FR2495850A1 - Laser a semiconducteur a grande longueur d'onde - Google Patents
Laser a semiconducteur a grande longueur d'onde Download PDFInfo
- Publication number
- FR2495850A1 FR2495850A1 FR8025911A FR8025911A FR2495850A1 FR 2495850 A1 FR2495850 A1 FR 2495850A1 FR 8025911 A FR8025911 A FR 8025911A FR 8025911 A FR8025911 A FR 8025911A FR 2495850 A1 FR2495850 A1 FR 2495850A1
- Authority
- FR
- France
- Prior art keywords
- layer
- active layer
- layers
- alloy
- confinement
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 239000000463 material Substances 0.000 claims abstract description 16
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 15
- 239000000956 alloy Substances 0.000 claims abstract description 15
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims abstract 2
- 238000000407 epitaxy Methods 0.000 claims description 3
- 210000000695 crystalline len Anatomy 0.000 claims 1
- 239000000203 mixture Substances 0.000 abstract description 12
- 229910002059 quaternary alloy Inorganic materials 0.000 abstract description 8
- 230000000694 effects Effects 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 10
- 229910052733 gallium Inorganic materials 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 229910052785 arsenic Inorganic materials 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 5
- 229910052738 indium Inorganic materials 0.000 description 5
- 229910002058 ternary alloy Inorganic materials 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- 239000013307 optical fiber Substances 0.000 description 3
- 229910005542 GaSb Inorganic materials 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- -1 InP compound Chemical class 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910002056 binary alloy Inorganic materials 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000013139 quantization Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8025911A FR2495850A1 (fr) | 1980-12-05 | 1980-12-05 | Laser a semiconducteur a grande longueur d'onde |
| US06/326,555 US4430740A (en) | 1980-12-05 | 1981-12-02 | Long-wavelength semiconductor laser |
| JP56195523A JPS57121291A (en) | 1980-12-05 | 1981-12-03 | Long wavelength semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8025911A FR2495850A1 (fr) | 1980-12-05 | 1980-12-05 | Laser a semiconducteur a grande longueur d'onde |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2495850A1 true FR2495850A1 (fr) | 1982-06-11 |
| FR2495850B1 FR2495850B1 (enExample) | 1983-01-07 |
Family
ID=9248747
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR8025911A Granted FR2495850A1 (fr) | 1980-12-05 | 1980-12-05 | Laser a semiconducteur a grande longueur d'onde |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US4430740A (enExample) |
| JP (1) | JPS57121291A (enExample) |
| FR (1) | FR2495850A1 (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01273379A (ja) * | 1988-04-26 | 1989-11-01 | Sony Corp | 長波長発光半導体レーザー |
| DE3838016A1 (de) * | 1988-11-09 | 1990-05-10 | Siemens Ag | Halbleiterlaser im system gaa1inas |
| JP2553731B2 (ja) * | 1990-04-13 | 1996-11-13 | 三菱電機株式会社 | 半導体光素子 |
| US5079774A (en) * | 1990-12-27 | 1992-01-07 | International Business Machines Corporation | Polarization-tunable optoelectronic devices |
| JPH0558205U (ja) * | 1992-01-17 | 1993-08-03 | 親和工業株式会社 | い草の加湿装置 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2025123A (en) * | 1978-06-30 | 1980-01-16 | Hitachi Ltd | Semiconductor laser device and method of manufacturing thesame |
| US4207122A (en) * | 1978-01-11 | 1980-06-10 | International Standard Electric Corporation | Infra-red light emissive devices |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5627987A (en) | 1979-08-15 | 1981-03-18 | Kokusai Denshin Denwa Co Ltd <Kdd> | Semiconductor laser |
-
1980
- 1980-12-05 FR FR8025911A patent/FR2495850A1/fr active Granted
-
1981
- 1981-12-02 US US06/326,555 patent/US4430740A/en not_active Expired - Fee Related
- 1981-12-03 JP JP56195523A patent/JPS57121291A/ja active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4207122A (en) * | 1978-01-11 | 1980-06-10 | International Standard Electric Corporation | Infra-red light emissive devices |
| GB2025123A (en) * | 1978-06-30 | 1980-01-16 | Hitachi Ltd | Semiconductor laser device and method of manufacturing thesame |
Non-Patent Citations (2)
| Title |
|---|
| EXBK/76 * |
| EXBK/77 * |
Also Published As
| Publication number | Publication date |
|---|---|
| US4430740A (en) | 1984-02-07 |
| JPS57121291A (en) | 1982-07-28 |
| FR2495850B1 (enExample) | 1983-01-07 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |