DE3063167D1 - Device for parallel arrangement of very high frequency power transistors - Google Patents

Device for parallel arrangement of very high frequency power transistors

Info

Publication number
DE3063167D1
DE3063167D1 DE8080401449T DE3063167T DE3063167D1 DE 3063167 D1 DE3063167 D1 DE 3063167D1 DE 8080401449 T DE8080401449 T DE 8080401449T DE 3063167 T DE3063167 T DE 3063167T DE 3063167 D1 DE3063167 D1 DE 3063167D1
Authority
DE
Germany
Prior art keywords
high frequency
frequency power
parallel arrangement
power transistors
transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8080401449T
Other languages
English (en)
Inventor
Jean-Claude Resneau
Marius Cirio
Jean Doyen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Application granted granted Critical
Publication of DE3063167D1 publication Critical patent/DE3063167D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
    • H01L23/057—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body the leads being parallel to the base
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6644—Packaging aspects of high-frequency amplifiers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microwave Amplifiers (AREA)
  • Bipolar Transistors (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Lead Frames For Integrated Circuits (AREA)
DE8080401449T 1979-11-21 1980-10-09 Device for parallel arrangement of very high frequency power transistors Expired DE3063167D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7928692A FR2470445A1 (fr) 1979-11-21 1979-11-21 Dispositif de mise en parallele de transistors bipolaires de puissance en tres haute frequence et amplificateur utilisant ce dispositif

Publications (1)

Publication Number Publication Date
DE3063167D1 true DE3063167D1 (en) 1983-06-16

Family

ID=9231942

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8080401449T Expired DE3063167D1 (en) 1979-11-21 1980-10-09 Device for parallel arrangement of very high frequency power transistors

Country Status (5)

Country Link
US (1) US4408219A (de)
EP (1) EP0030168B1 (de)
JP (1) JPS5683960A (de)
DE (1) DE3063167D1 (de)
FR (1) FR2470445A1 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8601743A (nl) * 1985-07-05 1987-02-02 Acrian Inc Transistorpakket.
US4639760A (en) * 1986-01-21 1987-01-27 Motorola, Inc. High power RF transistor assembly
JPH088269B2 (ja) * 1986-10-22 1996-01-29 シーメンス、アクチエンゲゼルシヤフト 半導体デバイス
USRE34395E (en) * 1989-06-15 1993-10-05 Cray Research, Inc. Method of making a chip carrier with terminating resistive elements
US6297700B1 (en) * 2000-02-18 2001-10-02 Ultrarf, Inc. RF power transistor having cascaded cells with phase matching between cells
EP1596436A1 (de) * 2004-05-12 2005-11-16 Seiko Epson Corporation elektronischer Schaltkreis und dessen Herstellung

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE760031A (fr) * 1969-12-11 1971-05-17 Rca Corp Boitier pour module de puissance hybride a semiconducteurs
DE7512573U (de) * 1975-04-19 1975-09-04 Semikron Gesellschaft Fuer Gleichri Halbleitergleichrichteranordnung
DE2731211A1 (de) * 1977-07-11 1979-01-25 Semikron Gleichrichterbau Halbleiterbaueinheit
US4296456A (en) * 1980-06-02 1981-10-20 Burroughs Corporation Electronic package for high density integrated circuits

Also Published As

Publication number Publication date
FR2470445A1 (fr) 1981-05-29
EP0030168B1 (de) 1983-05-11
EP0030168A1 (de) 1981-06-10
FR2470445B1 (de) 1983-04-29
US4408219A (en) 1983-10-04
JPS5683960A (en) 1981-07-08

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