects 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 230000001960 triggered effect Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 241001529544 Riccardia Species 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 238000013475 authorization Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000004069 differentiation Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/62—Capacitors having potential barriers
- H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
- H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
- H10D84/0128—Manufacturing their channels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
- H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
- H10D84/212—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only capacitors
- H10D84/217—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only capacitors of only conductor-insulator-semiconductor capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/84—Combinations of enhancement-mode IGFETs and depletion-mode IGFETs
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
- H03M1/00—Analogue/digital conversion; Digital/analogue conversion
- H03M1/12—Analogue/digital converters
- H03M1/34—Analogue value compared with reference values
- H03M1/38—Analogue value compared with reference values sequentially only, e.g. successive approximation type
- H03M1/44—Sequential comparisons in series-connected stages with change in value of analogue signal
Landscapes
- Analogue/Digital Conversion (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8102663A FR2499766A1 (en) | 1981-02-11 | 1981-02-11 | NMOS integrated circuit capacitors using poly-silicon gates - uses auxiliary ion implant for capacitors and auto alignment diffusion for telephone analogue=to=digital converter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8102663A FR2499766A1 (en) | 1981-02-11 | 1981-02-11 | NMOS integrated circuit capacitors using poly-silicon gates - uses auxiliary ion implant for capacitors and auto alignment diffusion for telephone analogue=to=digital converter |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2499766A1 true FR2499766A1 (en) | 1982-08-13 |
| FR2499766B1 FR2499766B1 (enExample) | 1984-02-17 |
Family
ID=9255075
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR8102663A Granted FR2499766A1 (en) | 1981-02-11 | 1981-02-11 | NMOS integrated circuit capacitors using poly-silicon gates - uses auxiliary ion implant for capacitors and auto alignment diffusion for telephone analogue=to=digital converter |
Country Status (1)
| Country | Link |
|---|---|
| FR (1) | FR2499766A1 (enExample) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0130466A3 (en) * | 1983-06-27 | 1987-10-28 | Motorola, Inc. | A capacitive digital to analog converter which can be trimmed |
| EP0290857A1 (en) * | 1987-05-15 | 1988-11-17 | International Business Machines Corporation | A bias device for achieving voltage independent capacitance |
| EP0263287A3 (en) * | 1986-09-29 | 1989-10-11 | International Business Machines Corporation | Forming a capacitor in an integrated circuit |
| US5610089A (en) * | 1983-12-26 | 1997-03-11 | Hitachi, Ltd. | Method of fabrication of semiconductor integrated circuit device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4183040A (en) * | 1976-02-09 | 1980-01-08 | International Business Machines Corporation | MOS RAM with implant forming peripheral depletion MOSFET channels and capacitor bottom electrodes |
| US4240092A (en) * | 1976-09-13 | 1980-12-16 | Texas Instruments Incorporated | Random access memory cell with different capacitor and transistor oxide thickness |
-
1981
- 1981-02-11 FR FR8102663A patent/FR2499766A1/fr active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4183040A (en) * | 1976-02-09 | 1980-01-08 | International Business Machines Corporation | MOS RAM with implant forming peripheral depletion MOSFET channels and capacitor bottom electrodes |
| US4240092A (en) * | 1976-09-13 | 1980-12-16 | Texas Instruments Incorporated | Random access memory cell with different capacitor and transistor oxide thickness |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0130466A3 (en) * | 1983-06-27 | 1987-10-28 | Motorola, Inc. | A capacitive digital to analog converter which can be trimmed |
| US5610089A (en) * | 1983-12-26 | 1997-03-11 | Hitachi, Ltd. | Method of fabrication of semiconductor integrated circuit device |
| EP0263287A3 (en) * | 1986-09-29 | 1989-10-11 | International Business Machines Corporation | Forming a capacitor in an integrated circuit |
| EP0290857A1 (en) * | 1987-05-15 | 1988-11-17 | International Business Machines Corporation | A bias device for achieving voltage independent capacitance |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2499766B1 (enExample) | 1984-02-17 |
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