GB2130028B - Integrated semiconductor device - Google Patents

Integrated semiconductor device

Info

Publication number
GB2130028B
GB2130028B GB08232703A GB8232703A GB2130028B GB 2130028 B GB2130028 B GB 2130028B GB 08232703 A GB08232703 A GB 08232703A GB 8232703 A GB8232703 A GB 8232703A GB 2130028 B GB2130028 B GB 2130028B
Authority
GB
United Kingdom
Prior art keywords
semiconductor device
integrated semiconductor
integrated
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB08232703A
Other versions
GB2130028A (en
Inventor
Barry Wayne Williams
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to GB08232703A priority Critical patent/GB2130028B/en
Priority to DE19833340012 priority patent/DE3340012A1/en
Priority to JP21586283A priority patent/JPS59155168A/en
Publication of GB2130028A publication Critical patent/GB2130028A/en
Application granted granted Critical
Publication of GB2130028B publication Critical patent/GB2130028B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
GB08232703A 1982-11-16 1982-11-16 Integrated semiconductor device Expired GB2130028B (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
GB08232703A GB2130028B (en) 1982-11-16 1982-11-16 Integrated semiconductor device
DE19833340012 DE3340012A1 (en) 1982-11-16 1983-11-04 SWITCH TYRISTORS
JP21586283A JPS59155168A (en) 1982-11-16 1983-11-16 Gate turn off device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB08232703A GB2130028B (en) 1982-11-16 1982-11-16 Integrated semiconductor device

Publications (2)

Publication Number Publication Date
GB2130028A GB2130028A (en) 1984-05-23
GB2130028B true GB2130028B (en) 1986-10-29

Family

ID=10534300

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08232703A Expired GB2130028B (en) 1982-11-16 1982-11-16 Integrated semiconductor device

Country Status (3)

Country Link
JP (1) JPS59155168A (en)
DE (1) DE3340012A1 (en)
GB (1) GB2130028B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0226021A1 (en) * 1985-12-12 1987-06-24 BBC Brown Boveri AG Thyristor with switchable emitter shorting
US5086242A (en) * 1990-10-16 1992-02-04 Harris Corporation Fast turn-off of thyristor structure
DE4431294A1 (en) * 1994-09-02 1996-03-07 Abb Management Ag Switchable thyristor for high blocking voltages and small component thickness

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4213066A (en) * 1978-08-11 1980-07-15 General Motors Corporation Solid state switch
SE430450B (en) * 1979-04-03 1983-11-14 Asea Ab TWO-POLE OVERCURRENT PROTECTION FOR CONNECTION IN A POWER-CARRYING WIRE
EP0060912B1 (en) * 1981-03-24 1986-10-22 Siemens Aktiengesellschaft Thyristor having a disconnectible emitter short

Also Published As

Publication number Publication date
DE3340012A1 (en) 1984-05-17
JPS59155168A (en) 1984-09-04
GB2130028A (en) 1984-05-23

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee