FR2474742A1 - Dispositif de regeneration de l'etat d'une memoire a semi-conducteur - Google Patents
Dispositif de regeneration de l'etat d'une memoire a semi-conducteur Download PDFInfo
- Publication number
- FR2474742A1 FR2474742A1 FR8100045A FR8100045A FR2474742A1 FR 2474742 A1 FR2474742 A1 FR 2474742A1 FR 8100045 A FR8100045 A FR 8100045A FR 8100045 A FR8100045 A FR 8100045A FR 2474742 A1 FR2474742 A1 FR 2474742A1
- Authority
- FR
- France
- Prior art keywords
- capacitor
- terminal
- transistor
- regeneration
- mos
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 35
- 230000001172 regenerating effect Effects 0.000 title claims description 3
- 239000003990 capacitor Substances 0.000 claims abstract description 58
- 230000008929 regeneration Effects 0.000 claims abstract description 41
- 238000011069 regeneration method Methods 0.000 claims abstract description 41
- 230000015654 memory Effects 0.000 claims abstract description 29
- 230000008878 coupling Effects 0.000 claims description 16
- 238000010168 coupling process Methods 0.000 claims description 16
- 238000005859 coupling reaction Methods 0.000 claims description 16
- 238000005516 engineering process Methods 0.000 description 9
- 239000000758 substrate Substances 0.000 description 7
- 230000003071 parasitic effect Effects 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 4
- 238000006731 degradation reaction Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000000969 carrier Substances 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 230000002787 reinforcement Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000003491 array Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000005055 memory storage Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000000284 resting effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/402—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration individual to each memory cell, i.e. internal refresh
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/109,777 US4292677A (en) | 1980-01-07 | 1980-01-07 | Self-refreshed capacitor memory cell |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2474742A1 true FR2474742A1 (fr) | 1981-07-31 |
| FR2474742B1 FR2474742B1 (US20100012521A1-20100121-C00001.png) | 1984-01-27 |
Family
ID=22329511
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR8100045A Granted FR2474742A1 (fr) | 1980-01-07 | 1981-01-05 | Dispositif de regeneration de l'etat d'une memoire a semi-conducteur |
Country Status (12)
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4413329A (en) * | 1980-12-24 | 1983-11-01 | International Business Machines Corporation | Dynamic memory cell |
| DE3235835A1 (de) * | 1982-09-28 | 1984-03-29 | Siemens AG, 1000 Berlin und 8000 München | Halbleiter-speicherzelle |
| US5003361A (en) * | 1987-08-31 | 1991-03-26 | At&T Bell Laboratories | Active dynamic memory cell |
| US6560136B1 (en) | 1998-09-30 | 2003-05-06 | Infineon Technologies Ag | Single-port memory cell |
| US6768668B2 (en) * | 2001-06-12 | 2004-07-27 | Infineon Technologies Aktiengesellschaft | Converting volatile memory to non-volatile memory |
| US6686729B1 (en) | 2002-10-15 | 2004-02-03 | Texas Instruments Incorporated | DC/DC switching regulator having reduced switching loss |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2306506A1 (fr) * | 1975-04-04 | 1976-10-29 | Western Electric Co | Memoire dynamique a semi-conducteur |
| US4122550A (en) * | 1978-02-08 | 1978-10-24 | Intel Corporation | Low power random access memory with self-refreshing cells |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4203159A (en) * | 1978-10-05 | 1980-05-13 | Wanlass Frank M | Pseudostatic electronic memory |
-
1980
- 1980-01-07 US US06/109,777 patent/US4292677A/en not_active Expired - Lifetime
- 1980-12-18 CA CA000367080A patent/CA1135853A/en not_active Expired
- 1980-12-19 SE SE8009001A patent/SE8009001L/ not_active Application Discontinuation
- 1980-12-31 ES ES498280A patent/ES498280A0/es active Granted
-
1981
- 1981-01-05 FR FR8100045A patent/FR2474742A1/fr active Granted
- 1981-01-05 DD DD81226826A patent/DD156857A5/de unknown
- 1981-01-05 DE DE19813100129 patent/DE3100129A1/de not_active Withdrawn
- 1981-01-06 IT IT19020/81A patent/IT1134949B/it active
- 1981-01-06 BE BE0/203400A patent/BE886964A/fr not_active IP Right Cessation
- 1981-01-06 GB GB8100212A patent/GB2067867B/en not_active Expired
- 1981-01-06 NL NL8100020A patent/NL8100020A/nl not_active Application Discontinuation
- 1981-01-07 JP JP52681A patent/JPS56101695A/ja active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2306506A1 (fr) * | 1975-04-04 | 1976-10-29 | Western Electric Co | Memoire dynamique a semi-conducteur |
| US4122550A (en) * | 1978-02-08 | 1978-10-24 | Intel Corporation | Low power random access memory with self-refreshing cells |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2474742B1 (US20100012521A1-20100121-C00001.png) | 1984-01-27 |
| DE3100129A1 (de) | 1981-11-19 |
| CA1135853A (en) | 1982-11-16 |
| IT8119020A0 (it) | 1981-01-06 |
| JPS56101695A (en) | 1981-08-14 |
| BE886964A (fr) | 1981-05-04 |
| ES8205074A1 (es) | 1982-06-01 |
| ES498280A0 (es) | 1982-06-01 |
| GB2067867B (en) | 1983-10-26 |
| IT1134949B (it) | 1986-08-20 |
| GB2067867A (en) | 1981-07-30 |
| SE8009001L (sv) | 1981-07-08 |
| US4292677A (en) | 1981-09-29 |
| NL8100020A (nl) | 1981-08-03 |
| DD156857A5 (de) | 1982-09-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |