JPS57121291A - Long wavelength semiconductor laser - Google Patents

Long wavelength semiconductor laser

Info

Publication number
JPS57121291A
JPS57121291A JP56195523A JP19552381A JPS57121291A JP S57121291 A JPS57121291 A JP S57121291A JP 56195523 A JP56195523 A JP 56195523A JP 19552381 A JP19552381 A JP 19552381A JP S57121291 A JPS57121291 A JP S57121291A
Authority
JP
Japan
Prior art keywords
semiconductor laser
long wavelength
wavelength semiconductor
long
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56195523A
Other languages
English (en)
Japanese (ja)
Inventor
Dou Kuremu Boodowan
Rin Niyuien Toron
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Publication of JPS57121291A publication Critical patent/JPS57121291A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP56195523A 1980-12-05 1981-12-03 Long wavelength semiconductor laser Pending JPS57121291A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8025911A FR2495850A1 (fr) 1980-12-05 1980-12-05 Laser a semiconducteur a grande longueur d'onde

Publications (1)

Publication Number Publication Date
JPS57121291A true JPS57121291A (en) 1982-07-28

Family

ID=9248747

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56195523A Pending JPS57121291A (en) 1980-12-05 1981-12-03 Long wavelength semiconductor laser

Country Status (3)

Country Link
US (1) US4430740A (enExample)
JP (1) JPS57121291A (enExample)
FR (1) FR2495850A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01273379A (ja) * 1988-04-26 1989-11-01 Sony Corp 長波長発光半導体レーザー
JPH0558205U (ja) * 1992-01-17 1993-08-03 親和工業株式会社 い草の加湿装置

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3838016A1 (de) * 1988-11-09 1990-05-10 Siemens Ag Halbleiterlaser im system gaa1inas
JP2553731B2 (ja) * 1990-04-13 1996-11-13 三菱電機株式会社 半導体光素子
US5079774A (en) * 1990-12-27 1992-01-07 International Business Machines Corporation Polarization-tunable optoelectronic devices

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4207122A (en) * 1978-01-11 1980-06-10 International Standard Electric Corporation Infra-red light emissive devices
JPS5522807A (en) * 1978-06-30 1980-02-18 Hitachi Ltd Semiconductor laser element and manufacturing of the same
JPS5627987A (en) 1979-08-15 1981-03-18 Kokusai Denshin Denwa Co Ltd <Kdd> Semiconductor laser

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01273379A (ja) * 1988-04-26 1989-11-01 Sony Corp 長波長発光半導体レーザー
JPH0558205U (ja) * 1992-01-17 1993-08-03 親和工業株式会社 い草の加湿装置

Also Published As

Publication number Publication date
FR2495850A1 (fr) 1982-06-11
US4430740A (en) 1984-02-07
FR2495850B1 (enExample) 1983-01-07

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