FR2448586B1 - - Google Patents

Info

Publication number
FR2448586B1
FR2448586B1 FR8002951A FR8002951A FR2448586B1 FR 2448586 B1 FR2448586 B1 FR 2448586B1 FR 8002951 A FR8002951 A FR 8002951A FR 8002951 A FR8002951 A FR 8002951A FR 2448586 B1 FR2448586 B1 FR 2448586B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8002951A
Other languages
French (fr)
Other versions
FR2448586A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Schott Solar CSP Inc
Original Assignee
Mobil Tyco Solar Energy Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mobil Tyco Solar Energy Corp filed Critical Mobil Tyco Solar Energy Corp
Publication of FR2448586A1 publication Critical patent/FR2448586A1/fr
Application granted granted Critical
Publication of FR2448586B1 publication Critical patent/FR2448586B1/fr
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1036—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]
    • Y10T117/1044—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die] including means forming a flat shape [e.g., ribbon]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Photovoltaic Devices (AREA)
  • Silicon Compounds (AREA)
FR8002951A 1979-02-12 1980-02-11 Filiere capillaire decalee et procede pour faire croitre des cristaux a partir d'une masse fondue, et procede de fabrication de cellules solaires Granted FR2448586A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/011,527 US4430305A (en) 1979-02-12 1979-02-12 Displaced capillary dies

Publications (2)

Publication Number Publication Date
FR2448586A1 FR2448586A1 (fr) 1980-09-05
FR2448586B1 true FR2448586B1 (en:Method) 1984-12-07

Family

ID=21750772

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8002951A Granted FR2448586A1 (fr) 1979-02-12 1980-02-11 Filiere capillaire decalee et procede pour faire croitre des cristaux a partir d'une masse fondue, et procede de fabrication de cellules solaires

Country Status (10)

Country Link
US (1) US4430305A (en:Method)
JP (1) JPS55109295A (en:Method)
AU (1) AU530159B2 (en:Method)
CA (1) CA1142418A (en:Method)
DE (1) DE3005049A1 (en:Method)
FR (1) FR2448586A1 (en:Method)
GB (1) GB2041781B (en:Method)
IL (1) IL59275A (en:Method)
IN (1) IN153781B (en:Method)
NL (1) NL8000851A (en:Method)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IN158092B (en:Method) * 1981-01-12 1986-08-30 Mobil Solar Energy Corp
US4330359A (en) * 1981-02-10 1982-05-18 Lovelace Alan M Administrator Electromigration process for the purification of molten silicon during crystal growth
US4469552A (en) * 1982-04-23 1984-09-04 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Process and apparatus for growing a crystal ribbon
DE3231267A1 (de) * 1982-08-23 1984-02-23 Siemens AG, 1000 Berlin und 8000 München Verfahren und vorrichtung zum asymmetrischen beschichten eines bandfoermigen traegerkoerpers mit silizium fuer die weiterverarbeitung zu solarzellen
DE3231268A1 (de) * 1982-08-23 1984-02-23 Siemens AG, 1000 Berlin und 8000 München Verfahren und vorrichtung zum asymmetrischen beschichten eines bandfoermigen traegerkoerpers mit silizium fuer die weiterverarbeitung zu solarzellen
DE3231326A1 (de) * 1982-08-23 1984-02-23 Siemens AG, 1000 Berlin und 8000 München Vorrichtung zum herstellen von grossflaechigen, bandfoermigen siliziumkoerpern fuer solarzellen
FR2769639B1 (fr) * 1997-10-10 1999-11-12 Commissariat Energie Atomique Filiere pour le tirage de cristaux a partir d'un bain fondu
CN102002754B (zh) * 2010-12-28 2012-07-04 上海应用技术学院 硅酸铋闪烁晶体的定形提拉生长方法
WO2012125898A1 (en) * 2011-03-17 2012-09-20 Georgia Tech Research Corporation Patterned graphene structures on silicon carbide
CN102560630A (zh) * 2012-01-12 2012-07-11 徐州协鑫光电科技有限公司 导模法同步生长多条晶体的热场及方法
TWI479055B (zh) * 2012-09-30 2015-04-01 Saint Gobain Ceramics 用於晶體生長之模具、裝置及方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS535994B2 (en:Method) 1974-09-26 1978-03-03
US4036666A (en) * 1975-12-05 1977-07-19 Mobil Tyco Solar Energy Corporation Manufacture of semiconductor ribbon
US4116641A (en) 1976-04-16 1978-09-26 International Business Machines Corporation Apparatus for pulling crystal ribbons from a truncated wedge shaped die
JPS5342559A (en) * 1976-09-29 1978-04-18 Nec Corp Production of semiconductor elements
FR2376697A2 (fr) 1977-01-11 1978-08-04 Ugine Kuhlmann Dispositif de fabrication en continu de monocristaux preformes en forme de plaques
US4099924A (en) 1977-03-16 1978-07-11 Rca Corporation Apparatus improvements for growing single crystalline silicon sheets

Also Published As

Publication number Publication date
DE3005049C2 (en:Method) 1990-01-18
NL8000851A (nl) 1980-08-14
US4430305A (en) 1984-02-07
GB2041781B (en) 1982-10-27
IN153781B (en:Method) 1984-08-18
AU5508380A (en) 1980-08-21
CA1142418A (en) 1983-03-08
IL59275A (en) 1983-03-31
GB2041781A (en) 1980-09-17
JPS55109295A (en) 1980-08-22
AU530159B2 (en) 1983-07-07
FR2448586A1 (fr) 1980-09-05
DE3005049A1 (de) 1980-08-21

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Legal Events

Date Code Title Description
CD Change of name or company name
ST Notification of lapse