FR2437674A1 - SEMICONDUCTOR MEMORY HAVING DEPLETION VARACTORS AS MEMORY CAPACITORS - Google Patents

SEMICONDUCTOR MEMORY HAVING DEPLETION VARACTORS AS MEMORY CAPACITORS

Info

Publication number
FR2437674A1
FR2437674A1 FR7922767A FR7922767A FR2437674A1 FR 2437674 A1 FR2437674 A1 FR 2437674A1 FR 7922767 A FR7922767 A FR 7922767A FR 7922767 A FR7922767 A FR 7922767A FR 2437674 A1 FR2437674 A1 FR 2437674A1
Authority
FR
France
Prior art keywords
memory
depletion
varactors
capacitors
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7922767A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of FR2437674A1 publication Critical patent/FR2437674A1/en
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/35—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices with charge storage in a depletion layer, e.g. charge coupled devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Dram (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

L'INVENTION CONCERNE UNE MEMOIRE A SEMI-CONDUCTEURS COMPORTANT DES VARACTORS A APPAUVRISSEMENT SERVANT DE CONDENSATEURS DE MEMOIRE. DANS CETTE MEMOIRE COMPORTANT DES CELLULES DE MEMOIRE FORMEES D'UN TRANSISTOR DE SELECTION AT ET D'UN CONDENSATEUR DE MEMOIRE CS REALISES SUR UN SUBSTRAT SEMI-CONDUCTEUR SU AVEC DES ELECTRODES COMMANDEES SE1, SE2, UNE ELECTRODE DE COMMANDE G, UNE COUCHE D'INVERSION IV ET DES COUCHES ISOLANTES IS, LE CONDENSATEUR DE MEMOIRE EST CONSTITUE SOUS LA FORME D'UN VARACTOR MOS A APPAUVRISSEMENT. APPLICATION NOTAMMENT AUX MEMOIRES A SEMI-CONDUCTEURS MOS.THE INVENTION RELATES TO A SEMICONDUCTOR MEMORY CONTAINING DEPLETION VARACTORS SERVING AS MEMORY CAPACITORS. IN THIS MEMORY CONTAINING MEMORY CELLS FORMED BY A SELECTION TRANSISTOR AT AND A MEMORY CAPACITOR CS MADE ON A SEMICONDUCTOR SUBSTRATE SU WITH CONTROLLED ELECTRODES SE1, SE2, A CONTROL ELECTRODE G, A LAYER OF ' INVERSION IV AND IS INSULATING LAYERS, THE MEMORY CAPACITOR IS CONSTITUTED IN THE FORM OF A DEPLETION MOS VARACTOR. APPLICATION IN PARTICULAR TO MOS SEMICONDUCTOR MEMORIES.

FR7922767A 1978-09-29 1979-09-12 SEMICONDUCTOR MEMORY HAVING DEPLETION VARACTORS AS MEMORY CAPACITORS Withdrawn FR2437674A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19782842545 DE2842545C2 (en) 1978-09-29 1978-09-29 Semiconductor memory with depletion varactors as storage capacitors

Publications (1)

Publication Number Publication Date
FR2437674A1 true FR2437674A1 (en) 1980-04-25

Family

ID=6050910

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7922767A Withdrawn FR2437674A1 (en) 1978-09-29 1979-09-12 SEMICONDUCTOR MEMORY HAVING DEPLETION VARACTORS AS MEMORY CAPACITORS

Country Status (4)

Country Link
JP (1) JPS5546597A (en)
DE (1) DE2842545C2 (en)
FR (1) FR2437674A1 (en)
GB (1) GB2030768B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4375085A (en) * 1981-01-02 1983-02-22 International Business Machines Corporation Dense electrically alterable read only memory
JP2004311858A (en) * 2003-04-10 2004-11-04 Nec Electronics Corp Semiconductor integrated circuit device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2340622A1 (en) * 1976-02-09 1977-09-02 Ibm Silicon gate FET mfr. - proceeds through preliminary formation of capacitor to five lithographic masking stages
DE2741152A1 (en) * 1976-09-13 1978-03-16 Texas Instruments Inc MEMORY CELL FOR A SILICON GATE-N-CHANNEL MOS DIRECT ACCESS MEMORY AND METHOD FOR MANUFACTURING IT

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2340622A1 (en) * 1976-02-09 1977-09-02 Ibm Silicon gate FET mfr. - proceeds through preliminary formation of capacitor to five lithographic masking stages
DE2741152A1 (en) * 1976-09-13 1978-03-16 Texas Instruments Inc MEMORY CELL FOR A SILICON GATE-N-CHANNEL MOS DIRECT ACCESS MEMORY AND METHOD FOR MANUFACTURING IT
FR2364541A1 (en) * 1976-09-13 1978-04-07 Texas Instruments Inc DIRECT ACCESS MEMORY CELL WITH A CONDENSER REGION IMPLANTED, AND ITS OBTAINING PROCEDURE

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
EXBK/76 *

Also Published As

Publication number Publication date
DE2842545B1 (en) 1979-11-15
DE2842545C2 (en) 1980-07-31
GB2030768A (en) 1980-04-10
GB2030768B (en) 1983-03-23
JPS5546597A (en) 1980-04-01

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Legal Events

Date Code Title Description
ST Notification of lapse