FR2495850B1 - - Google Patents

Info

Publication number
FR2495850B1
FR2495850B1 FR8025911A FR8025911A FR2495850B1 FR 2495850 B1 FR2495850 B1 FR 2495850B1 FR 8025911 A FR8025911 A FR 8025911A FR 8025911 A FR8025911 A FR 8025911A FR 2495850 B1 FR2495850 B1 FR 2495850B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8025911A
Other languages
French (fr)
Other versions
FR2495850A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR8025911A priority Critical patent/FR2495850A1/fr
Priority to US06/326,555 priority patent/US4430740A/en
Priority to JP56195523A priority patent/JPS57121291A/ja
Publication of FR2495850A1 publication Critical patent/FR2495850A1/fr
Application granted granted Critical
Publication of FR2495850B1 publication Critical patent/FR2495850B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
FR8025911A 1980-12-05 1980-12-05 Laser a semiconducteur a grande longueur d'onde Granted FR2495850A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR8025911A FR2495850A1 (fr) 1980-12-05 1980-12-05 Laser a semiconducteur a grande longueur d'onde
US06/326,555 US4430740A (en) 1980-12-05 1981-12-02 Long-wavelength semiconductor laser
JP56195523A JPS57121291A (en) 1980-12-05 1981-12-03 Long wavelength semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8025911A FR2495850A1 (fr) 1980-12-05 1980-12-05 Laser a semiconducteur a grande longueur d'onde

Publications (2)

Publication Number Publication Date
FR2495850A1 FR2495850A1 (fr) 1982-06-11
FR2495850B1 true FR2495850B1 (enExample) 1983-01-07

Family

ID=9248747

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8025911A Granted FR2495850A1 (fr) 1980-12-05 1980-12-05 Laser a semiconducteur a grande longueur d'onde

Country Status (3)

Country Link
US (1) US4430740A (enExample)
JP (1) JPS57121291A (enExample)
FR (1) FR2495850A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01273379A (ja) * 1988-04-26 1989-11-01 Sony Corp 長波長発光半導体レーザー
DE3838016A1 (de) * 1988-11-09 1990-05-10 Siemens Ag Halbleiterlaser im system gaa1inas
JP2553731B2 (ja) * 1990-04-13 1996-11-13 三菱電機株式会社 半導体光素子
US5079774A (en) * 1990-12-27 1992-01-07 International Business Machines Corporation Polarization-tunable optoelectronic devices
JPH0558205U (ja) * 1992-01-17 1993-08-03 親和工業株式会社 い草の加湿装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4207122A (en) * 1978-01-11 1980-06-10 International Standard Electric Corporation Infra-red light emissive devices
JPS5522807A (en) * 1978-06-30 1980-02-18 Hitachi Ltd Semiconductor laser element and manufacturing of the same
JPS5627987A (en) 1979-08-15 1981-03-18 Kokusai Denshin Denwa Co Ltd <Kdd> Semiconductor laser

Also Published As

Publication number Publication date
FR2495850A1 (fr) 1982-06-11
US4430740A (en) 1984-02-07
JPS57121291A (en) 1982-07-28

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Legal Events

Date Code Title Description
ST Notification of lapse