FR2436625A1 - VACUUM CONTAINER AND OTHER VACUUM EQUIPMENT PARTS - Google Patents
VACUUM CONTAINER AND OTHER VACUUM EQUIPMENT PARTSInfo
- Publication number
- FR2436625A1 FR2436625A1 FR7901177A FR7901177A FR2436625A1 FR 2436625 A1 FR2436625 A1 FR 2436625A1 FR 7901177 A FR7901177 A FR 7901177A FR 7901177 A FR7901177 A FR 7901177A FR 2436625 A1 FR2436625 A1 FR 2436625A1
- Authority
- FR
- France
- Prior art keywords
- vacuum
- equipment parts
- container
- vacuum equipment
- vacuum container
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/02—Apparatus characterised by being constructed of material selected for its chemically-resistant properties
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
- B01J3/006—Processes utilising sub-atmospheric pressure; Apparatus therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/02—Apparatus characterised by their chemically-resistant properties
- B01J2219/0204—Apparatus characterised by their chemically-resistant properties comprising coatings on the surfaces in direct contact with the reactive components
- B01J2219/0236—Metal based
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Physical Vapour Deposition (AREA)
- Flanged Joints, Insulating Joints, And Other Joints (AREA)
Abstract
In order to reduce outgassing from the surfaces of vacuum equipment and instruments, the surface is coated with a metal nitride. This is effected by means of a reactive vapour-deposition process. When, for example, tantalum nitride was employed, it was found that the outgassing amount, for example in the case of H2O, is up to 60% less.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP53115863A JPS5832229B2 (en) | 1978-09-22 | 1978-09-22 | Vacuum containers and vacuum equipment parts coated with metal nitride |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2436625A1 true FR2436625A1 (en) | 1980-04-18 |
FR2436625B1 FR2436625B1 (en) | 1983-07-29 |
Family
ID=14673005
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7901177A Granted FR2436625A1 (en) | 1978-09-22 | 1979-01-10 | VACUUM CONTAINER AND OTHER VACUUM EQUIPMENT PARTS |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPS5832229B2 (en) |
CH (1) | CH646072A5 (en) |
DE (1) | DE2900057C3 (en) |
FR (1) | FR2436625A1 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2472035A1 (en) * | 1979-12-13 | 1981-06-26 | Toyo Engineering Corp | PROCESS FOR HIGH TEMPERATURE TREATMENT OF HYDROCARBON CONTAINING MATERIALS TO AVOID CARBON DEPOSITS ON REACTOR SURFACE |
EP1033745A2 (en) * | 1999-03-02 | 2000-09-06 | Motorola, Inc. | Method for forming a barrier layer for use in a copper interconnect |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6055877U (en) * | 1983-09-26 | 1985-04-19 | 株式会社タニタ | fire starter crater |
US5478524A (en) * | 1992-08-24 | 1995-12-26 | Nissan Motor Co., Ltd. | Super high vacuum vessel |
JP4829485B2 (en) * | 2003-06-10 | 2011-12-07 | 有限会社真空実験室 | Vacuum component material, vacuum component, vacuum device, vacuum component material manufacturing method, vacuum component processing method, and vacuum device processing method |
US11015244B2 (en) * | 2013-12-30 | 2021-05-25 | Advanced Material Solutions, Llc | Radiation shielding for a CVD reactor |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1405264A (en) * | 1964-05-12 | 1965-07-09 | Commissariat Energie Atomique | Manufacturing process of vacuum chambers |
FR2022248A1 (en) * | 1968-10-09 | 1970-07-31 | Gen Electric | |
US3537891A (en) * | 1967-09-25 | 1970-11-03 | Gen Electric | Resistor films of transition metal nitrides and method of forming |
FR2211347A1 (en) * | 1972-12-26 | 1974-07-19 | Varian Associates |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE7120919U (en) * | 1971-08-26 | Rhone Poulenc Sa | Laboratory autoclave made of glazed steel | |
JPS4834912A (en) * | 1971-09-09 | 1973-05-23 | ||
JPS5210867A (en) * | 1975-07-15 | 1977-01-27 | Matsushita Electric Ind Co Ltd | Apparatus for forming films in vacuum |
-
1978
- 1978-09-22 JP JP53115863A patent/JPS5832229B2/en not_active Expired
-
1979
- 1979-01-02 DE DE19792900057 patent/DE2900057C3/en not_active Expired
- 1979-01-09 CH CH19579A patent/CH646072A5/en not_active IP Right Cessation
- 1979-01-10 FR FR7901177A patent/FR2436625A1/en active Granted
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1405264A (en) * | 1964-05-12 | 1965-07-09 | Commissariat Energie Atomique | Manufacturing process of vacuum chambers |
US3537891A (en) * | 1967-09-25 | 1970-11-03 | Gen Electric | Resistor films of transition metal nitrides and method of forming |
FR2022248A1 (en) * | 1968-10-09 | 1970-07-31 | Gen Electric | |
FR2211347A1 (en) * | 1972-12-26 | 1974-07-19 | Varian Associates |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2472035A1 (en) * | 1979-12-13 | 1981-06-26 | Toyo Engineering Corp | PROCESS FOR HIGH TEMPERATURE TREATMENT OF HYDROCARBON CONTAINING MATERIALS TO AVOID CARBON DEPOSITS ON REACTOR SURFACE |
EP1033745A2 (en) * | 1999-03-02 | 2000-09-06 | Motorola, Inc. | Method for forming a barrier layer for use in a copper interconnect |
EP1033745A3 (en) * | 1999-03-02 | 2001-12-19 | Motorola, Inc. | Method for forming a barrier layer for use in a copper interconnect |
US6451181B1 (en) | 1999-03-02 | 2002-09-17 | Motorola, Inc. | Method of forming a semiconductor device barrier layer |
Also Published As
Publication number | Publication date |
---|---|
DE2900057C3 (en) | 1981-10-08 |
DE2900057A1 (en) | 1980-03-27 |
JPS5544509A (en) | 1980-03-28 |
JPS5832229B2 (en) | 1983-07-12 |
FR2436625B1 (en) | 1983-07-29 |
DE2900057B2 (en) | 1980-11-27 |
CH646072A5 (en) | 1984-11-15 |
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