FR2462782B1 - - Google Patents

Info

Publication number
FR2462782B1
FR2462782B1 FR7919972A FR7919972A FR2462782B1 FR 2462782 B1 FR2462782 B1 FR 2462782B1 FR 7919972 A FR7919972 A FR 7919972A FR 7919972 A FR7919972 A FR 7919972A FR 2462782 B1 FR2462782 B1 FR 2462782B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7919972A
Other languages
French (fr)
Other versions
FR2462782A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR7919972A priority Critical patent/FR2462782A1/fr
Priority to DE8080401051T priority patent/DE3066689D1/de
Priority to EP80401051A priority patent/EP0024378B1/fr
Priority to US06/173,431 priority patent/US4321420A/en
Priority to JP10583080A priority patent/JPS5624982A/ja
Priority to ES493930A priority patent/ES8200512A1/es
Publication of FR2462782A1 publication Critical patent/FR2462782A1/fr
Application granted granted Critical
Publication of FR2462782B1 publication Critical patent/FR2462782B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
FR7919972A 1979-08-03 1979-08-03 Procede de realisation d'une couche contenant du silicium et dispositif de conversion photoelectrique mettant en oeuvre ce procede Granted FR2462782A1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR7919972A FR2462782A1 (fr) 1979-08-03 1979-08-03 Procede de realisation d'une couche contenant du silicium et dispositif de conversion photoelectrique mettant en oeuvre ce procede
DE8080401051T DE3066689D1 (en) 1979-08-03 1980-07-11 Method of manufacturing a layer containig silicon with an hybrid structure between an amorphous and a polycrystalline form, and solar cell containig such a layer
EP80401051A EP0024378B1 (fr) 1979-08-03 1980-07-11 Procédé de réalisation d'une couche contenant du silicium à structure hybride entre les formes amorphe et polycristalline, et pile solaire comprenant une telle couche
US06/173,431 US4321420A (en) 1979-08-03 1980-07-29 Process for producing a layer containing silicon and photoelectric conversion device utilizing this process
JP10583080A JPS5624982A (en) 1979-08-03 1980-07-31 Method of manufacturing silicon containing layer and solar battery associated with layer produced thereby
ES493930A ES8200512A1 (es) 1979-08-03 1980-08-01 Procedimiento de realizacion de una capa que contiene sili- cio en un dispositivo electronico

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7919972A FR2462782A1 (fr) 1979-08-03 1979-08-03 Procede de realisation d'une couche contenant du silicium et dispositif de conversion photoelectrique mettant en oeuvre ce procede

Publications (2)

Publication Number Publication Date
FR2462782A1 FR2462782A1 (fr) 1981-02-13
FR2462782B1 true FR2462782B1 (OSRAM) 1983-04-15

Family

ID=9228611

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7919972A Granted FR2462782A1 (fr) 1979-08-03 1979-08-03 Procede de realisation d'une couche contenant du silicium et dispositif de conversion photoelectrique mettant en oeuvre ce procede

Country Status (6)

Country Link
US (1) US4321420A (OSRAM)
EP (1) EP0024378B1 (OSRAM)
JP (1) JPS5624982A (OSRAM)
DE (1) DE3066689D1 (OSRAM)
ES (1) ES8200512A1 (OSRAM)
FR (1) FR2462782A1 (OSRAM)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57160174A (en) * 1981-03-30 1982-10-02 Hitachi Ltd Thin film solar battery
US4490208A (en) * 1981-07-08 1984-12-25 Agency Of Industrial Science And Technology Method of producing thin films of silicon
EP0143222B1 (de) * 1983-09-30 1987-11-11 BBC Aktiengesellschaft Brown, Boveri & Cie. Glühkathode mit hohem Emissionsvermögen für eine Elektronenröhre und Verfahren zu deren Herstellung
US5151383A (en) * 1983-12-30 1992-09-29 International Business Machines Corporation Method for producing high energy electroluminescent devices
US5221643A (en) * 1989-02-21 1993-06-22 Siemens Aktiengesellschaft Method for producing polycrystalline semiconductor material by plasma-induced vapor phase deposition using activated hydrogen
US5766344A (en) * 1991-09-21 1998-06-16 Semiconductor Energy Laboratory Co., Ltd. Method for forming a semiconductor
JPH11354820A (ja) 1998-06-12 1999-12-24 Sharp Corp 光電変換素子及びその製造方法
RU2155158C1 (ru) * 1999-10-07 2000-08-27 Институт химии высокочистых веществ РАН Способ получения моноизотопного кремния si28

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4064521A (en) * 1975-07-28 1977-12-20 Rca Corporation Semiconductor device having a body of amorphous silicon
CA1078078A (en) * 1976-03-22 1980-05-20 David E. Carlson Schottky barrier semiconductor device and method of making same
FR2394173A1 (fr) * 1977-06-06 1979-01-05 Thomson Csf Procede de fabrication de dispositifs electroniques qui comportent une couche mince de silicium amorphe et dispositif electronique obtenu par un tel procede

Also Published As

Publication number Publication date
US4321420A (en) 1982-03-23
ES493930A0 (es) 1981-10-16
JPS5624982A (en) 1981-03-10
EP0024378A1 (fr) 1981-03-04
FR2462782A1 (fr) 1981-02-13
DE3066689D1 (en) 1984-03-29
ES8200512A1 (es) 1981-10-16
EP0024378B1 (fr) 1984-02-22

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Legal Events

Date Code Title Description
ST Notification of lapse