FR2475296A1 - Photodiode a avalanche, a structure concave, son procede de fabrication, et tete de reception d'une liaison par fibres optiques utilisant une telle photodiode - Google Patents
Photodiode a avalanche, a structure concave, son procede de fabrication, et tete de reception d'une liaison par fibres optiques utilisant une telle photodiode Download PDFInfo
- Publication number
- FR2475296A1 FR2475296A1 FR8002247A FR8002247A FR2475296A1 FR 2475296 A1 FR2475296 A1 FR 2475296A1 FR 8002247 A FR8002247 A FR 8002247A FR 8002247 A FR8002247 A FR 8002247A FR 2475296 A1 FR2475296 A1 FR 2475296A1
- Authority
- FR
- France
- Prior art keywords
- layer
- cavity
- type
- photodiode
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000835 fiber Substances 0.000 title abstract description 3
- 230000008878 coupling Effects 0.000 title description 2
- 238000010168 coupling process Methods 0.000 title description 2
- 238000005859 coupling reaction Methods 0.000 title description 2
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 238000009792 diffusion process Methods 0.000 claims abstract description 5
- 238000002513 implantation Methods 0.000 claims abstract 2
- 239000000126 substance Substances 0.000 claims abstract 2
- 239000000463 material Substances 0.000 claims description 14
- 239000012535 impurity Substances 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 8
- 239000013307 optical fiber Substances 0.000 claims description 8
- 238000001465 metallisation Methods 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 238000005468 ion implantation Methods 0.000 claims description 3
- 238000007738 vacuum evaporation Methods 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 2
- 150000002500 ions Chemical class 0.000 claims 2
- 239000013078 crystal Substances 0.000 claims 1
- 238000001704 evaporation Methods 0.000 claims 1
- 230000008020 evaporation Effects 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 2
- 238000005530 etching Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910007277 Si3 N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/40—Optical elements or arrangements
- H10F77/413—Optical elements or arrangements directly associated or integrated with the devices, e.g. back reflectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
- H10F77/147—Shapes of bodies
Landscapes
- Light Receiving Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8002247A FR2475296A1 (fr) | 1980-02-01 | 1980-02-01 | Photodiode a avalanche, a structure concave, son procede de fabrication, et tete de reception d'une liaison par fibres optiques utilisant une telle photodiode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8002247A FR2475296A1 (fr) | 1980-02-01 | 1980-02-01 | Photodiode a avalanche, a structure concave, son procede de fabrication, et tete de reception d'une liaison par fibres optiques utilisant une telle photodiode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2475296A1 true FR2475296A1 (fr) | 1981-08-07 |
| FR2475296B1 FR2475296B1 (enExample) | 1981-12-31 |
Family
ID=9238115
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR8002247A Granted FR2475296A1 (fr) | 1980-02-01 | 1980-02-01 | Photodiode a avalanche, a structure concave, son procede de fabrication, et tete de reception d'une liaison par fibres optiques utilisant une telle photodiode |
Country Status (1)
| Country | Link |
|---|---|
| FR (1) | FR2475296A1 (enExample) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2779255A1 (en) * | 2013-03-15 | 2014-09-17 | ams AG | Lateral single-photon avalanche diode and their manufacturing method |
| DE112009004341B4 (de) * | 2009-01-11 | 2015-12-10 | Ketek Gmbh | Halbleiter-Geigermodus-Mikrozellenphotodioden |
| CN115132873A (zh) * | 2021-03-25 | 2022-09-30 | 意法半导体(克洛尔2)公司 | Spad光电二极管 |
| FR3121282A1 (fr) * | 2021-03-25 | 2022-09-30 | Stmicroelectronics (Crolles 2) Sas | Photodiode SPAD |
-
1980
- 1980-02-01 FR FR8002247A patent/FR2475296A1/fr active Granted
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE112009004341B4 (de) * | 2009-01-11 | 2015-12-10 | Ketek Gmbh | Halbleiter-Geigermodus-Mikrozellenphotodioden |
| EP2779255A1 (en) * | 2013-03-15 | 2014-09-17 | ams AG | Lateral single-photon avalanche diode and their manufacturing method |
| WO2014140000A3 (en) * | 2013-03-15 | 2014-12-04 | Ams Ag | Lateral single-photon avalanche diode and their manufacturing method |
| US10374114B2 (en) | 2013-03-15 | 2019-08-06 | Ams Ag | Lateral single-photon avalanche diode and method of producing a lateral single-photon avalanche diode |
| CN115132873A (zh) * | 2021-03-25 | 2022-09-30 | 意法半导体(克洛尔2)公司 | Spad光电二极管 |
| FR3121282A1 (fr) * | 2021-03-25 | 2022-09-30 | Stmicroelectronics (Crolles 2) Sas | Photodiode SPAD |
| US12087873B2 (en) | 2021-03-25 | 2024-09-10 | Stmicroelectronics (Crolles 2) Sas | SPAD photodiode |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2475296B1 (enExample) | 1981-12-31 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |