FR2480505A1 - Transistor a effet de champ a jonction de puissance a fonctionnement vertical et procede de fabrication - Google Patents

Transistor a effet de champ a jonction de puissance a fonctionnement vertical et procede de fabrication Download PDF

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Publication number
FR2480505A1
FR2480505A1 FR8008277A FR8008277A FR2480505A1 FR 2480505 A1 FR2480505 A1 FR 2480505A1 FR 8008277 A FR8008277 A FR 8008277A FR 8008277 A FR8008277 A FR 8008277A FR 2480505 A1 FR2480505 A1 FR 2480505A1
Authority
FR
France
Prior art keywords
layer
grooves
type
substrate
face
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR8008277A
Other languages
English (en)
French (fr)
Other versions
FR2480505B1 (OSRAM
Inventor
Jacques Arnould
Eugene Tonnel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR8008277A priority Critical patent/FR2480505A1/fr
Priority to EP81400540A priority patent/EP0038248A1/fr
Priority to JP5513981A priority patent/JPS56158483A/ja
Publication of FR2480505A1 publication Critical patent/FR2480505A1/fr
Application granted granted Critical
Publication of FR2480505B1 publication Critical patent/FR2480505B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/343—Gate regions of field-effect devices having PN junction gates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28525—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising semiconducting material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30608—Anisotropic liquid etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
FR8008277A 1980-04-14 1980-04-14 Transistor a effet de champ a jonction de puissance a fonctionnement vertical et procede de fabrication Granted FR2480505A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR8008277A FR2480505A1 (fr) 1980-04-14 1980-04-14 Transistor a effet de champ a jonction de puissance a fonctionnement vertical et procede de fabrication
EP81400540A EP0038248A1 (fr) 1980-04-14 1981-04-03 Transistor à effet de champ à jonction de puissance à fonctionnement vertical, et procédé de fabrication
JP5513981A JPS56158483A (en) 1980-04-14 1981-04-14 Field effect power transistor and method of manufacturing same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8008277A FR2480505A1 (fr) 1980-04-14 1980-04-14 Transistor a effet de champ a jonction de puissance a fonctionnement vertical et procede de fabrication

Publications (2)

Publication Number Publication Date
FR2480505A1 true FR2480505A1 (fr) 1981-10-16
FR2480505B1 FR2480505B1 (OSRAM) 1984-05-25

Family

ID=9240815

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8008277A Granted FR2480505A1 (fr) 1980-04-14 1980-04-14 Transistor a effet de champ a jonction de puissance a fonctionnement vertical et procede de fabrication

Country Status (3)

Country Link
EP (1) EP0038248A1 (OSRAM)
JP (1) JPS56158483A (OSRAM)
FR (1) FR2480505A1 (OSRAM)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0059264A1 (en) * 1981-03-02 1982-09-08 Rockwell International Corporation NPN Type lateral transistor with minimal substrate operation interference and method for producing same
CH670173A5 (OSRAM) * 1986-06-03 1989-05-12 Bbc Brown Boveri & Cie
JP2001118927A (ja) * 1999-10-22 2001-04-27 Mitsubishi Electric Corp 半導体装置およびその製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2379913A1 (fr) * 1977-02-02 1978-09-01 Zaidan Hojin Handotai Kenkyu Semi-conducteur a caracteristique i-v non sature et circuit integre comportant un tel semi-conducteur

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49134282A (OSRAM) * 1973-04-25 1974-12-24
US4181542A (en) * 1976-10-25 1980-01-01 Nippon Gakki Seizo Kabushiki Kaisha Method of manufacturing junction field effect transistors
DE2807181C2 (de) * 1977-02-21 1985-11-28 Zaidan Hojin Handotai Kenkyu Shinkokai, Sendai, Miyagi Halbleiterspeichervorrichtung
JPS53147481A (en) * 1977-05-27 1978-12-22 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device and production of the same
US4364072A (en) * 1978-03-17 1982-12-14 Zaidan Hojin Handotai Kenkyu Shinkokai Static induction type semiconductor device with multiple doped layers for potential modification
GB2026237A (en) * 1978-07-19 1980-01-30 Texas Instruments Ltd Junction gate field effect transistors
US4256514A (en) * 1978-11-03 1981-03-17 International Business Machines Corporation Method for forming a narrow dimensioned region on a body

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2379913A1 (fr) * 1977-02-02 1978-09-01 Zaidan Hojin Handotai Kenkyu Semi-conducteur a caracteristique i-v non sature et circuit integre comportant un tel semi-conducteur

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
EXBK/79 *

Also Published As

Publication number Publication date
EP0038248A1 (fr) 1981-10-21
FR2480505B1 (OSRAM) 1984-05-25
JPS56158483A (en) 1981-12-07

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