FR2488048A1 - Detecteur photovoltaique sensible dans l'infrarouge proche - Google Patents
Detecteur photovoltaique sensible dans l'infrarouge proche Download PDFInfo
- Publication number
- FR2488048A1 FR2488048A1 FR8016788A FR8016788A FR2488048A1 FR 2488048 A1 FR2488048 A1 FR 2488048A1 FR 8016788 A FR8016788 A FR 8016788A FR 8016788 A FR8016788 A FR 8016788A FR 2488048 A1 FR2488048 A1 FR 2488048A1
- Authority
- FR
- France
- Prior art keywords
- substrate
- detector
- type
- zone
- photovoltaic detector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 230000003595 spectral effect Effects 0.000 claims abstract description 8
- 230000035945 sensitivity Effects 0.000 claims abstract description 6
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims description 7
- 229910052753 mercury Inorganic materials 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
- 238000002513 implantation Methods 0.000 claims 1
- 239000013307 optical fiber Substances 0.000 abstract description 3
- 238000001514 detection method Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 7
- 229910052793 cadmium Inorganic materials 0.000 description 3
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 229910000645 Hg alloy Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
- H01L21/38—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions
- H01L21/383—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions using diffusion into or out of a solid from or into a gaseous phase
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/469—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers
- H01L21/471—Inorganic layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
- H10F71/1253—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe comprising at least three elements, e.g. HgCdTe
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
- Radiation Pyrometers (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8016788A FR2488048A1 (fr) | 1980-07-30 | 1980-07-30 | Detecteur photovoltaique sensible dans l'infrarouge proche |
| DE8181401195T DE3172767D1 (en) | 1980-07-30 | 1981-07-24 | Photovoltaic detector sensitive in the near infrared range |
| EP81401195A EP0045258B1 (fr) | 1980-07-30 | 1981-07-24 | Détecteur photovoltaique sensible dans l'infrarouge proche |
| JP56117911A JPS5753633A (en) | 1980-07-30 | 1981-07-29 | Photoelectromotive detector sensitive to near infrared region |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8016788A FR2488048A1 (fr) | 1980-07-30 | 1980-07-30 | Detecteur photovoltaique sensible dans l'infrarouge proche |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2488048A1 true FR2488048A1 (fr) | 1982-02-05 |
| FR2488048B1 FR2488048B1 (OSRAM) | 1983-12-23 |
Family
ID=9244702
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR8016788A Granted FR2488048A1 (fr) | 1980-07-30 | 1980-07-30 | Detecteur photovoltaique sensible dans l'infrarouge proche |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP0045258B1 (OSRAM) |
| JP (1) | JPS5753633A (OSRAM) |
| DE (1) | DE3172767D1 (OSRAM) |
| FR (1) | FR2488048A1 (OSRAM) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2501915A1 (fr) * | 1981-03-10 | 1982-09-17 | Telecommunications Sa | Photodetecteur sensible dans l'infra-rouge proche |
| FR2598558B1 (fr) * | 1986-05-07 | 1988-11-10 | Telecommunications Sa | Photodiode a avalanche hgcdte sensible aux rayonnements de longueur d'onde superieure a 2 mm |
| JP2798927B2 (ja) * | 1988-03-28 | 1998-09-17 | 株式会社東芝 | 半導体受光装置及びその製造方法 |
| EP0635892B1 (en) * | 1992-07-21 | 2002-06-26 | Raytheon Company | Bake-stable HgCdTe photodetector and method for fabricating same |
| GB9921639D0 (en) | 1999-09-15 | 1999-11-17 | Secr Defence Brit | New organotellurium compound and new method for synthesising organotellurium compounds |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2336804A1 (fr) * | 1975-12-23 | 1977-07-22 | Telecommunications Sa | Perfectionnements apportes aux dispositifs semi-conducteurs, notamment aux detecteurs photovoltaiques comprenant un substrat a base d'un alliage cdxhg1-xte, et procede de fabrication d'un tel dispositif perfectionne |
-
1980
- 1980-07-30 FR FR8016788A patent/FR2488048A1/fr active Granted
-
1981
- 1981-07-24 EP EP81401195A patent/EP0045258B1/fr not_active Expired
- 1981-07-24 DE DE8181401195T patent/DE3172767D1/de not_active Expired
- 1981-07-29 JP JP56117911A patent/JPS5753633A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2336804A1 (fr) * | 1975-12-23 | 1977-07-22 | Telecommunications Sa | Perfectionnements apportes aux dispositifs semi-conducteurs, notamment aux detecteurs photovoltaiques comprenant un substrat a base d'un alliage cdxhg1-xte, et procede de fabrication d'un tel dispositif perfectionne |
Non-Patent Citations (1)
| Title |
|---|
| EXBK/78 * |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0345331B2 (OSRAM) | 1991-07-10 |
| JPS5753633A (en) | 1982-03-30 |
| FR2488048B1 (OSRAM) | 1983-12-23 |
| EP0045258A3 (en) | 1982-02-17 |
| EP0045258B1 (fr) | 1985-10-30 |
| DE3172767D1 (en) | 1985-12-05 |
| EP0045258A2 (fr) | 1982-02-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| CL | Concession to grant licences | ||
| ST | Notification of lapse |