FR2453522A1 - Protection bipolaire contre les surintensites, notamment dans une ligne telephonique - Google Patents

Protection bipolaire contre les surintensites, notamment dans une ligne telephonique

Info

Publication number
FR2453522A1
FR2453522A1 FR8003949A FR8003949A FR2453522A1 FR 2453522 A1 FR2453522 A1 FR 2453522A1 FR 8003949 A FR8003949 A FR 8003949A FR 8003949 A FR8003949 A FR 8003949A FR 2453522 A1 FR2453522 A1 FR 2453522A1
Authority
FR
France
Prior art keywords
thyristor
protection against
against overcurrents
telephone line
state
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR8003949A
Other languages
English (en)
Other versions
FR2453522B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ABB Norden Holding AB
Original Assignee
ASEA AB
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASEA AB filed Critical ASEA AB
Publication of FR2453522A1 publication Critical patent/FR2453522A1/fr
Application granted granted Critical
Publication of FR2453522B1 publication Critical patent/FR2453522B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H3/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
    • H02H3/08—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess current
    • H02H3/087—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess current for dc applications
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout
    • H01L27/0694—Integrated circuits having a three-dimensional layout comprising components formed on opposite sides of a semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/102—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components
    • H01L27/1027—Thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

Une protection bipolaire contre les surintensités est prévue dans une ligne parcourue par le courant Elle contient un thyristor TH normalement à l'état passant, avec des organes RH1 pour l'allumage de ce thyristor en cas de faible tension de blocage. Le thyristor est muni d'un organe FH pour l'éteindre en court-circuitant l'une de ses jonctions injectrices. Des organes détecteurs de tension DH1 -DH3 scrutent la chute de tension à l'état passant aux bornes du thyristor et agissent sur l'organe court-circuiteur FH en vue de l'extinction du thyristor lorsque la chute de tension à l'état passant atteint un niveau prédéterminé. La protection contre les surintensités est réalisée dans une seule pastille de semi-conducteur.
FR8003949A 1979-04-03 1980-02-22 Protection bipolaire contre les surintensites, notamment dans une ligne telephonique Granted FR2453522A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE7902932A SE430450B (sv) 1979-04-03 1979-04-03 Tvapoligt overstromsskydd for inkoppling i en stromforande ledning

Publications (2)

Publication Number Publication Date
FR2453522A1 true FR2453522A1 (fr) 1980-10-31
FR2453522B1 FR2453522B1 (fr) 1985-04-19

Family

ID=20337711

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8003949A Granted FR2453522A1 (fr) 1979-04-03 1980-02-22 Protection bipolaire contre les surintensites, notamment dans une ligne telephonique

Country Status (11)

Country Link
US (1) US4331884A (fr)
JP (1) JPS55133618A (fr)
AU (1) AU534375B2 (fr)
BR (1) BR8002016A (fr)
DE (1) DE3011557C2 (fr)
FR (1) FR2453522A1 (fr)
GB (1) GB2049316B (fr)
IT (1) IT1130104B (fr)
MX (1) MX148526A (fr)
NL (1) NL8001719A (fr)
SE (1) SE430450B (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0204723A1 (fr) * 1984-10-24 1986-12-17 Om Ahuja Coupe-circuit avec reinitialisation automatique.
EP0600810A1 (fr) * 1992-12-04 1994-06-08 STMicroelectronics S.A. Dispositif de protection contre des surtensions
EP0655784A1 (fr) * 1993-11-29 1995-05-31 STMicroelectronics S.A. Composant de protection triangle

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2945380A1 (de) * 1979-11-09 1981-05-21 Siemens AG, 1000 Berlin und 8000 München Triac mit einem mehrschichten-halbleiterkoerper
DE2945366A1 (de) * 1979-11-09 1981-05-14 Siemens AG, 1000 Berlin und 8000 München Thyristor mit steuerbaren emitter-kurzschluessen
DE2945347A1 (de) * 1979-11-09 1981-05-21 Siemens AG, 1000 Berlin und 8000 München Thyristor mit hilfsemitterelektrode und verfahren zu seinem betrieb
DE3019883A1 (de) * 1980-05-23 1981-12-03 Siemens AG, 1000 Berlin und 8000 München Zweirichtungsthyristor
US4414560A (en) * 1980-11-17 1983-11-08 International Rectifier Corporation Floating guard region and process of manufacture for semiconductor reverse conducting switching device using spaced MOS transistors having a common drain region
US4595941A (en) * 1980-12-03 1986-06-17 Rca Corporation Protection circuit for integrated circuit devices
EP0065346A3 (fr) * 1981-05-20 1983-08-31 Reliance Electric Company Dispositif de commutation à semi-conducteur
US4797720A (en) * 1981-07-29 1989-01-10 American Telephone And Telegraph Company, At&T Bell Laboratories Controlled breakover bidirectional semiconductor switch
DE3369431D1 (en) * 1982-02-09 1987-02-26 Western Electric Co Field-effect controlled bi-directional lateral thyristor
US4742380A (en) * 1982-02-09 1988-05-03 American Telephone And Telegraph Company, At&T Bell Laboratories Switch utilizing solid-state relay
SE431381B (sv) * 1982-06-03 1984-01-30 Asea Ab Tvapoligt overstromsskydd
GB2130028B (en) * 1982-11-16 1986-10-29 Barry Wayne Williams Integrated semiconductor device
SE435436B (sv) * 1983-02-16 1984-09-24 Asea Ab Tvapoligt overstromsskydd
US4630162A (en) * 1984-07-31 1986-12-16 Texas Instruments Incorporated ESD input protection circuit
JPS624368A (ja) * 1985-06-28 1987-01-10 シ−メンス、アクチエンゲゼルシヤフト サイリスタ
US5436786A (en) * 1992-12-21 1995-07-25 Dairyland Electrical Industries, Inc. Isolator surge protector for DC isolation and AC grounding of cathodically protected systems
CA2183176C (fr) * 1995-08-18 2000-10-24 Brian R. Pelly Dispositif de blocage de courant continu grande puissance pour la mise a la terre de courant alternatif et de defaut
US5856904A (en) * 1996-11-15 1999-01-05 Dairyland Electrical Industries, Inc. Voltage and current based control and triggering for isolator surge protector
JP4256544B2 (ja) 1998-08-25 2009-04-22 シャープ株式会社 半導体集積回路の静電気保護装置、その製造方法および静電気保護装置を用いた静電気保護回路
GB0520909D0 (en) * 2005-10-14 2005-11-23 Eco Semiconductors Ltd Power semiconductor devices
USD771036S1 (en) 2014-08-11 2016-11-08 Apple Inc. Wearable device
USD727198S1 (en) 2014-08-11 2015-04-21 Apple Inc. Band
USD759725S1 (en) 2014-09-08 2016-06-21 Apple Inc. Wearable device
USD755299S1 (en) 2014-09-05 2016-05-03 Apple Inc. Label
US9478608B2 (en) * 2014-11-18 2016-10-25 Analog Devices, Inc. Apparatus and methods for transceiver interface overvoltage clamping
US10068894B2 (en) 2015-01-12 2018-09-04 Analog Devices, Inc. Low leakage bidirectional clamps and methods of forming the same
US9673187B2 (en) 2015-04-07 2017-06-06 Analog Devices, Inc. High speed interface protection apparatus
USD777163S1 (en) 2016-03-07 2017-01-24 Apple Inc. Wearable device
USD789822S1 (en) 2016-03-07 2017-06-20 Apple Inc. Band
USD781853S1 (en) 2016-03-07 2017-03-21 Apple Inc. Wearable device
USD795121S1 (en) 2016-03-07 2017-08-22 Apple Inc. Band
US9831233B2 (en) 2016-04-29 2017-11-28 Analog Devices Global Apparatuses for communication systems transceiver interfaces
US10734806B2 (en) 2016-07-21 2020-08-04 Analog Devices, Inc. High voltage clamps with transient activation and activation release control
USD838619S1 (en) 2017-03-10 2019-01-22 Apple Inc. Band
US10249609B2 (en) 2017-08-10 2019-04-02 Analog Devices, Inc. Apparatuses for communication systems transceiver interfaces
US10700056B2 (en) 2018-09-07 2020-06-30 Analog Devices, Inc. Apparatus for automotive and communication systems transceiver interfaces
US11387648B2 (en) 2019-01-10 2022-07-12 Analog Devices International Unlimited Company Electrical overstress protection with low leakage current for high voltage tolerant high speed interfaces

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1357095A (fr) * 1962-02-23 1964-04-03 Ass Elect Ind Appareil interrupteur de sécurité
US3369154A (en) * 1965-08-03 1968-02-13 William H. Swain Overload protector for electrical current supply including a solid state breaker with improved sequencing logic combined with or without a combined electromechanical breaker
FR2008826A1 (fr) * 1968-05-18 1970-01-23 Philips Nv

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3263128A (en) * 1962-07-23 1966-07-26 Richard L White Circuit breaker
DE2112598B2 (de) * 1971-03-16 1973-08-30 Ueberlast- und kurzschlusschutzanordnung
DE2120233A1 (de) * 1971-04-24 1972-11-02 Tekade Feiten & Guilleaume, Fern meldeanlagen GmbH, 8500 Nürnberg Schaltungsanordnung fur einen elek tromschen Uberstromschalter
SE392783B (sv) * 1975-06-19 1977-04-18 Asea Ab Halvledaranordning innefattande en tyristor och en felteffekttransistordel
JPS5847724B2 (ja) * 1975-10-16 1983-10-24 ソニー株式会社 デンゲンカイロ
JPS5574168A (en) * 1978-11-28 1980-06-04 Oki Electric Ind Co Ltd Pnpn switch

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1357095A (fr) * 1962-02-23 1964-04-03 Ass Elect Ind Appareil interrupteur de sécurité
US3369154A (en) * 1965-08-03 1968-02-13 William H. Swain Overload protector for electrical current supply including a solid state breaker with improved sequencing logic combined with or without a combined electromechanical breaker
FR2008826A1 (fr) * 1968-05-18 1970-01-23 Philips Nv

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0204723A1 (fr) * 1984-10-24 1986-12-17 Om Ahuja Coupe-circuit avec reinitialisation automatique.
EP0204723A4 (fr) * 1984-10-24 1987-09-21 Om Ahuja Coupe-circuit avec reinitialisation automatique.
EP0600810A1 (fr) * 1992-12-04 1994-06-08 STMicroelectronics S.A. Dispositif de protection contre des surtensions
FR2699015A1 (fr) * 1992-12-04 1994-06-10 Sgs Thomson Microelectronics Dispositif de protection contre des surtensions.
US6252256B1 (en) 1992-12-04 2001-06-26 Stmicroelectronics, Inc. Overvoltage protection circuit
EP0655784A1 (fr) * 1993-11-29 1995-05-31 STMicroelectronics S.A. Composant de protection triangle
FR2713400A1 (fr) * 1993-11-29 1995-06-09 Sgs Thomson Microelectronics Composant de protection triangle.

Also Published As

Publication number Publication date
BR8002016A (pt) 1980-11-25
IT1130104B (it) 1986-06-11
IT8067506A0 (it) 1980-04-02
US4331884A (en) 1982-05-25
SE7902932L (sv) 1980-10-04
DE3011557A1 (de) 1980-10-16
FR2453522B1 (fr) 1985-04-19
AU5700080A (en) 1980-10-09
NL8001719A (nl) 1980-10-07
DE3011557C2 (de) 1985-02-14
AU534375B2 (en) 1984-01-26
MX148526A (es) 1983-04-29
JPS55133618A (en) 1980-10-17
GB2049316B (en) 1983-05-25
GB2049316A (en) 1980-12-17
SE430450B (sv) 1983-11-14

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Legal Events

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ST Notification of lapse