FR2492165B1 - - Google Patents

Info

Publication number
FR2492165B1
FR2492165B1 FR8010842A FR8010842A FR2492165B1 FR 2492165 B1 FR2492165 B1 FR 2492165B1 FR 8010842 A FR8010842 A FR 8010842A FR 8010842 A FR8010842 A FR 8010842A FR 2492165 B1 FR2492165 B1 FR 2492165B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8010842A
Other languages
French (fr)
Other versions
FR2492165A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=9241989&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=FR2492165(B1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR8010842A priority Critical patent/FR2492165A1/fr
Priority to EP81400665A priority patent/EP0040125B1/fr
Priority to DE8181400665T priority patent/DE3161536D1/de
Priority to US06/263,203 priority patent/US4466011A/en
Publication of FR2492165A1 publication Critical patent/FR2492165A1/fr
Application granted granted Critical
Publication of FR2492165B1 publication Critical patent/FR2492165B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/114—PN junction isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/63—Combinations of vertical and lateral BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/031—Manufacture or treatment of isolation regions comprising PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/30—Isolation regions comprising PN junctions
FR8010842A 1980-05-14 1980-05-14 Dispositif de protection contre les courants de fuite dans des circuits integres Granted FR2492165A1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR8010842A FR2492165A1 (fr) 1980-05-14 1980-05-14 Dispositif de protection contre les courants de fuite dans des circuits integres
EP81400665A EP0040125B1 (fr) 1980-05-14 1981-04-28 Dispositif de protection contre les courants de fuite dans des circuits intégrés
DE8181400665T DE3161536D1 (en) 1980-05-14 1981-04-28 Protection device against parasitic currents in integrated circuits
US06/263,203 US4466011A (en) 1980-05-14 1981-05-13 Device for protection against leakage currents in integrated circuits

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8010842A FR2492165A1 (fr) 1980-05-14 1980-05-14 Dispositif de protection contre les courants de fuite dans des circuits integres

Publications (2)

Publication Number Publication Date
FR2492165A1 FR2492165A1 (fr) 1982-04-16
FR2492165B1 true FR2492165B1 (online.php) 1984-05-04

Family

ID=9241989

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8010842A Granted FR2492165A1 (fr) 1980-05-14 1980-05-14 Dispositif de protection contre les courants de fuite dans des circuits integres

Country Status (4)

Country Link
US (1) US4466011A (online.php)
EP (1) EP0040125B1 (online.php)
DE (1) DE3161536D1 (online.php)
FR (1) FR2492165A1 (online.php)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3276513D1 (en) * 1982-11-26 1987-07-09 Ibm Self-biased resistor structure and application to interface circuits realization
IT1231894B (it) * 1987-10-15 1992-01-15 Sgs Microelettronica Spa Dispositivo integrato per schermare l'iniezione di cariche nel substrato.
IT1232930B (it) * 1987-10-30 1992-03-10 Sgs Microelettronica Spa Struttura integrata a componenti attivi e passivi inclusi in sacche di isolamento operante a tensione maggiore della tensione di rottura tra ciascun componente e la sacca che lo contiene
FR2624320B1 (fr) * 1987-12-02 1990-05-18 Equip Electr Moteur Regulateur monolithique de tension de charge de batterie par un alternateur protege contre les tensions parasites
DE3924278A1 (de) * 1988-08-10 1990-02-15 Bosch Gmbh Robert Elektronisches, monolithisch integriertes geraet
IT1231541B (it) * 1989-07-25 1991-12-17 Sgs Thomson Microelectronics Dispositivo di protezione contro gli effetti parassiti provocati da impulsi negativi di tensione di alimentazione in circuiti integrati monolitici includenti un dispositivo di potenza per il pilotaggio di un carico induttivo ed un dispositivo di controllo per detto dispositivo di potenza.
IT1236797B (it) * 1989-11-17 1993-04-02 St Microelectronics Srl Dispositivo monolitico di potenza a semiconduttore di tipo verticale con una protezione contro le correnti parassite.
JPH03203265A (ja) * 1989-12-28 1991-09-04 Sony Corp 半導体装置
DE69131441T2 (de) * 1990-04-13 1999-12-16 Kabushiki Kaisha Toshiba, Kawasaki Methode zur Verhinderung von einer Spannungsschwankung in einem Halbleiterbauelement
US5148099A (en) * 1991-04-01 1992-09-15 Motorola, Inc. Radiation hardened bandgap reference voltage generator and method
DE4133245C2 (de) * 1991-10-08 2001-09-20 Bosch Gmbh Robert Bipolare monolithisch integrierte Schaltung
DE4209523C1 (online.php) * 1992-03-24 1993-03-11 Siemens Ag, 8000 Muenchen, De
US5243214A (en) * 1992-04-14 1993-09-07 North American Philips Corp. Power integrated circuit with latch-up prevention
JP3252569B2 (ja) * 1993-11-09 2002-02-04 株式会社デンソー 絶縁分離基板及びそれを用いた半導体装置及びその製造方法
US5514901A (en) * 1994-05-17 1996-05-07 Allegro Microsystems, Inc. Epitaxial island with adjacent asymmetrical structure to reduce collection of injected current from the island into other islands
US5545917A (en) * 1994-05-17 1996-08-13 Allegro Microsystems, Inc. Separate protective transistor
US5834826A (en) * 1997-05-08 1998-11-10 Stmicroelectronics, Inc. Protection against adverse parasitic effects in junction-isolated integrated circuits
WO2003005449A1 (en) * 2001-07-03 2003-01-16 Tripath Technology, Inc. Substrate connection in an integrated power circuit
JP2003229502A (ja) * 2002-02-01 2003-08-15 Mitsubishi Electric Corp 半導体装置
US20040053439A1 (en) * 2002-09-17 2004-03-18 Infineon Technologies North America Corp. Method for producing low-resistance ohmic contacts between substrates and wells in CMOS integrated circuits
US6747294B1 (en) 2002-09-25 2004-06-08 Polarfab Llc Guard ring structure for reducing crosstalk and latch-up in integrated circuits
DE10314151B4 (de) * 2003-03-28 2008-04-24 Infineon Technologies Ag Halbleiterbauelementeanordnung und Verfahren zur Kompensation parasitärer Ströme
CA2533225C (en) * 2006-01-19 2016-03-22 Technologies Ltrim Inc. A tunable semiconductor component provided with a current barrier
US7411271B1 (en) * 2007-01-19 2008-08-12 Episil Technologies Inc. Complementary metal-oxide-semiconductor field effect transistor
US7538396B2 (en) * 2007-01-19 2009-05-26 Episil Technologies Inc. Semiconductor device and complementary metal-oxide-semiconductor field effect transistor
US7514754B2 (en) * 2007-01-19 2009-04-07 Episil Technologies Inc. Complementary metal-oxide-semiconductor transistor for avoiding a latch-up problem
US7700405B2 (en) * 2007-02-28 2010-04-20 Freescale Semiconductor, Inc. Microelectronic assembly with improved isolation voltage performance and a method for forming the same
US9478607B2 (en) 2014-09-11 2016-10-25 Semiconductor Components Industries, Llc Electronic device including an isolation structure

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1510057A (fr) 1966-12-06 1968-01-19 Csf Transistors intégrés complémentaires npn et pnp à collecteurs isolés
US4044373A (en) * 1967-11-13 1977-08-23 Hitachi, Ltd. IGFET with gate protection diode and antiparasitic isolation means
NL161923C (nl) * 1969-04-18 1980-03-17 Philips Nv Halfgeleiderinrichting.
US3590345A (en) * 1969-06-25 1971-06-29 Westinghouse Electric Corp Double wall pn junction isolation for monolithic integrated circuit components
CH506889A (de) * 1970-07-24 1971-04-30 Foerderung Forschung Gmbh Integrierter Schaltkreis
DE2055661A1 (de) * 1970-11-12 1972-06-29 Itt Ind Gmbh Deutsche Monolithisch integrierte Festkörperschaltung
US3878551A (en) * 1971-11-30 1975-04-15 Texas Instruments Inc Semiconductor integrated circuits having improved electrical isolation characteristics
US3931634A (en) * 1973-06-14 1976-01-06 Rca Corporation Junction-isolated monolithic integrated circuit device with means for preventing parasitic transistor action
US3940785A (en) * 1974-05-06 1976-02-24 Sprague Electric Company Semiconductor I.C. with protection against reversed power supply
US4027325A (en) * 1975-01-30 1977-05-31 Sprague Electric Company Integrated full wave diode bridge rectifier
FR2303382A1 (fr) * 1975-03-07 1976-10-01 Nat Semiconductor Corp Circuit integre a region epitaxiale intermediaire separant des regions epitaxiales d'entree et de sortie

Also Published As

Publication number Publication date
FR2492165A1 (fr) 1982-04-16
EP0040125A1 (fr) 1981-11-18
DE3161536D1 (en) 1984-01-05
EP0040125B1 (fr) 1983-11-30
US4466011A (en) 1984-08-14

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Legal Events

Date Code Title Description
ST Notification of lapse