FR2471668A1 - Procede de diffusion de phosphore dans un semi-conducteur et procede d'obtention de phosphure de silicium - Google Patents

Procede de diffusion de phosphore dans un semi-conducteur et procede d'obtention de phosphure de silicium Download PDF

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Publication number
FR2471668A1
FR2471668A1 FR7930725A FR7930725A FR2471668A1 FR 2471668 A1 FR2471668 A1 FR 2471668A1 FR 7930725 A FR7930725 A FR 7930725A FR 7930725 A FR7930725 A FR 7930725A FR 2471668 A1 FR2471668 A1 FR 2471668A1
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FR
France
Prior art keywords
temperature
silicon
diffusion
phosphorus
sealed tube
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7930725A
Other languages
English (en)
French (fr)
Other versions
FR2471668B1 (enExample
Inventor
Jean-Claude Salbreux
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SILICIUM SEMICONDUCTEUR SSC
Original Assignee
SILICIUM SEMICONDUCTEUR SSC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SILICIUM SEMICONDUCTEUR SSC filed Critical SILICIUM SEMICONDUCTEUR SSC
Priority to FR7930725A priority Critical patent/FR2471668A1/fr
Publication of FR2471668A1 publication Critical patent/FR2471668A1/fr
Application granted granted Critical
Publication of FR2471668B1 publication Critical patent/FR2471668B1/fr
Granted legal-status Critical Current

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Classifications

    • H10P32/12—
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/16—Feed and outlet means for the gases; Modifying the flow of the gases
    • C30B31/165—Diffusion sources
    • H10P32/171—

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
FR7930725A 1979-12-14 1979-12-14 Procede de diffusion de phosphore dans un semi-conducteur et procede d'obtention de phosphure de silicium Granted FR2471668A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7930725A FR2471668A1 (fr) 1979-12-14 1979-12-14 Procede de diffusion de phosphore dans un semi-conducteur et procede d'obtention de phosphure de silicium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7930725A FR2471668A1 (fr) 1979-12-14 1979-12-14 Procede de diffusion de phosphore dans un semi-conducteur et procede d'obtention de phosphure de silicium

Publications (2)

Publication Number Publication Date
FR2471668A1 true FR2471668A1 (fr) 1981-06-19
FR2471668B1 FR2471668B1 (enExample) 1983-06-17

Family

ID=9232797

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7930725A Granted FR2471668A1 (fr) 1979-12-14 1979-12-14 Procede de diffusion de phosphore dans un semi-conducteur et procede d'obtention de phosphure de silicium

Country Status (1)

Country Link
FR (1) FR2471668A1 (enExample)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2868678A (en) * 1955-03-23 1959-01-13 Bell Telephone Labor Inc Method of forming large area pn junctions
US3473980A (en) * 1966-10-11 1969-10-21 Bell Telephone Labor Inc Significant impurity sources for solid state diffusion
FR2011964A1 (enExample) * 1968-06-21 1970-03-13 Philips Nv
DE2012459A1 (de) * 1969-04-01 1970-10-08 International Business Machines Corp., Armonk, N.Y. (V.St.A.) Verfahren zur Herstellung einer Dotierungs st of f que He

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2868678A (en) * 1955-03-23 1959-01-13 Bell Telephone Labor Inc Method of forming large area pn junctions
US3473980A (en) * 1966-10-11 1969-10-21 Bell Telephone Labor Inc Significant impurity sources for solid state diffusion
FR2011964A1 (enExample) * 1968-06-21 1970-03-13 Philips Nv
DE2012459A1 (de) * 1969-04-01 1970-10-08 International Business Machines Corp., Armonk, N.Y. (V.St.A.) Verfahren zur Herstellung einer Dotierungs st of f que He

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
CA1973 *
EXBK/66 *

Also Published As

Publication number Publication date
FR2471668B1 (enExample) 1983-06-17

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