FR2475296B1 - - Google Patents

Info

Publication number
FR2475296B1
FR2475296B1 FR8002247A FR8002247A FR2475296B1 FR 2475296 B1 FR2475296 B1 FR 2475296B1 FR 8002247 A FR8002247 A FR 8002247A FR 8002247 A FR8002247 A FR 8002247A FR 2475296 B1 FR2475296 B1 FR 2475296B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8002247A
Other languages
French (fr)
Other versions
FR2475296A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR8002247A priority Critical patent/FR2475296A1/fr
Publication of FR2475296A1 publication Critical patent/FR2475296A1/fr
Application granted granted Critical
Publication of FR2475296B1 publication Critical patent/FR2475296B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/413—Optical elements or arrangements directly associated or integrated with the devices, e.g. back reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/147—Shapes of bodies
FR8002247A 1980-02-01 1980-02-01 Photodiode a avalanche, a structure concave, son procede de fabrication, et tete de reception d'une liaison par fibres optiques utilisant une telle photodiode Granted FR2475296A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR8002247A FR2475296A1 (fr) 1980-02-01 1980-02-01 Photodiode a avalanche, a structure concave, son procede de fabrication, et tete de reception d'une liaison par fibres optiques utilisant une telle photodiode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8002247A FR2475296A1 (fr) 1980-02-01 1980-02-01 Photodiode a avalanche, a structure concave, son procede de fabrication, et tete de reception d'une liaison par fibres optiques utilisant une telle photodiode

Publications (2)

Publication Number Publication Date
FR2475296A1 FR2475296A1 (fr) 1981-08-07
FR2475296B1 true FR2475296B1 (enExample) 1981-12-31

Family

ID=9238115

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8002247A Granted FR2475296A1 (fr) 1980-02-01 1980-02-01 Photodiode a avalanche, a structure concave, son procede de fabrication, et tete de reception d'une liaison par fibres optiques utilisant une telle photodiode

Country Status (1)

Country Link
FR (1) FR2475296A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112009004341B4 (de) * 2009-01-11 2015-12-10 Ketek Gmbh Halbleiter-Geigermodus-Mikrozellenphotodioden
EP2779255B1 (en) 2013-03-15 2023-08-23 ams AG Lateral single-photon avalanche diode and their manufacturing method
CN217426769U (zh) * 2021-03-25 2022-09-13 意法半导体(克洛尔2)公司 光电二极管
FR3121282B1 (fr) 2021-03-25 2023-12-22 St Microelectronics Crolles 2 Sas Photodiode SPAD

Also Published As

Publication number Publication date
FR2475296A1 (fr) 1981-08-07

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Legal Events

Date Code Title Description
ST Notification of lapse