FR2470445A1 - Dispositif de mise en parallele de transistors bipolaires de puissance en tres haute frequence et amplificateur utilisant ce dispositif - Google Patents

Dispositif de mise en parallele de transistors bipolaires de puissance en tres haute frequence et amplificateur utilisant ce dispositif Download PDF

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Publication number
FR2470445A1
FR2470445A1 FR7928692A FR7928692A FR2470445A1 FR 2470445 A1 FR2470445 A1 FR 2470445A1 FR 7928692 A FR7928692 A FR 7928692A FR 7928692 A FR7928692 A FR 7928692A FR 2470445 A1 FR2470445 A1 FR 2470445A1
Authority
FR
France
Prior art keywords
transistors
plate
terminals
electrodes
series
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7928692A
Other languages
English (en)
French (fr)
Other versions
FR2470445B1 (OSRAM
Inventor
Jean-Claude Resneau
Marius Cirio
Jean Doyen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR7928692A priority Critical patent/FR2470445A1/fr
Priority to EP80401449A priority patent/EP0030168B1/fr
Priority to DE8080401449T priority patent/DE3063167D1/de
Priority to US06/208,006 priority patent/US4408219A/en
Priority to JP16400280A priority patent/JPS5683960A/ja
Publication of FR2470445A1 publication Critical patent/FR2470445A1/fr
Application granted granted Critical
Publication of FR2470445B1 publication Critical patent/FR2470445B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
    • H01L23/057—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body the leads being parallel to the base
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D
    • H01L25/072—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6644—Packaging aspects of high-frequency amplifiers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microwave Amplifiers (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Bipolar Transistors (AREA)
FR7928692A 1979-11-21 1979-11-21 Dispositif de mise en parallele de transistors bipolaires de puissance en tres haute frequence et amplificateur utilisant ce dispositif Granted FR2470445A1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR7928692A FR2470445A1 (fr) 1979-11-21 1979-11-21 Dispositif de mise en parallele de transistors bipolaires de puissance en tres haute frequence et amplificateur utilisant ce dispositif
EP80401449A EP0030168B1 (fr) 1979-11-21 1980-10-09 Dispositif de mise en parallèle de transistors de puissance en très haute fréquence
DE8080401449T DE3063167D1 (en) 1979-11-21 1980-10-09 Device for parallel arrangement of very high frequency power transistors
US06/208,006 US4408219A (en) 1979-11-21 1980-11-18 Device for connecting in parallel power transistors in very high frequency
JP16400280A JPS5683960A (en) 1979-11-21 1980-11-20 Device for connecting power transistors in parallel for superhigh frequency

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7928692A FR2470445A1 (fr) 1979-11-21 1979-11-21 Dispositif de mise en parallele de transistors bipolaires de puissance en tres haute frequence et amplificateur utilisant ce dispositif

Publications (2)

Publication Number Publication Date
FR2470445A1 true FR2470445A1 (fr) 1981-05-29
FR2470445B1 FR2470445B1 (OSRAM) 1983-04-29

Family

ID=9231942

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7928692A Granted FR2470445A1 (fr) 1979-11-21 1979-11-21 Dispositif de mise en parallele de transistors bipolaires de puissance en tres haute frequence et amplificateur utilisant ce dispositif

Country Status (5)

Country Link
US (1) US4408219A (OSRAM)
EP (1) EP0030168B1 (OSRAM)
JP (1) JPS5683960A (OSRAM)
DE (1) DE3063167D1 (OSRAM)
FR (1) FR2470445A1 (OSRAM)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8601743A (nl) * 1985-07-05 1987-02-02 Acrian Inc Transistorpakket.
US4639760A (en) * 1986-01-21 1987-01-27 Motorola, Inc. High power RF transistor assembly
JPH088269B2 (ja) * 1986-10-22 1996-01-29 シーメンス、アクチエンゲゼルシヤフト 半導体デバイス
USRE34395E (en) * 1989-06-15 1993-10-05 Cray Research, Inc. Method of making a chip carrier with terminating resistive elements
US6297700B1 (en) * 2000-02-18 2001-10-02 Ultrarf, Inc. RF power transistor having cascaded cells with phase matching between cells
EP1596436A1 (en) * 2004-05-12 2005-11-16 Seiko Epson Corporation Electronic circuit and method for manufacturing an electronic circuit

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2069787A5 (OSRAM) * 1969-12-11 1971-09-03 Rca Corp
FR2308205A1 (fr) * 1975-04-19 1976-11-12 Semikron Gleichrichterbau Dispositif redresseur avec deux elements semiconducteurs, connexions d'entree et de sortie, et une troisieme connexion associee au conducteur de liaison des elements
DE2731211A1 (de) * 1977-07-11 1979-01-25 Semikron Gleichrichterbau Halbleiterbaueinheit

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4296456A (en) * 1980-06-02 1981-10-20 Burroughs Corporation Electronic package for high density integrated circuits

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2069787A5 (OSRAM) * 1969-12-11 1971-09-03 Rca Corp
FR2308205A1 (fr) * 1975-04-19 1976-11-12 Semikron Gleichrichterbau Dispositif redresseur avec deux elements semiconducteurs, connexions d'entree et de sortie, et une troisieme connexion associee au conducteur de liaison des elements
DE2731211A1 (de) * 1977-07-11 1979-01-25 Semikron Gleichrichterbau Halbleiterbaueinheit

Also Published As

Publication number Publication date
FR2470445B1 (OSRAM) 1983-04-29
JPS5683960A (en) 1981-07-08
EP0030168A1 (fr) 1981-06-10
DE3063167D1 (en) 1983-06-16
US4408219A (en) 1983-10-04
EP0030168B1 (fr) 1983-05-11

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