FR2496993A1 - Condensateur variable - Google Patents

Condensateur variable Download PDF

Info

Publication number
FR2496993A1
FR2496993A1 FR8123598A FR8123598A FR2496993A1 FR 2496993 A1 FR2496993 A1 FR 2496993A1 FR 8123598 A FR8123598 A FR 8123598A FR 8123598 A FR8123598 A FR 8123598A FR 2496993 A1 FR2496993 A1 FR 2496993A1
Authority
FR
France
Prior art keywords
dielectric layer
section
mass
capacitor according
capacity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR8123598A
Other languages
English (en)
French (fr)
Other versions
FR2496993B1 (https=
Inventor
Takamasa Sakai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Faurecia Clarion Electronics Co Ltd
Original Assignee
Clarion Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Clarion Co Ltd filed Critical Clarion Co Ltd
Publication of FR2496993A1 publication Critical patent/FR2496993A1/fr
Application granted granted Critical
Publication of FR2496993B1 publication Critical patent/FR2496993B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/64—Variable-capacitance diodes, e.g. varactors 

Landscapes

  • Semiconductor Integrated Circuits (AREA)
FR8123598A 1980-12-18 1981-12-17 Condensateur variable Granted FR2496993A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55180061A JPS57103368A (en) 1980-12-18 1980-12-18 Variable-capacitance device

Publications (2)

Publication Number Publication Date
FR2496993A1 true FR2496993A1 (fr) 1982-06-25
FR2496993B1 FR2496993B1 (https=) 1984-05-04

Family

ID=16076792

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8123598A Granted FR2496993A1 (fr) 1980-12-18 1981-12-17 Condensateur variable

Country Status (4)

Country Link
JP (1) JPS57103368A (https=)
DE (1) DE3150057A1 (https=)
FR (1) FR2496993A1 (https=)
GB (1) GB2092375B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2509093A1 (fr) * 1981-07-03 1983-01-07 Clarion Co Ltd Condensateur variable

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090050999A1 (en) * 2007-08-21 2009-02-26 Western Lights Semiconductor Corp. Apparatus for storing electrical energy
US10615294B2 (en) 2018-06-13 2020-04-07 Qualcomm Incorporated Variable capacitor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3009499A1 (de) * 1979-03-12 1980-09-18 Clarion Co Ltd Halbleitervorrichtung

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55120177A (en) * 1979-03-12 1980-09-16 Clarion Co Ltd Variable capacitance diode with plural electrode structures

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3009499A1 (de) * 1979-03-12 1980-09-18 Clarion Co Ltd Halbleitervorrichtung

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2509093A1 (fr) * 1981-07-03 1983-01-07 Clarion Co Ltd Condensateur variable

Also Published As

Publication number Publication date
GB2092375B (en) 1985-04-24
FR2496993B1 (https=) 1984-05-04
GB2092375A (en) 1982-08-11
JPS57103368A (en) 1982-06-26
DE3150057A1 (de) 1982-08-05

Similar Documents

Publication Publication Date Title
US5168069A (en) Ultra-high-speed photoconductive devices using semi-insulating layers
FR2600821A1 (fr) Dispositif semi-conducteur a heterojonction et double canal, son application a un transistor a effet de champ, et son application a un dispositif de transductance negative
FR2557727A1 (fr) Transistor a effet de champ en arseniure de gallium a grille isole et mode inverse
FR2495382A1 (fr) Dispositif redresseur commande par effet de champ
US5332918A (en) Ultra-high-speed photoconductive devices using semi-insulating layers
FR2744835A1 (fr) Circuit integre de puissance haute tension avec fonctionnement a decalage de niveau et sans traversee metallique
FR2513011A1 (fr) Procede de fabrication de contacts a faible resistance dans des dispositifs a semi-conducteur
FR2691839A1 (fr) Capteur à Effet Hall.
FR2764118A1 (fr) Transistor bipolaire stabilise avec elements isolants electriques
FR2496991A1 (fr) Condensateur variable
FR2576711A1 (fr) Transistor a effet de champ a heterojonction
FR2598259A1 (fr) Diode zener enterree et procede de fabrication.
EP0461967A2 (fr) Composant semiconducteur à jonction Schottky pour amplification hyperfréquence et circuits logiques rapides, et procédé de réalisation d'un tel composant
FR2481518A1 (fr) Procede de realisation d'un dispositif semiconducteur comportant des transistors a effet de champ complementaires
FR2468208A1 (fr) Dispositif semiconducteur avec une diode zener
EP0522952B1 (fr) Transistor à effet de champ, à couches minces de barrière et couche mince dopée
CA2400768A1 (fr) Dispositif optoelectronique semiconducteur a fonction de transfert modulable electriquement
FR2496993A1 (fr) Condensateur variable
FR2745421A1 (fr) Mesfet du type enrichissement
FR2496990A1 (fr) Transistor a effet de champ a barriere schottky
FR2489045A1 (fr) Transistor a effet de champ gaas a memoire non volatile
FR2545989A1 (fr) Transistor a effet de champ, fonctionnant en regime d'enrichissement
EP0913002A1 (fr) Detecteur infrarouge bicolore a coherence spatio-temporelle planaire
EP0204387A1 (fr) Dispositif semiconducteur pour la réalisation des capacités de découplage placées entre l'alimentation et la masse des circuits intégrés
Jones et al. Effect of device processing on 1/f noise in uncooled, Auger-suppressed CdHgTe diodes

Legal Events

Date Code Title Description
DL Decision of the director general to leave to make available licences of right
ST Notification of lapse