FR2499766B1 - - Google Patents

Info

Publication number
FR2499766B1
FR2499766B1 FR8102663A FR8102663A FR2499766B1 FR 2499766 B1 FR2499766 B1 FR 2499766B1 FR 8102663 A FR8102663 A FR 8102663A FR 8102663 A FR8102663 A FR 8102663A FR 2499766 B1 FR2499766 B1 FR 2499766B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8102663A
Other languages
French (fr)
Other versions
FR2499766A1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments France SAS
Original Assignee
Texas Instruments France SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments France SAS filed Critical Texas Instruments France SAS
Priority to FR8102663A priority Critical patent/FR2499766A1/fr
Publication of FR2499766A1 publication Critical patent/FR2499766A1/fr
Application granted granted Critical
Publication of FR2499766B1 publication Critical patent/FR2499766B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0128—Manufacturing their channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/212—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only capacitors
    • H10D84/217—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only capacitors of only conductor-insulator-semiconductor capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/84—Combinations of enhancement-mode IGFETs and depletion-mode IGFETs
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M1/00—Analogue/digital conversion; Digital/analogue conversion
    • H03M1/12—Analogue/digital converters
    • H03M1/34—Analogue value compared with reference values
    • H03M1/38—Analogue value compared with reference values sequentially only, e.g. successive approximation type
    • H03M1/44—Sequential comparisons in series-connected stages with change in value of analogue signal
FR8102663A 1981-02-11 1981-02-11 NMOS integrated circuit capacitors using poly-silicon gates - uses auxiliary ion implant for capacitors and auto alignment diffusion for telephone analogue=to=digital converter Granted FR2499766A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR8102663A FR2499766A1 (en) 1981-02-11 1981-02-11 NMOS integrated circuit capacitors using poly-silicon gates - uses auxiliary ion implant for capacitors and auto alignment diffusion for telephone analogue=to=digital converter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8102663A FR2499766A1 (en) 1981-02-11 1981-02-11 NMOS integrated circuit capacitors using poly-silicon gates - uses auxiliary ion implant for capacitors and auto alignment diffusion for telephone analogue=to=digital converter

Publications (2)

Publication Number Publication Date
FR2499766A1 FR2499766A1 (en) 1982-08-13
FR2499766B1 true FR2499766B1 (enExample) 1984-02-17

Family

ID=9255075

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8102663A Granted FR2499766A1 (en) 1981-02-11 1981-02-11 NMOS integrated circuit capacitors using poly-silicon gates - uses auxiliary ion implant for capacitors and auto alignment diffusion for telephone analogue=to=digital converter

Country Status (1)

Country Link
FR (1) FR2499766A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4568917A (en) * 1983-06-27 1986-02-04 Motorola, Inc. Capacitive digital to analog converter which can be trimmed up and down
US5610089A (en) * 1983-12-26 1997-03-11 Hitachi, Ltd. Method of fabrication of semiconductor integrated circuit device
US4720467A (en) * 1986-09-29 1988-01-19 International Business Machines Corporation Method of forming a capacitor-transistor integrated circuit
US4786828A (en) * 1987-05-15 1988-11-22 Hoffman Charles R Bias scheme for achieving voltage independent capacitance

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4240092A (en) * 1976-09-13 1980-12-16 Texas Instruments Incorporated Random access memory cell with different capacitor and transistor oxide thickness
US4183040A (en) * 1976-02-09 1980-01-08 International Business Machines Corporation MOS RAM with implant forming peripheral depletion MOSFET channels and capacitor bottom electrodes

Also Published As

Publication number Publication date
FR2499766A1 (en) 1982-08-13

Similar Documents

Publication Publication Date Title
US4399426B1 (enExample)
FR2504128B1 (enExample)
FR2502202B1 (enExample)
FR2501436B1 (enExample)
FR2501090B3 (enExample)
FR2498471B3 (enExample)
FR2500315B3 (enExample)
FR2500571B3 (enExample)
FR2501542B1 (enExample)
FR2503831B1 (enExample)
FR2498256B1 (enExample)
FR2502087B1 (enExample)
FR2503011B1 (enExample)
FR2498139B1 (enExample)
FR2500560B1 (enExample)
FR2502358B1 (enExample)
FR2497932B3 (enExample)
FR2504812B1 (enExample)
FR2499766B1 (enExample)
FR2498532B1 (enExample)
FR2500588B1 (enExample)
FR2498137B3 (enExample)
FR2500583B3 (enExample)
FR2498515B1 (enExample)
FR2503670B1 (enExample)