FR2447609A1 - Procede d'encapsulation d'une diode utilisable en tres haute frequence, et structure semiconductrice ainsi obtenue - Google Patents

Procede d'encapsulation d'une diode utilisable en tres haute frequence, et structure semiconductrice ainsi obtenue

Info

Publication number
FR2447609A1
FR2447609A1 FR7902099A FR7902099A FR2447609A1 FR 2447609 A1 FR2447609 A1 FR 2447609A1 FR 7902099 A FR7902099 A FR 7902099A FR 7902099 A FR7902099 A FR 7902099A FR 2447609 A1 FR2447609 A1 FR 2447609A1
Authority
FR
France
Prior art keywords
ring
diode
encapsulating
fiber
high frequency
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7902099A
Other languages
English (en)
French (fr)
Other versions
FR2447609B1 (enExample
Inventor
Raymond Henry
Jacques Simon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR7902099A priority Critical patent/FR2447609A1/fr
Publication of FR2447609A1 publication Critical patent/FR2447609A1/fr
Application granted granted Critical
Publication of FR2447609B1 publication Critical patent/FR2447609B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H10W72/00—
    • H10W44/20—

Landscapes

  • Waveguide Connection Structure (AREA)
FR7902099A 1979-01-26 1979-01-26 Procede d'encapsulation d'une diode utilisable en tres haute frequence, et structure semiconductrice ainsi obtenue Granted FR2447609A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7902099A FR2447609A1 (fr) 1979-01-26 1979-01-26 Procede d'encapsulation d'une diode utilisable en tres haute frequence, et structure semiconductrice ainsi obtenue

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7902099A FR2447609A1 (fr) 1979-01-26 1979-01-26 Procede d'encapsulation d'une diode utilisable en tres haute frequence, et structure semiconductrice ainsi obtenue

Publications (2)

Publication Number Publication Date
FR2447609A1 true FR2447609A1 (fr) 1980-08-22
FR2447609B1 FR2447609B1 (enExample) 1982-05-14

Family

ID=9221266

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7902099A Granted FR2447609A1 (fr) 1979-01-26 1979-01-26 Procede d'encapsulation d'une diode utilisable en tres haute frequence, et structure semiconductrice ainsi obtenue

Country Status (1)

Country Link
FR (1) FR2447609A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0046107A1 (fr) * 1980-08-08 1982-02-17 Thomson-Csf Dispositif semiconducteur utilisable en très haute fréquence, et son procédé de fabrication

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2277459A1 (fr) * 1974-07-05 1976-01-30 Mitsubishi Electric Corp Semi-conducteur haute frequence

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2277459A1 (fr) * 1974-07-05 1976-01-30 Mitsubishi Electric Corp Semi-conducteur haute frequence

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0046107A1 (fr) * 1980-08-08 1982-02-17 Thomson-Csf Dispositif semiconducteur utilisable en très haute fréquence, et son procédé de fabrication

Also Published As

Publication number Publication date
FR2447609B1 (enExample) 1982-05-14

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