FR2487121B1 - - Google Patents

Info

Publication number
FR2487121B1
FR2487121B1 FR8113985A FR8113985A FR2487121B1 FR 2487121 B1 FR2487121 B1 FR 2487121B1 FR 8113985 A FR8113985 A FR 8113985A FR 8113985 A FR8113985 A FR 8113985A FR 2487121 B1 FR2487121 B1 FR 2487121B1
Authority
FR
France
Prior art keywords
molecular beam
group iii
molecular
source
group
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8113985A
Other languages
English (en)
French (fr)
Other versions
FR2487121A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Inc
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of FR2487121A1 publication Critical patent/FR2487121A1/fr
Application granted granted Critical
Publication of FR2487121B1 publication Critical patent/FR2487121B1/fr
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
    • C30B23/066—Heating of the material to be evaporated
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2907—Materials being Group IIIA-VA materials
    • H10P14/2909—Phosphides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2907—Materials being Group IIIA-VA materials
    • H10P14/2911—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3418—Phosphides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3421—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/36—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done before the formation of the materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/065—Gp III-V generic compounds-processing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/169—Vacuum deposition, e.g. including molecular beam epitaxy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
FR8113985A 1980-07-21 1981-07-17 Procede et dispositif de formation d'une couche semi-conductrice par depot par jet moleculaire Granted FR2487121A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/170,548 US4330360A (en) 1980-07-21 1980-07-21 Molecular beam deposition technique using gaseous sources of group V elements

Publications (2)

Publication Number Publication Date
FR2487121A1 FR2487121A1 (fr) 1982-01-22
FR2487121B1 true FR2487121B1 (Direct) 1985-03-01

Family

ID=22620302

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8113985A Granted FR2487121A1 (fr) 1980-07-21 1981-07-17 Procede et dispositif de formation d'une couche semi-conductrice par depot par jet moleculaire

Country Status (4)

Country Link
US (1) US4330360A (Direct)
JP (1) JPS5752127A (Direct)
FR (1) FR2487121A1 (Direct)
GB (1) GB2080271B (Direct)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4447276A (en) * 1981-06-15 1984-05-08 The Post Office Molecular beam epitaxy electrolytic dopant source
US4464342A (en) * 1982-05-14 1984-08-07 At&T Bell Laboratories Molecular beam epitaxy apparatus for handling phosphorus
US4508590A (en) * 1983-09-16 1985-04-02 Raphael Kaplan Method for the deposition of high-quality crystal epitaxial films of iron
US4518846A (en) * 1984-06-11 1985-05-21 International Business Machines Corporation Heater assembly for molecular beam epitaxy furnace
WO1986000756A1 (fr) * 1984-07-10 1986-01-30 Gesellschaft Zur Förderung Der Industrieorientiert Composant optoelectronique aux infrarouges
FR2572099B1 (fr) * 1984-10-24 1987-03-20 Comp Generale Electricite Generateur de jets moleculaires par craquage thermique pour la fabrication de semi-conducteurs par depot epitaxial
US4636268A (en) * 1984-11-30 1987-01-13 At&T Bell Laboratories Chemical beam deposition method utilizing alkyl compounds in a carrier gas
US4622083A (en) * 1985-03-11 1986-11-11 Texas Instruments Incorporated Molecular beam epitaxial process
US4824518A (en) * 1985-03-29 1989-04-25 Sharp Kabushiki Kaisha Method for the production of semiconductor devices
US4829022A (en) * 1985-12-09 1989-05-09 Nippon Telegraph And Telephone Corporation Method for forming thin films of compound semiconductors by flow rate modulation epitaxy
JPH0758687B2 (ja) * 1986-01-13 1995-06-21 住友電気工業株式会社 超高真空用反応性ガス加熱導入装置
US4829021A (en) * 1986-12-12 1989-05-09 Daido Sanso K.K. Process for vacuum chemical epitaxy
DE3715644A1 (de) * 1987-05-11 1988-12-01 Fraunhofer Ges Forschung Molekularstrahlepitaxieanlage
US4910167A (en) * 1987-11-13 1990-03-20 Kopin Corporation III-V Semiconductor growth initiation on silicon using TMG and TEG
JPH0647515B2 (ja) * 1988-12-08 1994-06-22 シャープ株式会社 化合物半導体エピタキシャル成長法
US4939102A (en) * 1989-01-17 1990-07-03 American Telephone And Telegraph Company Method of growing III-V semiconductor layers with high effective hole concentration
JPH0773737B2 (ja) * 1989-12-07 1995-08-09 川崎製鉄株式会社 形鋼の矯正方法及びその装置
FR2679929B1 (fr) * 1991-08-01 1993-10-22 Alcatel Alsthom Cie Gle Electric Procede et cellule d'effusion pour la formation de jets moleculaires.
JPH0653257A (ja) * 1992-06-05 1994-02-25 Nec Corp 不純物ドーピング方法及び不純物ドーピングによるキャリア濃度制御方法
JP3070021B2 (ja) * 1997-01-29 2000-07-24 日新電機株式会社 Ｓｉ用分子線セルと分子線エピタキシー装置
RU2132890C1 (ru) * 1997-12-09 1999-07-10 Закрытое акционерное общество "Полупроводниковые приборы" Способ получения эпитаксиальных структур нитридов элементов группы a3
US6890987B2 (en) * 2000-10-18 2005-05-10 Nanofilm, Ltd. Product for vapor deposition of films of amphiphilic molecules or polymers
US6610363B2 (en) 2000-10-18 2003-08-26 Nanofilm, Ltd. Composition with film forming alkylsilsesquioxane polymer and method for applying hydrophobic films to surfaces
US6650546B2 (en) 2001-02-27 2003-11-18 3Com Corporation Chip component assembly
US7060131B2 (en) * 2001-05-09 2006-06-13 Hrl Laboratories, Llc Epitaxy with compliant layers of group-V species
US20040198898A1 (en) * 2001-08-03 2004-10-07 Arora Pramod K. Method for vapor deposition of hydrophobic films on surfaces
US20030141178A1 (en) * 2002-01-30 2003-07-31 Applied Materials, Inc. Energizing gas for substrate processing with shockwaves
PL2264225T3 (pl) * 2009-06-18 2013-01-31 Riber Urządzenie do epitaksji z wiązek molekularnych, do wytwarzania płytek materiału półprzewodnikowego

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3915765A (en) * 1973-06-25 1975-10-28 Bell Telephone Labor Inc MBE technique for fabricating semiconductor devices having low series resistance
US3974002A (en) * 1974-06-10 1976-08-10 Bell Telephone Laboratories, Incorporated MBE growth: gettering contaminants and fabricating heterostructure junction lasers
FR2419585A1 (fr) * 1978-03-07 1979-10-05 Thomson Csf Procede d'obtention en phase gazeuse d'une couche epitaxiale de phosphure d'indium, et appareil d'application de ce procede

Also Published As

Publication number Publication date
FR2487121A1 (fr) 1982-01-22
US4330360A (en) 1982-05-18
JPS5752127A (en) 1982-03-27
GB2080271A (en) 1982-02-03
GB2080271B (en) 1983-12-14

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